{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82738"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82738","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Mediated Patterning of Sol -Gel Thin Layers: Shrinkage, Decohesion, and Lift-Off","abstract":"The shrinkage and densification of sol-gel layers were determined by in-situ and ex-situ measurements, where a ∼30% decrease in thickness (t) was typical during drying of sol-gel layers (T < 300°C). Constrained shrinkage, resulting from adhesion to the supporting silicon substrate, led to a coherent (crack-free) film with biaxial stresses of ∼200 MPa (t ∼ 50 nm). For ODTS-mediated sol-gel films, however, precise in-situ wafer curvature measurements determined that film stresses never exceeded 75 MPa. Additionally, interfacial adhesive strength between the substrate and the sol-gel film were evaluated for the first time using a unique pulsed-laser stress-wave technique. An adhesive strength threshold of 15 MPa was determined for sol-gel films on ODTS-functionalized silicon, whereas, the threshold strength of films deposited on unmodified silicon was determined as >25 MPa and greater than the fracture strength of silicon. In this work, hydrophobic surface regions, facilitated by directed mu-CP of a molecular film, affected adhesion so as to reduce the substrate constraint and promote de-cohesion of the sol-gel film on the sub-micron scale. That is, selective de-cohesion and lift-off were enabled by the control of local mechanical interfacial constraints.","abstract_html":"The shrinkage and densification of sol-gel layers were determined by in-situ and ex-situ measurements, where a &sim;30% decrease in thickness (t) was typical during drying of sol-gel layers (T < 300&deg;C). Constrained shrinkage, resulting from adhesion to the supporting silicon substrate, led to a coherent (crack-free) film with biaxial stresses of &sim;200 MPa (t &sim; 50 nm). For ODTS-mediated sol-gel films, however, precise in-situ wafer curvature measurements determined that film stresses never exceeded 75 MPa. Additionally, interfacial adhesive strength between the substrate and the sol-gel film were evaluated for the first time using a unique pulsed-laser stress-wave technique. An adhesive strength threshold of 15 MPa was determined for sol-gel films on ODTS-functionalized silicon, whereas, the threshold strength of films deposited on unmodified silicon was determined as >25 MPa and greater than the fracture strength of silicon. In this work, hydrophobic surface regions, facilitated by directed mu-CP of a molecular film, affected adhesion so as to reduce the substrate constraint and promote de-cohesion of the sol-gel film on the sub-micron scale. That is, selective de-cohesion and lift-off were enabled by the control of local mechanical interfacial constraints.","abstract_has_math":false,"creators":["Mikalsen, Erik Arthur"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Payne, David A."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:52:46Z","date_published":"2015-09-25T20:52:46Z","updated_at":"2026-07-22T22:26:18Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3086141"],"render_values":[{"text":"(MiAaPQ)AAI3086141","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82738","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Payne, David A."]},{"key":"dc:creator","label":"Author","values":["Mikalsen, Erik Arthur"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:52:46Z","10000-01-01","2003"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82738","(MiAaPQ)AAI3086141"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The shrinkage and densification of sol-gel layers were determined by in-situ and ex-situ measurements, where a ∼30% decrease in thickness (t) was typical during drying of sol-gel layers (T < 300°C). Constrained shrinkage, resulting from adhesion to the supporting silicon substrate, led to a coherent (crack-free) film with biaxial stresses of ∼200 MPa (t ∼ 50 nm). For ODTS-mediated sol-gel films, however, precise in-situ wafer curvature measurements determined that film stresses never exceeded 75 MPa. Additionally, interfacial adhesive strength between the substrate and the sol-gel film were evaluated for the first time using a unique pulsed-laser stress-wave technique. An adhesive strength threshold of 15 MPa was determined for sol-gel films on ODTS-functionalized silicon, whereas, the threshold strength of films deposited on unmodified silicon was determined as >25 MPa and greater than the fracture strength of silicon. In this work, hydrophobic surface regions, facilitated by directed mu-CP of a molecular film, affected adhesion so as to reduce the substrate constraint and promote de-cohesion of the sol-gel film on the sub-micron scale. 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Constrained shrinkage, resulting from adhesion to the supporting silicon substrate, led to a coherent (crack-free) film with biaxial stresses of ∼200 MPa (t ∼ 50 nm). For ODTS-mediated sol-gel films, however, precise in-situ wafer curvature measurements determined that film stresses never exceeded 75 MPa. Additionally, interfacial adhesive strength between the substrate and the sol-gel film were evaluated for the first time using a unique pulsed-laser stress-wave technique. An adhesive strength threshold of 15 MPa was determined for sol-gel films on ODTS-functionalized silicon, whereas, the threshold strength of films deposited on unmodified silicon was determined as >25 MPa and greater than the fracture strength of silicon. In this work, hydrophobic surface regions, facilitated by directed mu-CP of a molecular film, affected adhesion so as to reduce the substrate constraint and promote de-cohesion of the sol-gel film on the sub-micron scale. 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