{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82887"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82887","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Surface Morphology Evolution of Epitaxial TiN(001) Layers Grown by Reactive Magnetron Sputtering","abstract":"The group IV-B transition metal nitride TiN is widely employed as a wear-resistant coating on mechanical components and as a diffusion barrier in microelectronic devices. I use the epitaxial growth of single crystal TiN as a model system for insight on the evolution of surface morphology and microstructure in more complex polycrystalline films. Atomically-flat MgO substrates, prepared by air annealing at 950$\\sp\\circ$C for 12 hours, are verified by atomic force microscopy (AFM). Epitaxial TiN layers are grown on MgO(001) by reactive magnetron sputter deposition in pure N$\\sb2$ at $\\rm650<T\\sb{s}<750\\sp\\circ$C. Without energetic ion bombardment, scanning tunneling microscopy (STM) results show that the development of surface morphology is dominated by growth mounds with an aspect-ratio of approximately 0.003; both the roughness amplitude and average separation between mounds follow an approximate power law dependence on film thickness, $t\\sp{\\gamma},$ with $\\gamma=0.25\\pm0.07.$ The island edges exhibit dendritic geometries characteristic of limited step-edge mobility. Low-energy N$\\sb2\\sp+$ ion irradiation during film growth at $\\rm T\\sb{s}=650\\sp\\circ$C leads to both surface smoothing and a decrease in the in-plane length scale, by a factor of $\\approx$1.4, when V$\\rm\\sb{s}$ is increased from 3 to 43 V. However, the exponent which describes the roughening and coarsening is unchanged by the ion bombardment. Increasing T$\\rm\\sb{s}$ to 750$\\sp\\circ$C reduces the effects of N$\\sb2\\sp+$ ion bombardment between 3 and 48 V, but increasing $\\rm V\\sb{s}>48$ V leads to enhanced surface roughening with decreased in-plane length scales resulting from bulk defect production.","abstract_html":"The group IV-B transition metal nitride TiN is widely employed as a wear-resistant coating on mechanical components and as a diffusion barrier in microelectronic devices. I use the epitaxial growth of single crystal TiN as a model system for insight on the evolution of surface morphology and microstructure in more complex polycrystalline films. Atomically-flat MgO substrates, prepared by air annealing at 950$\\sp\\circ$C for 12 hours, are verified by atomic force microscopy (AFM). Epitaxial TiN layers are grown on MgO(001) by reactive magnetron sputter deposition in pure N$\\sb2$ at $\\rm650&lt;T\\sb{s}&lt;750\\sp\\circ$C. Without energetic ion bombardment, scanning tunneling microscopy (STM) results show that the development of surface morphology is dominated by growth mounds with an aspect-ratio of approximately 0.003; both the roughness amplitude and average separation between mounds follow an approximate power law dependence on film thickness, <span class=\"etd-inline-math\">t\\sp{&gamma;},</span> with <span class=\"etd-inline-math\">&gamma;=0.25\\pm0.07.</span> The island edges exhibit dendritic geometries characteristic of limited step-edge mobility. Low-energy N$\\sb2\\sp+$ ion irradiation during film growth at $\\rm T\\sb{s}=650\\sp\\circ$C leads to both surface smoothing and a decrease in the in-plane length scale, by a factor of $\\approx$1.4, when V$\\rm\\sb{s}$ is increased from 3 to 43 V. However, the exponent which describes the roughening and coarsening is unchanged by the ion bombardment. Increasing T$\\rm\\sb{s}$ to 750$\\sp\\circ$C reduces the effects of N$\\sb2\\sp+$ ion bombardment between 3 and 48 V, but increasing $\\rm V\\sb{s}&gt;48$ V leads to enhanced surface roughening with decreased in-plane length scales resulting from bulk defect production.","abstract_has_math":true,"creators":["Karr, Brian William"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Cahill, David G."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:53:29Z","date_published":"2015-09-25T20:53:29Z","updated_at":"2026-07-22T22:26:20Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9812649"],"render_values":[{"text":"(MiAaPQ)AAI9812649","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82887","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Cahill, David G."]