{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/83996"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/83996","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"The Effects of Peltier Marking on Semiconductor Growth in a Magnetic Field","abstract":"This research represents a model for three dimensional semiconductor growth in a vertical Bridgman process within an externally applied magnetic field with the additional effects of Peltier marking. The magnetic field is strong enough that inertial effects can be neglected and that viscous effects are confined to boundary layers. The objective of this research is a first step in the development of a method to accurately predict the distribution of dopants and species in the melt after a current pulse with a given duration and strength, with a given magnetic field and with a given crystal-melt interface shape. The first model involves an asymptotic solution to provide physical clarification of the flow. In both models the crystal/melt interface is modeled as fr=3r2 where 3<1 . The first model incorporates a variable, a which ranges from 0.25 to 1.0. The second model involves an analytical solution with an arbitrary Ha and a<1 . These models show the how the azimuthal velocity varies with increasing Ha and how the stream function varies in the meridional problem. This gives insight into how the dopant is mixed during the crystal growth process. The results demonstrate that current pulses with relatively weak magnetic fields and modest interface curvature can lead to very strong mixing in the melt.","abstract_html":"This research represents a model for three dimensional semiconductor growth in a vertical Bridgman process within an externally applied magnetic field with the additional effects of Peltier marking. The magnetic field is strong enough that inertial effects can be neglected and that viscous effects are confined to boundary layers. The objective of this research is a first step in the development of a method to accurately predict the distribution of dopants and species in the melt after a current pulse with a given duration and strength, with a given magnetic field and with a given crystal-melt interface shape. The first model involves an asymptotic solution to provide physical clarification of the flow. In both models the crystal/melt interface is modeled as fr=3r2 where 3&lt;1 . The first model incorporates a variable, a which ranges from 0.25 to 1.0. The second model involves an analytical solution with an arbitrary Ha and a&lt;1 . These models show the how the azimuthal velocity varies with increasing Ha and how the stream function varies in the meridional problem. This gives insight into how the dopant is mixed during the crystal growth process. The results demonstrate that current pulses with relatively weak magnetic fields and modest interface curvature can lead to very strong mixing in the melt.","abstract_has_math":false,"creators":["Sellers, Cheryl Casper"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Mechanical Engineering","degree_department":null,"school":null,"contributors":["Walker, John S."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T21:13:04Z","date_published":"2015-09-25T21:13:04Z","updated_at":"2026-07-22T22:26:22Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9953131"],"render_values":[{"text":"(MiAaPQ)AAI9953131","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/83996","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Walker, John S."]},{"key":"dc:creator","label":"Author","values":["Sellers, Cheryl Casper"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T21:13:04Z","10000-01-01","1999"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Mechanical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/83996","(MiAaPQ)AAI9953131"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This research represents a model for three dimensional semiconductor growth in a vertical Bridgman process within an externally applied magnetic field with the additional effects of Peltier marking. The magnetic field is strong enough that inertial effects can be neglected and that viscous effects are confined to boundary layers. The objective of this research is a first step in the development of a method to accurately predict the distribution of dopants and species in the melt after a current pulse with a given duration and strength, with a given magnetic field and with a given crystal-melt interface shape. The first model involves an asymptotic solution to provide physical clarification of the flow. In both models the crystal/melt interface is modeled as fr=3r2 where 3<1 . The first model incorporates a variable, a which ranges from 0.25 to 1.0. The second model involves an analytical solution with an arbitrary Ha and a<1 . These models show the how the azimuthal velocity varies with increasing Ha and how the stream function varies in the meridional problem. This gives insight into how the dopant is mixed during the crystal growth process. The results demonstrate that current pulses with relatively weak magnetic fields and modest interface curvature can lead to very strong mixing in the melt.","Made available in DSpace on 2015-09-25T21:13:04Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9953131.pdf: 3093365 bytes, checksum: 81364b263f7cb7464a8e9fcc8320a8d8 (MD5) Previous issue date: 1999","Embargo set by: Seth Robbins for item 85277 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","74 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999."]},{"key":"dc:title","label":"Title","values":["The Effects of Peltier Marking on Semiconductor Growth in a Magnetic Field"]}]}],"canonical_facts":{"dc:contributor":["Walker, John S."],"dc:creator":["Sellers, Cheryl Casper"],"dc:date":["2015-09-25T21:13:04Z","10000-01-01","1999"],"dc:description":["This research represents a model for three dimensional semiconductor growth in a vertical Bridgman process within an externally applied magnetic field with the additional effects of Peltier marking. The magnetic field is strong enough that inertial effects can be neglected and that viscous effects are confined to boundary layers. The objective of this research is a first step in the development of a method to accurately predict the distribution of dopants and species in the melt after a current pulse with a given duration and strength, with a given magnetic field and with a given crystal-melt interface shape. The first model involves an asymptotic solution to provide physical clarification of the flow. In both models the crystal/melt interface is modeled as fr=3r2 where 3<1 . The first model incorporates a variable, a which ranges from 0.25 to 1.0. The second model involves an analytical solution with an arbitrary Ha and a<1 . These models show the how the azimuthal velocity varies with increasing Ha and how the stream function varies in the meridional problem. This gives insight into how the dopant is mixed during the crystal growth process. The results demonstrate that current pulses with relatively weak magnetic fields and modest interface curvature can lead to very strong mixing in the melt.","Made available in DSpace on 2015-09-25T21:13:04Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9953131.pdf: 3093365 bytes, checksum: 81364b263f7cb7464a8e9fcc8320a8d8 (MD5) Previous issue date: 1999","Embargo set by: Seth Robbins for item 85277 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","74 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999."],"dc:identifier":["http://hdl.handle.net/2142/83996","(MiAaPQ)AAI9953131"],"dc:language":["eng"],"dc:subject":["Engineering, Materials Science"],"dc:title":["The Effects of Peltier Marking on Semiconductor Growth in a Magnetic Field"],"dc:type":["text"],"thesis:degree_discipline":["Mechanical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:22Z"}