{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82740"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82740","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Mechanisms and Reaction Paths for Surface Roughening and Epitaxial Breakdown During Molecular Beam Epitaxy: Fundamental Limits","abstract":"Fully-strained Ge1-xSnx layers were grown on Ge(001) to probe the role of incorporated Sn concentrations (C Sn = 1 x 1018 cm-3 to 6.1 at%) on surface roughening pathways leading to EB during LT-MBE (155°C) of compressively strained films. Sn mediates surface morphological evolution through two competing pathways. With x ≲ 0.02, the dominant effect is a Sn-induced smoothening of the surface. At higher x there is a change in Ge1-xSn x(001) growth kinetics due to a rapid increase in compressive strain. This leads to a reduction in h1 with increasing x as strain-induced roughening overcomes the smoothening effects and increases in the roughening rate. I show that by varying C Sn I can controllably manipulate the roughening pathway, and hence h1, over a very wide range.","abstract_html":"Fully-strained Ge1-xSnx layers were grown on Ge(001) to probe the role of incorporated Sn concentrations (C Sn = 1 x 1018 cm-3 to 6.1 at%) on surface roughening pathways leading to EB during LT-MBE (155°C) of compressively strained films. Sn mediates surface morphological evolution through two competing pathways. With x ≲ 0.02, the dominant effect is a Sn-induced smoothening of the surface. At higher x there is a change in Ge1-xSn x(001) growth kinetics due to a rapid increase in compressive strain. This leads to a reduction in h1 with increasing x as strain-induced roughening overcomes the smoothening effects and increases in the roughening rate. I show that by varying C Sn I can controllably manipulate the roughening pathway, and hence h1, over a very wide range.","abstract_has_math":false,"creators":["Bratland, Kenneth Arnold, Jr"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Greene, Joseph E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:52:46Z","date_published":"2015-09-25T20:52:46Z","updated_at":"2026-07-22T22:26:18Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3101802"],"render_values":[{"text":"(MiAaPQ)AAI3101802","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82740","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Greene, Joseph E."]},{"key":"dc:creator","label":"Author","values":["Bratland, Kenneth Arnold, Jr"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:52:46Z","10000-01-01","2003"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82740","(MiAaPQ)AAI3101802"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Fully-strained Ge1-xSnx layers were grown on Ge(001) to probe the role of incorporated Sn concentrations (C Sn = 1 x 1018 cm-3 to 6.1 at%) on surface roughening pathways leading to EB during LT-MBE (155°C) of compressively strained films. Sn mediates surface morphological evolution through two competing pathways. With x ≲ 0.02, the dominant effect is a Sn-induced smoothening of the surface. At higher x there is a change in Ge1-xSn x(001) growth kinetics due to a rapid increase in compressive strain. This leads to a reduction in h1 with increasing x as strain-induced roughening overcomes the smoothening effects and increases in the roughening rate. I show that by varying C Sn I can controllably manipulate the roughening pathway, and hence h1, over a very wide range.","Made available in DSpace on 2015-09-25T20:52:46Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3101802.pdf: 4832616 bytes, checksum: 6edad8f532f1a20c0d3b438a21194576 (MD5) Previous issue date: 2003","Embargo set by: Seth Robbins for item 84021 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","112 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003."]},{"key":"dc:title","label":"Title","values":["Mechanisms and Reaction Paths for Surface Roughening and Epitaxial Breakdown During Molecular Beam Epitaxy: Fundamental Limits"]}]}],"canonical_facts":{"dc:contributor":["Greene, Joseph E."],"dc:creator":["Bratland, Kenneth Arnold, Jr"],"dc:date":["2015-09-25T20:52:46Z","10000-01-01","2003"],"dc:description":["Fully-strained Ge1-xSnx layers were grown on Ge(001) to probe the role of incorporated Sn concentrations (C Sn = 1 x 1018 cm-3 to 6.1 at%) on surface roughening pathways leading to EB during LT-MBE (155°C) of compressively strained films. Sn mediates surface morphological evolution through two competing pathways. With x ≲ 0.02, the dominant effect is a Sn-induced smoothening of the surface. At higher x there is a change in Ge1-xSn x(001) growth kinetics due to a rapid increase in compressive strain. This leads to a reduction in h1 with increasing x as strain-induced roughening overcomes the smoothening effects and increases in the roughening rate. I show that by varying C Sn I can controllably manipulate the roughening pathway, and hence h1, over a very wide range.","Made available in DSpace on 2015-09-25T20:52:46Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3101802.pdf: 4832616 bytes, checksum: 6edad8f532f1a20c0d3b438a21194576 (MD5) Previous issue date: 2003","Embargo set by: Seth Robbins for item 84021 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","112 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003."],"dc:identifier":["http://hdl.handle.net/2142/82740","(MiAaPQ)AAI3101802"],"dc:language":["eng"],"dc:subject":["Physics, Condensed Matter"],"dc:title":["Mechanisms and Reaction Paths for Surface Roughening and Epitaxial Breakdown During Molecular Beam Epitaxy: Fundamental Limits"],"dc:type":["text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:18Z"}