{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/84333"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/84333","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Fundamental and Applied Aspects of Electronics Based on Single -Walled Carbon Nanotube Thin Films","abstract":"To improve the performances of SWNT thin film transistors (TFTs), we adopted high capacitance gate dielectrics to reduce the device operation voltage from ∼20 V to ∼1 V and, in related work, the hysteresis has been reduced from levels so large that the transistors could be used effectively as memory devices to values that are nearly negligible. Not only p-channel but also and n-channel and ambipolar devices have been achieved by use of simple polymer coating strategies. Complex digital circuits composed of nearly 100 SWNT TFTs have also been successfully demonstrated. Finally, we demonstrated certain classes of optically transparent devices using SWNT films as electrically active material. These results represent important steps in the development of an SWNT based electronics technology that could find utility in areas such as flexible electronics and others that might complement the capabilities of established systems.","abstract_html":"To improve the performances of SWNT thin film transistors (TFTs), we adopted high capacitance gate dielectrics to reduce the device operation voltage from ∼20 V to ∼1 V and, in related work, the hysteresis has been reduced from levels so large that the transistors could be used effectively as memory devices to values that are nearly negligible. Not only p-channel but also and n-channel and ambipolar devices have been achieved by use of simple polymer coating strategies. Complex digital circuits composed of nearly 100 SWNT TFTs have also been successfully demonstrated. Finally, we demonstrated certain classes of optically transparent devices using SWNT films as electrically active material. These results represent important steps in the development of an SWNT based electronics technology that could find utility in areas such as flexible electronics and others that might complement the capabilities of established systems.","abstract_has_math":false,"creators":["Cao, Qing"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Chemistry","degree_department":null,"school":null,"contributors":["Rogers, John A."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T22:13:59Z","date_published":"2015-09-25T22:13:59Z","updated_at":"2026-07-22T22:26:23Z","subjects":["Chemistry, General"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3362742"],"render_values":[{"text":"(MiAaPQ)AAI3362742","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/84333","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Rogers, John A."]},{"key":"dc:creator","label":"Author","values":["Cao, Qing"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T22:13:59Z","10000-01-01","2009"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Chemistry"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Chemistry, General"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/84333","(MiAaPQ)AAI3362742"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["To improve the performances of SWNT thin film transistors (TFTs), we adopted high capacitance gate dielectrics to reduce the device operation voltage from ∼20 V to ∼1 V and, in related work, the hysteresis has been reduced from levels so large that the transistors could be used effectively as memory devices to values that are nearly negligible. Not only p-channel but also and n-channel and ambipolar devices have been achieved by use of simple polymer coating strategies. Complex digital circuits composed of nearly 100 SWNT TFTs have also been successfully demonstrated. Finally, we demonstrated certain classes of optically transparent devices using SWNT films as electrically active material. These results represent important steps in the development of an SWNT based electronics technology that could find utility in areas such as flexible electronics and others that might complement the capabilities of established systems.","Made available in DSpace on 2015-09-25T22:13:59Z (GMT). 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Not only p-channel but also and n-channel and ambipolar devices have been achieved by use of simple polymer coating strategies. Complex digital circuits composed of nearly 100 SWNT TFTs have also been successfully demonstrated. Finally, we demonstrated certain classes of optically transparent devices using SWNT films as electrically active material. These results represent important steps in the development of an SWNT based electronics technology that could find utility in areas such as flexible electronics and others that might complement the capabilities of established systems.","Made available in DSpace on 2015-09-25T22:13:59Z (GMT). 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