{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82886"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82886","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Growth of Single Crystal, Metastable Ge(1-X)sn(x) Alloys and Ge(1-X)sn(x)/ge Strained-Layer Superlattices on Ge(001)2 X 1 by Molecular Beam Epitaxy","abstract":"Single-crystal metastable diamond-structure $\\rm Ge\\sb{1-x}Sn\\sb{x}$/Ge strained-layer superlattices (SLS) with x up to 0.24 (the equilibrium solid solubility of Sn in Ge is $<$0.01) were also grown on Ge(001)2x1 substrates using temperature-modulated molecular-beam epitaxy with maximum growth temperatures $\\rm T\\sb{s}\\leq140\\sp\\circ$C. In-situ reflection high energy electron diffraction combined with post-deposition high-resolution x-ray diffraction (HR-XRD) and XTEM results showed that the $\\rm Ge\\sb{1-x}Sn\\sb{x}(001)2x1$ alloy and Ge(001)2x1 spacer layers were commensurate. In fact, the alloy layers were essentially fully strained with an average in-plane lattice constant mismatch of $(1\\pm2)\\times10\\sp{-5}$ and an average tetragonal strain in the growth direction of $(1.39\\pm0.03)\\times10\\sp{-2}$ as determined from HR-XRD reciprocal-space lattice maps obtained using asymmetric (113) reflections. $\\omega$ broadening of the zero-order SLS peak was only 30.1 arc-s full width at half maximum (FWHM), indicating that the degree of mosaicity in these structures was negligible. The intensities and positions of the satellite reflections and finite-thickness interference fringes in HR-XRD 004 rocking curve $\\omega$-2$\\theta$ scans were in good agreement with simulated curves obtained using a dynamical scattering model.","abstract_html":"Single-crystal metastable diamond-structure $\\rm Ge\\sb{1-x}Sn\\sb{x}$/Ge strained-layer superlattices (SLS) with x up to 0.24 (the equilibrium solid solubility of Sn in Ge is $&lt;$0.01) were also grown on Ge(001)2x1 substrates using temperature-modulated molecular-beam epitaxy with maximum growth temperatures $\\rm T\\sb{s}\\leq140\\sp\\circ$C. In-situ reflection high energy electron diffraction combined with post-deposition high-resolution x-ray diffraction (HR-XRD) and XTEM results showed that the $\\rm Ge\\sb{1-x}Sn\\sb{x}(001)2x1$ alloy and Ge(001)2x1 spacer layers were commensurate. In fact, the alloy layers were essentially fully strained with an average in-plane lattice constant mismatch of $(1\\pm2)\\times10\\sp{-5}$ and an average tetragonal strain in the growth direction of $(1.39\\pm0.03)\\times10\\sp{-2}$ as determined from HR-XRD reciprocal-space lattice maps obtained using asymmetric (113) reflections. <span class=\"etd-inline-math\">&omega;</span> broadening of the zero-order SLS peak was only 30.1 arc-s full width at half maximum (FWHM), indicating that the degree of mosaicity in these structures was negligible. The intensities and positions of the satellite reflections and finite-thickness interference fringes in HR-XRD 004 rocking curve <span class=\"etd-inline-math\">&omega;</span>-2<span class=\"etd-inline-math\">&theta;</span> scans were in good agreement with simulated curves obtained using a dynamical scattering model.","abstract_has_math":true,"creators":["Gurdal, Osman"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Joe Greene"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:53:29Z","date_published":"2015-09-25T20:53:29Z","updated_at":"2026-07-22T22:26:20Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9812607"],"render_values":[{"text":"(MiAaPQ)AAI9812607","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82886","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Joe Greene"]},{"key":"dc:creator","label":"Author","values":["Gurdal, Osman"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:53:29Z","10000-01-01","1997"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82886","(MiAaPQ)AAI9812607"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Single-crystal metastable diamond-structure $\\rm Ge\\sb{1-x}Sn\\sb{x}$/Ge strained-layer superlattices (SLS) with x up to 0.24 (the equilibrium solid solubility of Sn in Ge is $<$0.01) were also grown on Ge(001)2x1 substrates using temperature-modulated molecular-beam epitaxy with maximum growth temperatures $\\rm T\\sb{s}\\leq140\\sp\\circ$C. In-situ reflection high energy electron diffraction combined with post-deposition high-resolution x-ray diffraction (HR-XRD) and XTEM results showed that the $\\rm Ge\\sb{1-x}Sn\\sb{x}(001)2x1$ alloy and Ge(001)2x1 spacer layers were commensurate. In fact, the alloy layers were essentially fully strained with an average in-plane lattice constant mismatch of $(1\\pm2)\\times10\\sp{-5}$ and an average tetragonal strain in the growth direction of $(1.39\\pm0.03)\\times10\\sp{-2}$ as determined from HR-XRD reciprocal-space lattice maps obtained using asymmetric (113) reflections. $\\omega$ broadening of the zero-order SLS peak was only 30.1 arc-s full width at half maximum (FWHM), indicating that the degree of mosaicity in these structures was negligible. The intensities and positions of the satellite reflections and finite-thickness interference fringes in HR-XRD 004 rocking curve $\\omega$-2$\\theta$ scans were in good agreement with simulated curves obtained using a dynamical scattering model.","Made available in DSpace on 2015-09-25T20:53:29Z (GMT). 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In-situ reflection high energy electron diffraction combined with post-deposition high-resolution x-ray diffraction (HR-XRD) and XTEM results showed that the $\\rm Ge\\sb{1-x}Sn\\sb{x}(001)2x1$ alloy and Ge(001)2x1 spacer layers were commensurate. In fact, the alloy layers were essentially fully strained with an average in-plane lattice constant mismatch of $(1\\pm2)\\times10\\sp{-5}$ and an average tetragonal strain in the growth direction of $(1.39\\pm0.03)\\times10\\sp{-2}$ as determined from HR-XRD reciprocal-space lattice maps obtained using asymmetric (113) reflections. $\\omega$ broadening of the zero-order SLS peak was only 30.1 arc-s full width at half maximum (FWHM), indicating that the degree of mosaicity in these structures was negligible. The intensities and positions of the satellite reflections and finite-thickness interference fringes in HR-XRD 004 rocking curve $\\omega$-2$\\theta$ scans were in good agreement with simulated curves obtained using a dynamical scattering model.","Made available in DSpace on 2015-09-25T20:53:29Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9812607.pdf: 2931842 bytes, checksum: 6c005feeb416996497fc35df57c9993e (MD5) Previous issue date: 1997","Embargo set by: Seth Robbins for item 84167 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","75 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997."],"dc:identifier":["http://hdl.handle.net/2142/82886","(MiAaPQ)AAI9812607"],"dc:language":["eng"],"dc:subject":["Engineering, Materials Science"],"dc:title":["Growth of Single Crystal, Metastable Ge(1-X)sn(x) Alloys and Ge(1-X)sn(x)/ge Strained-Layer Superlattices on Ge(001)2 X 1 by Molecular Beam Epitaxy"],"dc:type":["text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:20Z"}