{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82851"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82851","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Quantifying Nanoscale Order in Amorphous Materials via Fluctuation Electron Microscopy","abstract":"The use of the STEM mode of FEM offers significant advantages in identifying artifacts in the variances. Artifacts, caused by non-idealities in the sample unrelated to nanoscale order, can easily dominate the measured variance, producing erroneous results. We show that reexamination and correction of the contributions of artifacts to variance is necessary to obtain an accurate and quantitative description of the structure of amorphous materials. Using variable resolution FEM we are able to extract a characteristic length of ordered regions in two different amorphous silicon samples. Having eliminated the noise contribution to the variance, we show here the first demonstration of a consistent characteristic length at all values of k. The experimental results presented here are the first to be consistent with both FEM theory and simulations.","abstract_html":"The use of the STEM mode of FEM offers significant advantages in identifying artifacts in the variances. Artifacts, caused by non-idealities in the sample unrelated to nanoscale order, can easily dominate the measured variance, producing erroneous results. We show that reexamination and correction of the contributions of artifacts to variance is necessary to obtain an accurate and quantitative description of the structure of amorphous materials. Using variable resolution FEM we are able to extract a characteristic length of ordered regions in two different amorphous silicon samples. Having eliminated the noise contribution to the variance, we show here the first demonstration of a consistent characteristic length at all values of k. The experimental results presented here are the first to be consistent with both FEM theory and simulations.","abstract_has_math":false,"creators":["Bogle, Stephanie Nicole"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Abelson, John R."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:53:19Z","date_published":"2015-09-25T20:53:19Z","updated_at":"2026-07-22T22:26:20Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3391887"],"render_values":[{"text":"(MiAaPQ)AAI3391887","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82851","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Abelson, John R."]},{"key":"dc:creator","label":"Author","values":["Bogle, Stephanie Nicole"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:53:19Z","10000-01-01","2009"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82851","(MiAaPQ)AAI3391887"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The use of the STEM mode of FEM offers significant advantages in identifying artifacts in the variances. Artifacts, caused by non-idealities in the sample unrelated to nanoscale order, can easily dominate the measured variance, producing erroneous results. We show that reexamination and correction of the contributions of artifacts to variance is necessary to obtain an accurate and quantitative description of the structure of amorphous materials. Using variable resolution FEM we are able to extract a characteristic length of ordered regions in two different amorphous silicon samples. Having eliminated the noise contribution to the variance, we show here the first demonstration of a consistent characteristic length at all values of k. The experimental results presented here are the first to be consistent with both FEM theory and simulations.","Made available in DSpace on 2015-09-25T20:53:19Z (GMT). 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Artifacts, caused by non-idealities in the sample unrelated to nanoscale order, can easily dominate the measured variance, producing erroneous results. We show that reexamination and correction of the contributions of artifacts to variance is necessary to obtain an accurate and quantitative description of the structure of amorphous materials. Using variable resolution FEM we are able to extract a characteristic length of ordered regions in two different amorphous silicon samples. Having eliminated the noise contribution to the variance, we show here the first demonstration of a consistent characteristic length at all values of k. The experimental results presented here are the first to be consistent with both FEM theory and simulations.","Made available in DSpace on 2015-09-25T20:53:19Z (GMT). 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