{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/83894"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/83894","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Effect of Nanoscale Defects on Electrical and Optical Properties in Iii-V Semiconductors","abstract":"The Schrodinger equation, in a real space k·p Hamiltonian formation, is solved using the finite element method to study effects of edge and screw dislocations on optical properties in GaN. Energy levels and corresponding wave functions are obtained for the conduction and valence bands, and spontaneous emission spectra are evaluated to compare with available experimental results. Inhomogeneous band edge shifts for each subband due to the strain fields associated with each type of dislocation, plus the electrostatic potential of edge dislocations, generate spatial separation between electrons and holes resulting in optical emission reduction. Both calculated and experimental data show emission intensity reduction as dislocation density increases. Dislocation effects in GaAs are then investigated and compared with GaN. It is shown that GaAs is more sensitive to dislocations due to a comparatively light effective mass and large deformation fields of the dislocations.","abstract_html":"The Schrodinger equation, in a real space k·p Hamiltonian formation, is solved using the finite element method to study effects of edge and screw dislocations on optical properties in GaN. Energy levels and corresponding wave functions are obtained for the conduction and valence bands, and spontaneous emission spectra are evaluated to compare with available experimental results. Inhomogeneous band edge shifts for each subband due to the strain fields associated with each type of dislocation, plus the electrostatic potential of edge dislocations, generate spatial separation between electrons and holes resulting in optical emission reduction. Both calculated and experimental data show emission intensity reduction as dislocation density increases. Dislocation effects in GaAs are then investigated and compared with GaN. It is shown that GaAs is more sensitive to dislocations due to a comparatively light effective mass and large deformation fields of the dislocations.","abstract_has_math":false,"creators":["You, Jeong Ho"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Mechanical Engineering","degree_department":null,"school":null,"contributors":["Johnson, Harley T."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T21:12:38Z","date_published":"2015-09-25T21:12:38Z","updated_at":"2026-07-22T22:26:22Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3290447"],"render_values":[{"text":"(MiAaPQ)AAI3290447","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/83894","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Johnson, Harley T."]},{"key":"dc:creator","label":"Author","values":["You, Jeong Ho"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T21:12:38Z","10000-01-01","2007"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Mechanical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/83894","(MiAaPQ)AAI3290447"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The Schrodinger equation, in a real space k·p Hamiltonian formation, is solved using the finite element method to study effects of edge and screw dislocations on optical properties in GaN. Energy levels and corresponding wave functions are obtained for the conduction and valence bands, and spontaneous emission spectra are evaluated to compare with available experimental results. Inhomogeneous band edge shifts for each subband due to the strain fields associated with each type of dislocation, plus the electrostatic potential of edge dislocations, generate spatial separation between electrons and holes resulting in optical emission reduction. Both calculated and experimental data show emission intensity reduction as dislocation density increases. Dislocation effects in GaAs are then investigated and compared with GaN. It is shown that GaAs is more sensitive to dislocations due to a comparatively light effective mass and large deformation fields of the dislocations.","Made available in DSpace on 2015-09-25T21:12:38Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3290447.pdf: 3695013 bytes, checksum: 8e8f5d8c05c4b7b856c8abe9016cd523 (MD5) Previous issue date: 2007","Embargo set by: Seth Robbins for item 85175 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","148 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007."]},{"key":"dc:title","label":"Title","values":["Effect of Nanoscale Defects on Electrical and Optical Properties in Iii-V Semiconductors"]}]}],"canonical_facts":{"dc:contributor":["Johnson, Harley T."],"dc:creator":["You, Jeong Ho"],"dc:date":["2015-09-25T21:12:38Z","10000-01-01","2007"],"dc:description":["The Schrodinger equation, in a real space k·p Hamiltonian formation, is solved using the finite element method to study effects of edge and screw dislocations on optical properties in GaN. Energy levels and corresponding wave functions are obtained for the conduction and valence bands, and spontaneous emission spectra are evaluated to compare with available experimental results. Inhomogeneous band edge shifts for each subband due to the strain fields associated with each type of dislocation, plus the electrostatic potential of edge dislocations, generate spatial separation between electrons and holes resulting in optical emission reduction. Both calculated and experimental data show emission intensity reduction as dislocation density increases. Dislocation effects in GaAs are then investigated and compared with GaN. It is shown that GaAs is more sensitive to dislocations due to a comparatively light effective mass and large deformation fields of the dislocations.","Made available in DSpace on 2015-09-25T21:12:38Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3290447.pdf: 3695013 bytes, checksum: 8e8f5d8c05c4b7b856c8abe9016cd523 (MD5) Previous issue date: 2007","Embargo set by: Seth Robbins for item 85175 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","148 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007."],"dc:identifier":["http://hdl.handle.net/2142/83894","(MiAaPQ)AAI3290447"],"dc:language":["eng"],"dc:subject":["Engineering, Materials Science"],"dc:title":["Effect of Nanoscale Defects on Electrical and Optical Properties in Iii-V Semiconductors"],"dc:type":["text"],"thesis:degree_discipline":["Mechanical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:22Z"}