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Thus, it is observed that film growth rate and uniformity cannot be improved by applying pulse sequence of precursor gas, pulse sequence of inlet mass flow rate, and time-varying rotation speed of the wafer.","abstract_html":"Next, an understanding the influence of the transient operating conditions in the prototypical CVD reactor was sought. Film growth rate shows time varying pattern due to the transient operating conditions. But it oscillates between two end steady states. Thus, it is observed that film growth rate and uniformity cannot be improved by applying pulse sequence of precursor gas, pulse sequence of inlet mass flow rate, and time-varying rotation speed of the wafer.","abstract_has_math":false,"creators":["Luo, Gang"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Mechanical Engineering","degree_department":null,"school":null,"contributors":["S. 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