{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/87951"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/87951","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Growth of titanium-nitride thin films for low-loss superconducting quantum circuits","abstract":"This is a study of the growth of titanium-nitride (TiN) by plasma assisted molecular beam epitaxy (MBE) for applications in low loss quantum circuits. Titanium nitride is a material known to have low loss at microwave frequencies which sees practical use in many emerging quantum device architectures. The goal of this research is to investigate improvements in TiN thin films utilizing MBE to produce highly pure, highly crystalline films. A review of the theory of superconducting qubits is given and recent developments in superconducting qubit research are summarized to elucidate how loss has been reduced historically and the importance of materials improvements to the future of scalable quantum computation. The dynamics of epitaxial film growth are discussed, focusing on the formation of a minimum energy surface, the thermally driven kinetics of atoms deposited on the surface, and how these lead to the formation of large scale crystalline domains in the film. An overview of the MBE growth chamber is given and the growth procedure for TiN is discussed. Transport and morphology measurement results are discussed for MBE TiN where, for optimized growth conditions, films are highly crystalline with superconducting transition temperatures(Tc) as high as Tc = 6.1K, matching the value for bulk crystals and exceeding all reported thin film values. Microwave loss measurements of transmission line resonators fabricated from these films are shown to have low-power quality factors(Q) as high as 200,000 and an increase to Q = 400,000 at high power, consistent with the saturation of two-level-systems (TLS) at high power. These results confirm a connection between the high quality crystalline materials produced in this work and low loss in quantum circuits.","abstract_html":"This is a study of the growth of titanium-nitride (TiN) by plasma assisted molecular beam epitaxy (MBE) for applications in low loss quantum circuits. Titanium nitride is a material known to have low loss at microwave frequencies which sees practical use in many emerging quantum device architectures. The goal of this research is to investigate improvements in TiN thin films utilizing MBE to produce highly pure, highly crystalline films. A review of the theory of superconducting qubits is given and recent developments in superconducting qubit research are summarized to elucidate how loss has been reduced historically and the importance of materials improvements to the future of scalable quantum computation. The dynamics of epitaxial film growth are discussed, focusing on the formation of a minimum energy surface, the thermally driven kinetics of atoms deposited on the surface, and how these lead to the formation of large scale crystalline domains in the film. An overview of the MBE growth chamber is given and the growth procedure for TiN is discussed. Transport and morphology measurement results are discussed for MBE TiN where, for optimized growth conditions, films are highly crystalline with superconducting transition temperatures(Tc) as high as Tc = 6.1K, matching the value for bulk crystals and exceeding all reported thin film values. Microwave loss measurements of transmission line resonators fabricated from these films are shown to have low-power quality factors(Q) as high as 200,000 and an increase to Q = 400,000 at high power, consistent with the saturation of two-level-systems (TLS) at high power. These results confirm a connection between the high quality crystalline materials produced in this work and low loss in quantum circuits.","abstract_has_math":false,"creators":["Olson, Gustaf Anders"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Eckstein, James N.","Bezryadin, Alexey","Clark, Bryan K","Vieira, Joaquin"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-29T20:37:35Z","date_published":"2015-09-29T20:37:35Z","updated_at":"2026-07-22T22:26:31Z","subjects":["Titanium-Nitride (TiN)","Superconductivity","Qubit","Resonator","Materials"],"languages":["en"],"rights":["Copyright 2015 Gustaf Olson"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/87951","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Eckstein, James N.","Bezryadin, Alexey","Clark, Bryan K","Vieira, Joaquin"]},{"key":"dc:creator","label":"Author","values":["Olson, Gustaf Anders"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-29T20:37:35Z","2015-08","2015-05-29","2015-8"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Titanium-Nitride (TiN)","Superconductivity","Qubit","Resonator","Materials"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2015 Gustaf Olson"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/87951"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This is a study of the growth of titanium-nitride (TiN) by plasma assisted molecular beam epitaxy (MBE) for applications in low loss quantum circuits. Titanium nitride is a material known to have low loss at microwave frequencies which sees practical use in many emerging quantum device architectures. The goal of this research is to investigate improvements in TiN thin films utilizing MBE to produce highly pure, highly crystalline films. A review of the theory of superconducting qubits is given and recent developments in superconducting qubit research are summarized to elucidate how loss has been reduced historically and the importance of materials improvements to the future of scalable quantum computation. The dynamics of epitaxial film growth are discussed, focusing on the formation of a minimum energy surface, the thermally driven kinetics of atoms deposited on the surface, and how these lead to the formation of large scale crystalline domains in the film. An overview of the MBE growth chamber is given and the growth procedure for TiN is discussed. Transport and morphology measurement results are discussed for MBE TiN where, for optimized growth conditions, films are highly crystalline with superconducting transition temperatures(Tc) as high as Tc = 6.1K, matching the value for bulk crystals and exceeding all reported thin film values. Microwave loss measurements of transmission line resonators fabricated from these films are shown to have low-power quality factors(Q) as high as 200,000 and an increase to Q = 400,000 at high power, consistent with the saturation of two-level-systems (TLS) at high power. These results confirm a connection between the high quality crystalline materials produced in this work and low loss in quantum circuits.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2015-09-29 without embargo terms","The student, Gustaf Olson, accepted the attached license on 2015-05-27 at 11:21.","The student, Gustaf Olson, submitted this Dissertation for approval on 2015-05-27 at 11:32.","This Dissertation was approved for publication on 2015-05-29 at 09:44.","DSpace SAF Submission Ingestion Package generated from Vireo submission #8250 on 2015-09-29 at 13:21:16","Made available in DSpace on 2015-09-29T20:37:35Z (GMT). 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The goal of this research is to investigate improvements in TiN thin films utilizing MBE to produce highly pure, highly crystalline films. A review of the theory of superconducting qubits is given and recent developments in superconducting qubit research are summarized to elucidate how loss has been reduced historically and the importance of materials improvements to the future of scalable quantum computation. The dynamics of epitaxial film growth are discussed, focusing on the formation of a minimum energy surface, the thermally driven kinetics of atoms deposited on the surface, and how these lead to the formation of large scale crystalline domains in the film. An overview of the MBE growth chamber is given and the growth procedure for TiN is discussed. Transport and morphology measurement results are discussed for MBE TiN where, for optimized growth conditions, films are highly crystalline with superconducting transition temperatures(Tc) as high as Tc = 6.1K, matching the value for bulk crystals and exceeding all reported thin film values. Microwave loss measurements of transmission line resonators fabricated from these films are shown to have low-power quality factors(Q) as high as 200,000 and an increase to Q = 400,000 at high power, consistent with the saturation of two-level-systems (TLS) at high power. These results confirm a connection between the high quality crystalline materials produced in this work and low loss in quantum circuits.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2015-09-29 without embargo terms","The student, Gustaf Olson, accepted the attached license on 2015-05-27 at 11:21.","The student, Gustaf Olson, submitted this Dissertation for approval on 2015-05-27 at 11:32.","This Dissertation was approved for publication on 2015-05-29 at 09:44.","DSpace SAF Submission Ingestion Package generated from Vireo submission #8250 on 2015-09-29 at 13:21:16","Made available in DSpace on 2015-09-29T20:37:35Z (GMT). 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