},{"key":"dc:creator","label":"Author","values":["Karr, Brian William"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:53:29Z","10000-01-01","1997"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82887","(MiAaPQ)AAI9812649"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The group IV-B transition metal nitride TiN is widely employed as a wear-resistant coating on mechanical components and as a diffusion barrier in microelectronic devices. I use the epitaxial growth of single crystal TiN as a model system for insight on the evolution of surface morphology and microstructure in more complex polycrystalline films. Atomically-flat MgO substrates, prepared by air annealing at 950$\\sp\\circ$C for 12 hours, are verified by atomic force microscopy (AFM). Epitaxial TiN layers are grown on MgO(001) by reactive magnetron sputter deposition in pure N$\\sb2$ at $\\rm650<T\\sb{s}<750\\sp\\circ$C. Without energetic ion bombardment, scanning tunneling microscopy (STM) results show that the development of surface morphology is dominated by growth mounds with an aspect-ratio of approximately 0.003; both the roughness amplitude and average separation between mounds follow an approximate power law dependence on film thickness, $t\\sp{\\gamma},$ with $\\gamma=0.25\\pm0.07.$ The island edges exhibit dendritic geometries characteristic of limited step-edge mobility. Low-energy N$\\sb2\\sp+$ ion irradiation during film growth at $\\rm T\\sb{s}=650\\sp\\circ$C leads to both surface smoothing and a decrease in the in-plane length scale, by a factor of $\\approx$1.4, when V$\\rm\\sb{s}$ is increased from 3 to 43 V. However, the exponent which describes the roughening and coarsening is unchanged by the ion bombardment. Increasing T$\\rm\\sb{s}$ to 750$\\sp\\circ$C reduces the effects of N$\\sb2\\sp+$ ion bombardment between 3 and 48 V, but increasing $\\rm V\\sb{s}>48$ V leads to enhanced surface roughening with decreased in-plane length scales resulting from bulk defect production.","Made available in DSpace on 2015-09-25T20:53:29Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9812649.pdf: 5399177 bytes, checksum: 47346252f186d9358ffb7ac5ad494a57 (MD5) Previous issue date: 1997","Embargo set by: Seth Robbins for item 84168 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","152 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997."]},{"key":"dc:title","label":"Title","values":["Surface Morphology Evolution of Epitaxial TiN(001) Layers Grown by Reactive Magnetron Sputtering"]}]}],"canonical_facts":{"dc:contributor":["Cahill, David G."],"dc:creator":["Karr, Brian William"],"dc:date":["2015-09-25T20:53:29Z","10000-01-01","1997"],"dc:description":["The group IV-B transition metal nitride TiN is widely employed as a wear-resistant coating on mechanical components and as a diffusion barrier in microelectronic devices. I use the epitaxial growth of single crystal TiN as a model system for insight on the evolution of surface morphology and microstructure in more complex polycrystalline films. Atomically-flat MgO substrates, prepared by air annealing at 950$\\sp\\circ$C for 12 hours, are verified by atomic force microscopy (AFM). Epitaxial TiN layers are grown on MgO(001) by reactive magnetron sputter deposition in pure N$\\sb2$ at $\\rm650<T\\sb{s}<750\\sp\\circ$C. Without energetic ion bombardment, scanning tunneling microscopy (STM) results show that the development of surface morphology is dominated by growth mounds with an aspect-ratio of approximately 0.003; both the roughness amplitude and average separation between mounds follow an approximate power law dependence on film thickness, $t\\sp{\\gamma},$ with $\\gamma=0.25\\pm0.07.$ The island edges exhibit dendritic geometries characteristic of limited step-edge mobility. Low-energy N$\\sb2\\sp+$ ion irradiation during film growth at $\\rm T\\sb{s}=650\\sp\\circ$C leads to both surface smoothing and a decrease in the in-plane length scale, by a factor of $\\approx$1.4, when V$\\rm\\sb{s}$ is increased from 3 to 43 V. However, the exponent which describes the roughening and coarsening is unchanged by the ion bombardment. Increasing T$\\rm\\sb{s}$ to 750$\\sp\\circ$C reduces the effects of N$\\sb2\\sp+$ ion bombardment between 3 and 48 V, but increasing $\\rm V\\sb{s}>48$ V leads to enhanced surface roughening with decreased in-plane length scales resulting from bulk defect production.","Made available in DSpace on 2015-09-25T20:53:29Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9812649.pdf: 5399177 bytes, checksum: 47346252f186d9358ffb7ac5ad494a57 (MD5) Previous issue date: 1997","Embargo set by: Seth Robbins for item 84168 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","152 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997."],"dc:identifier":["http://hdl.handle.net/2142/82887","(MiAaPQ)AAI9812649"],"dc:language":["eng"],"dc:subject":["Engineering, Materials Science"],"dc:title":["Surface Morphology Evolution of Epitaxial TiN(001) Layers Grown by Reactive Magnetron Sputtering"],"dc:type":["text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:20Z"}