{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/84023"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/84023","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Transition Metal Hydroborate Complexes: Structures, Syntheses, and Use as Chemical Vapor Deposition Precursors","abstract":"Passage of Zr(BH4)4 over heated substrates with a coincident flux of H atoms gives adhesive, mirror-bright films at a growth rate of 60 A/min. These films are smooth on the nanometer scale and possess electrical resistivities as low as 45 muO-cm. The films are free of carbon and have low concentrations of oxygen (∼4 at. %). Deposition at 150°C achieves films of formula ZrB1.8O 0.1. In contrast, films grown under purely thermal conditions or by other plasma-assisted methods have boron-to-metal ratios near 3:1 and oxidize readily in air.","abstract_html":"Passage of Zr(BH4)4 over heated substrates with a coincident flux of H atoms gives adhesive, mirror-bright films at a growth rate of 60 A/min. These films are smooth on the nanometer scale and possess electrical resistivities as low as 45 muO-cm. The films are free of carbon and have low concentrations of oxygen (∼4 at. %). Deposition at 150°C achieves films of formula ZrB1.8O 0.1. In contrast, films grown under purely thermal conditions or by other plasma-assisted methods have boron-to-metal ratios near 3:1 and oxidize readily in air.","abstract_has_math":false,"creators":["Goedde, Dean Matthew"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Chemistry","degree_department":null,"school":null,"contributors":["Girolami, Gregory S."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T22:12:24Z","date_published":"2015-09-25T22:12:24Z","updated_at":"2026-07-22T22:26:22Z","subjects":["Chemistry, Inorganic"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3017083"],"render_values":[{"text":"(MiAaPQ)AAI3017083","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/84023","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Girolami, Gregory S."]},{"key":"dc:creator","label":"Author","values":["Goedde, Dean Matthew"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T22:12:24Z","10000-01-01","2001"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Chemistry"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Chemistry, Inorganic"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/84023","(MiAaPQ)AAI3017083"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Passage of Zr(BH4)4 over heated substrates with a coincident flux of H atoms gives adhesive, mirror-bright films at a growth rate of 60 A/min. These films are smooth on the nanometer scale and possess electrical resistivities as low as 45 muO-cm. The films are free of carbon and have low concentrations of oxygen (∼4 at. %). Deposition at 150°C achieves films of formula ZrB1.8O 0.1. In contrast, films grown under purely thermal conditions or by other plasma-assisted methods have boron-to-metal ratios near 3:1 and oxidize readily in air.","Made available in DSpace on 2015-09-25T22:12:24Z (GMT). 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These films are smooth on the nanometer scale and possess electrical resistivities as low as 45 muO-cm. The films are free of carbon and have low concentrations of oxygen (∼4 at. %). Deposition at 150°C achieves films of formula ZrB1.8O 0.1. In contrast, films grown under purely thermal conditions or by other plasma-assisted methods have boron-to-metal ratios near 3:1 and oxidize readily in air.","Made available in DSpace on 2015-09-25T22:12:24Z (GMT). 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