Fundamentals and Applications of the Hydrogen /Deuterium Isotope Effect in Improved Hot -Carrier Reliability of MOS Devices
type: CreativeWork
description: *Originally published in DAI Vol. 62, No. 6. Reprinted here with corrected author name.
abstract: *Originally published in DAI Vol. 62, No. 6. Reprinted here with corrected author name.
author: Cheng, Kangguo
language: eng
keywords: Engineering, Materials Science
date published: 2015-09-25T20:52:31Z
date modified: 2026-07-22T22:26:18Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/82696