{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/83756"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/83756","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Modeling Plasma Equipment and Feature Profile in Ionized Metal Physical Vapor Deposition","abstract":"A three-dimensional HPEM is employed to examine the consequences of asymmetric excitation due to the transmission line effects and irregular sputter tracks on species densities and fluxes. It was found that for typical conditions for Al IMPVD the metal species have improved symmetry due to charge exchange reactions and subsequent diffusion. The symmetry and uniformity of the metal species above the wafer significantly improve when increasing the aspect ratio of the plasma region or increasing the pressure, accompanied by a decrease in the magnitude of metal fluxes. Irregular sputter tracks act as asymmetric sources and cause asymmetries in the sputtered metal species and their fluxes to the substrate.","abstract_html":"A three-dimensional HPEM is employed to examine the consequences of asymmetric excitation due to the transmission line effects and irregular sputter tracks on species densities and fluxes. It was found that for typical conditions for Al IMPVD the metal species have improved symmetry due to charge exchange reactions and subsequent diffusion. The symmetry and uniformity of the metal species above the wafer significantly improve when increasing the aspect ratio of the plasma region or increasing the pressure, accompanied by a decrease in the magnitude of metal fluxes. 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