{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82806"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82806","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Chemical Vapor Deposition of Metal Diboride and Metal Oxide Thin Films From Borohydride-Bonded Precursors","abstract":"The high Tc superconductor MgB2 were deposited at low temperatures (T = 300°C--400°C) from a recently developed highly volatile borohydride-bonded Mg precursor, by means of catalyst-enhanced chemical vapor deposition. The films are stoichiometric and highly crystallized, however, the lattice constants shift away from the MgB2 structure to the diboride structure of the catalyst metal, suggesting that Mg is partially substituted by the corresponding metals.","abstract_html":"The high Tc superconductor MgB2 were deposited at low temperatures (T = 300°C--400°C) from a recently developed highly volatile borohydride-bonded Mg precursor, by means of catalyst-enhanced chemical vapor deposition. The films are stoichiometric and highly crystallized, however, the lattice constants shift away from the MgB2 structure to the diboride structure of the catalyst metal, suggesting that Mg is partially substituted by the corresponding metals.","abstract_has_math":false,"creators":["Yang, Yu"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Abelson, John R."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:53:06Z","date_published":"2015-09-25T20:53:06Z","updated_at":"2026-07-22T22:26:20Z","subjects":["Chemistry, Inorganic"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3270058"],"render_values":[{"text":"(MiAaPQ)AAI3270058","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82806","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Abelson, John R."]},{"key":"dc:creator","label":"Author","values":["Yang, Yu"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:53:06Z","10000-01-01","2007"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Chemistry, Inorganic"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82806","(MiAaPQ)AAI3270058"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The high Tc superconductor MgB2 were deposited at low temperatures (T = 300°C--400°C) from a recently developed highly volatile borohydride-bonded Mg precursor, by means of catalyst-enhanced chemical vapor deposition. The films are stoichiometric and highly crystallized, however, the lattice constants shift away from the MgB2 structure to the diboride structure of the catalyst metal, suggesting that Mg is partially substituted by the corresponding metals.","Made available in DSpace on 2015-09-25T20:53:06Z (GMT). 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