{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82764"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82764","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Processing Effects for Integrated PZT: Residual Stress, Thickness, and Dielectric Properties","abstract":"A series-capacitor model accounted for the observed dilution in room-temperature K from >900 to ∼600 as film thickness decreased, but could not account for the absence of the expected dielectric anomaly at high temperatures. Instead, a stress-induced distributed phase transformation related to the polycrystalline nature of the film was proposed to account for the observed behavior. Residual stress reduced the spontaneous polarization values in these specimens to 32muC/cm 2 from the predicted stress-free value of 50muC/cm2. An increase in coercive field was attributed to interfacial capacitance and residual stress, whereas a decrease of 30MPa tensile stress resulted in an increase of d33 from 33 to 65pm/V, irrespective of changes in film thickness. These results isolated, for the first time, the effects of stress and thickness on the dielectric, ferroelectric and piezoelectric properties of PZT films without convolution from the other major variables. The research provides a guideline for the tailoring of properties by modifying mechanical stress in polarizable and deformable thin films.","abstract_html":"A series-capacitor model accounted for the observed dilution in room-temperature K from >900 to ∼600 as film thickness decreased, but could not account for the absence of the expected dielectric anomaly at high temperatures. Instead, a stress-induced distributed phase transformation related to the polycrystalline nature of the film was proposed to account for the observed behavior. Residual stress reduced the spontaneous polarization values in these specimens to 32muC/cm 2 from the predicted stress-free value of 50muC/cm2. An increase in coercive field was attributed to interfacial capacitance and residual stress, whereas a decrease of 30MPa tensile stress resulted in an increase of d33 from 33 to 65pm/V, irrespective of changes in film thickness. These results isolated, for the first time, the effects of stress and thickness on the dielectric, ferroelectric and piezoelectric properties of PZT films without convolution from the other major variables. The research provides a guideline for the tailoring of properties by modifying mechanical stress in polarizable and deformable thin films.","abstract_has_math":false,"creators":["Ong, Ryan Jason"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Payne, David A."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:52:55Z","date_published":"2015-09-25T20:52:55Z","updated_at":"2026-07-22T22:26:18Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3182340"],"render_values":[{"text":"(MiAaPQ)AAI3182340","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82764","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Payne, David A."]},{"key":"dc:creator","label":"Author","values":["Ong, Ryan Jason"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:52:55Z","10000-01-01","2005"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82764","(MiAaPQ)AAI3182340"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["A series-capacitor model accounted for the observed dilution in room-temperature K from >900 to ∼600 as film thickness decreased, but could not account for the absence of the expected dielectric anomaly at high temperatures. Instead, a stress-induced distributed phase transformation related to the polycrystalline nature of the film was proposed to account for the observed behavior. Residual stress reduced the spontaneous polarization values in these specimens to 32muC/cm 2 from the predicted stress-free value of 50muC/cm2. An increase in coercive field was attributed to interfacial capacitance and residual stress, whereas a decrease of 30MPa tensile stress resulted in an increase of d33 from 33 to 65pm/V, irrespective of changes in film thickness. These results isolated, for the first time, the effects of stress and thickness on the dielectric, ferroelectric and piezoelectric properties of PZT films without convolution from the other major variables. The research provides a guideline for the tailoring of properties by modifying mechanical stress in polarizable and deformable thin films.","Made available in DSpace on 2015-09-25T20:52:55Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3182340.pdf: 9835538 bytes, checksum: acfe9f68024062f2952c0a9a01a794e1 (MD5) Previous issue date: 2005","Embargo set by: Seth Robbins for item 84045 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","162 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005."]},{"key":"dc:title","label":"Title","values":["Processing Effects for Integrated PZT: Residual Stress, Thickness, and Dielectric Properties"]}]}],"canonical_facts":{"dc:contributor":["Payne, David A."],"dc:creator":["Ong, Ryan Jason"],"dc:date":["2015-09-25T20:52:55Z","10000-01-01","2005"],"dc:description":["A series-capacitor model accounted for the observed dilution in room-temperature K from >900 to ∼600 as film thickness decreased, but could not account for the absence of the expected dielectric anomaly at high temperatures. Instead, a stress-induced distributed phase transformation related to the polycrystalline nature of the film was proposed to account for the observed behavior. Residual stress reduced the spontaneous polarization values in these specimens to 32muC/cm 2 from the predicted stress-free value of 50muC/cm2. An increase in coercive field was attributed to interfacial capacitance and residual stress, whereas a decrease of 30MPa tensile stress resulted in an increase of d33 from 33 to 65pm/V, irrespective of changes in film thickness. These results isolated, for the first time, the effects of stress and thickness on the dielectric, ferroelectric and piezoelectric properties of PZT films without convolution from the other major variables. The research provides a guideline for the tailoring of properties by modifying mechanical stress in polarizable and deformable thin films.","Made available in DSpace on 2015-09-25T20:52:55Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3182340.pdf: 9835538 bytes, checksum: acfe9f68024062f2952c0a9a01a794e1 (MD5) Previous issue date: 2005","Embargo set by: Seth Robbins for item 84045 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","162 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005."],"dc:identifier":["http://hdl.handle.net/2142/82764","(MiAaPQ)AAI3182340"],"dc:language":["eng"],"dc:subject":["Engineering, Materials Science"],"dc:title":["Processing Effects for Integrated PZT: Residual Stress, Thickness, and Dielectric Properties"],"dc:type":["text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:18Z"}