{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82711"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82711","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Reaction Paths for Self-Organized Surface Roughening of Silicon-Germanium Alloys During Hydride Gas-Source Molecular Beam Epitaxy","abstract":"Si0.7Ge0.3(001) layers were grown at Ts = 450°C, where strain-induced roughening is completely quenched, to thicknesses greater than the critical value for misfit dislocation formation (tc ≃ 100 nm) to probe the effect of thetaH on cross-hatch formation. At t slightly larger than tc, surface roughness is dominated by single- and multiple-atomic-height steps associated with the interfacial misfits. The surface steps are preferential H desorption sites, thus the increased total step length results in a decrease in thetaH on terraces which increases RSiGe and allows higher adatom ascending step crossing probabilities which, driven by the inhomogeneous strain fields around the misfit dislocation clusters, contributes to the growth of periodic ridges.","abstract_html":"Si0.7Ge0.3(001) layers were grown at Ts = 450°C, where strain-induced roughening is completely quenched, to thicknesses greater than the critical value for misfit dislocation formation (tc ≃ 100 nm) to probe the effect of thetaH on cross-hatch formation. At t slightly larger than tc, surface roughness is dominated by single- and multiple-atomic-height steps associated with the interfacial misfits. The surface steps are preferential H desorption sites, thus the increased total step length results in a decrease in thetaH on terraces which increases RSiGe and allows higher adatom ascending step crossing probabilities which, driven by the inhomogeneous strain fields around the misfit dislocation clusters, contributes to the growth of periodic ridges.","abstract_has_math":false,"creators":["Spila, Timothy Paul"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Greene, Joseph E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:52:35Z","date_published":"2015-09-25T20:52:35Z","updated_at":"2026-07-22T22:26:18Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3030481"],"render_values":[{"text":"(MiAaPQ)AAI3030481","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82711","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Greene, Joseph E."]},{"key":"dc:creator","label":"Author","values":["Spila, Timothy Paul"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:52:35Z","10000-01-01","2001"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82711","(MiAaPQ)AAI3030481"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Si0.7Ge0.3(001) layers were grown at Ts = 450°C, where strain-induced roughening is completely quenched, to thicknesses greater than the critical value for misfit dislocation formation (tc ≃ 100 nm) to probe the effect of thetaH on cross-hatch formation. At t slightly larger than tc, surface roughness is dominated by single- and multiple-atomic-height steps associated with the interfacial misfits. The surface steps are preferential H desorption sites, thus the increased total step length results in a decrease in thetaH on terraces which increases RSiGe and allows higher adatom ascending step crossing probabilities which, driven by the inhomogeneous strain fields around the misfit dislocation clusters, contributes to the growth of periodic ridges.","Made available in DSpace on 2015-09-25T20:52:35Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3030481.pdf: 3493480 bytes, checksum: b2f29d508f58d8301a4359007498aac5 (MD5) Previous issue date: 2001","Embargo set by: Seth Robbins for item 83992 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","84 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001."]},{"key":"dc:title","label":"Title","values":["Reaction Paths for Self-Organized Surface Roughening of Silicon-Germanium Alloys During Hydride Gas-Source Molecular Beam Epitaxy"]}]}],"canonical_facts":{"dc:contributor":["Greene, Joseph E."],"dc:creator":["Spila, Timothy Paul"],"dc:date":["2015-09-25T20:52:35Z","10000-01-01","2001"],"dc:description":["Si0.7Ge0.3(001) layers were grown at Ts = 450°C, where strain-induced roughening is completely quenched, to thicknesses greater than the critical value for misfit dislocation formation (tc ≃ 100 nm) to probe the effect of thetaH on cross-hatch formation. At t slightly larger than tc, surface roughness is dominated by single- and multiple-atomic-height steps associated with the interfacial misfits. The surface steps are preferential H desorption sites, thus the increased total step length results in a decrease in thetaH on terraces which increases RSiGe and allows higher adatom ascending step crossing probabilities which, driven by the inhomogeneous strain fields around the misfit dislocation clusters, contributes to the growth of periodic ridges.","Made available in DSpace on 2015-09-25T20:52:35Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3030481.pdf: 3493480 bytes, checksum: b2f29d508f58d8301a4359007498aac5 (MD5) Previous issue date: 2001","Embargo set by: Seth Robbins for item 83992 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","84 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001."],"dc:identifier":["http://hdl.handle.net/2142/82711","(MiAaPQ)AAI3030481"],"dc:language":["eng"],"dc:subject":["Physics, Condensed Matter"],"dc:title":["Reaction Paths for Self-Organized Surface Roughening of Silicon-Germanium Alloys During Hydride Gas-Source Molecular Beam Epitaxy"],"dc:type":["text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:18Z"}