{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82859"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82859","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Low-Temperature Chemical Vapor Depostion of Ruthenium and Manganese Nitride Thin Films","abstract":"Manganese nitride films were grown by chemical vapor deposition from the volatile manganese(II) amido precursor bis[di(tert)-butyl)amido]manganese(II)and ammonia. Between 80 and 200°C, the films grown from bis[di(tert )-butyl)amido]manganese(II)contain crystalline eta-Mn3N 2. At 300°C, a mixture of eta- and xi-phase manganese nitride with a manganese carbide impurity is deposited. Oxygen and carbon contamination in the bulk of the films is less than 1 atomic percent. Remarkably, the films are nearly completely crystalline at growth temperatures of 200°C and above. The growth rate of 5.9 nm/min at 200°C is also remarkably high for such a low growth temperature. The crystallinity and rapid growth rates are attributed to the labile metal-ligand bonding characteristic of high-spin MnII. As a result, reactive surface species remain mobile on the surface throughout much of the reaction pathway leading to nitride growth, and can settle into low-energy ordered arrangements before they become incorporated into the bulk by subsequent deposition activity.","abstract_html":"Manganese nitride films were grown by chemical vapor deposition from the volatile manganese(II) amido precursor bis[di(tert)-butyl)amido]manganese(II)and ammonia. Between 80 and 200°C, the films grown from bis[di(tert )-butyl)amido]manganese(II)contain crystalline eta-Mn3N 2. At 300°C, a mixture of eta- and xi-phase manganese nitride with a manganese carbide impurity is deposited. Oxygen and carbon contamination in the bulk of the films is less than 1 atomic percent. Remarkably, the films are nearly completely crystalline at growth temperatures of 200°C and above. The growth rate of 5.9 nm/min at 200°C is also remarkably high for such a low growth temperature. The crystallinity and rapid growth rates are attributed to the labile metal-ligand bonding characteristic of high-spin MnII. As a result, reactive surface species remain mobile on the surface throughout much of the reaction pathway leading to nitride growth, and can settle into low-energy ordered arrangements before they become incorporated into the bulk by subsequent deposition activity.","abstract_has_math":false,"creators":["Lazarz, Teresa S."],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Abelson, John R."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:53:21Z","date_published":"2015-09-25T20:53:21Z","updated_at":"2026-07-22T22:26:20Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3392113"],"render_values":[{"text":"(MiAaPQ)AAI3392113","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82859","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Abelson, John R."]},{"key":"dc:creator","label":"Author","values":["Lazarz, Teresa S."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:53:21Z","10000-01-01","2009"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82859","(MiAaPQ)AAI3392113"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Manganese nitride films were grown by chemical vapor deposition from the volatile manganese(II) amido precursor bis[di(tert)-butyl)amido]manganese(II)and ammonia. Between 80 and 200°C, the films grown from bis[di(tert )-butyl)amido]manganese(II)contain crystalline eta-Mn3N 2. At 300°C, a mixture of eta- and xi-phase manganese nitride with a manganese carbide impurity is deposited. Oxygen and carbon contamination in the bulk of the films is less than 1 atomic percent. Remarkably, the films are nearly completely crystalline at growth temperatures of 200°C and above. The growth rate of 5.9 nm/min at 200°C is also remarkably high for such a low growth temperature. The crystallinity and rapid growth rates are attributed to the labile metal-ligand bonding characteristic of high-spin MnII. As a result, reactive surface species remain mobile on the surface throughout much of the reaction pathway leading to nitride growth, and can settle into low-energy ordered arrangements before they become incorporated into the bulk by subsequent deposition activity.","Made available in DSpace on 2015-09-25T20:53:21Z (GMT). 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Between 80 and 200°C, the films grown from bis[di(tert )-butyl)amido]manganese(II)contain crystalline eta-Mn3N 2. At 300°C, a mixture of eta- and xi-phase manganese nitride with a manganese carbide impurity is deposited. Oxygen and carbon contamination in the bulk of the films is less than 1 atomic percent. Remarkably, the films are nearly completely crystalline at growth temperatures of 200°C and above. The growth rate of 5.9 nm/min at 200°C is also remarkably high for such a low growth temperature. The crystallinity and rapid growth rates are attributed to the labile metal-ligand bonding characteristic of high-spin MnII. As a result, reactive surface species remain mobile on the surface throughout much of the reaction pathway leading to nitride growth, and can settle into low-energy ordered arrangements before they become incorporated into the bulk by subsequent deposition activity.","Made available in DSpace on 2015-09-25T20:53:21Z (GMT). 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