{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82435"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82435","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"In Situ Infrared Spectroscopic Studies of Electrodeposition Additive Adsorption on Copper","abstract":"CTA with bisulfate counterion promoted smooth electrodeposits. Secondary ion mass spectroscopy (SIMS) depth profiles indicated that CTA was not significantly incorporated into copper deposits grown in the presence of CTA with HSO$\\sb4\\sp-$ counterion, except at very high overpotentials ($>$500 mV). Depth profiles of deposits grown in the presence of thiourea showed incorporation of the thiourea predominantly as sulfur. Depth profiles of deposits grown in the presence of CTA with Br$\\sp-$ at sufficiently large overpotentials for electrodeposition rates to be appreciable (about 500 mV) indicated incorporation of CTA and Br. Such deposits also showed very nonuniform morphologies.","abstract_html":"CTA with bisulfate counterion promoted smooth electrodeposits. Secondary ion mass spectroscopy (SIMS) depth profiles indicated that CTA was not significantly incorporated into copper deposits grown in the presence of CTA with HSO$\\sb4\\sp-$ counterion, except at very high overpotentials ($>$500 mV). Depth profiles of deposits grown in the presence of thiourea showed incorporation of the thiourea predominantly as sulfur. Depth profiles of deposits grown in the presence of CTA with Br$\\sp-$ at sufficiently large overpotentials for electrodeposition rates to be appreciable (about 500 mV) indicated incorporation of CTA and Br. Such deposits also showed very nonuniform morphologies.","abstract_has_math":true,"creators":["Papapanayiotou, Demetrius"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Chemical Engineering","degree_department":null,"school":null,"contributors":["Alkire, Richard C."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:44:02Z","date_published":"2015-09-25T20:44:02Z","updated_at":"2026-07-22T22:26:18Z","subjects":["Chemistry, Analytical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9717324"],"render_values":[{"text":"(MiAaPQ)AAI9717324","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82435","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Alkire, Richard C."]},{"key":"dc:creator","label":"Author","values":["Papapanayiotou, Demetrius"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:44:02Z","10000-01-01","1997"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Chemical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Chemistry, Analytical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82435","(MiAaPQ)AAI9717324"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["CTA with bisulfate counterion promoted smooth electrodeposits. Secondary ion mass spectroscopy (SIMS) depth profiles indicated that CTA was not significantly incorporated into copper deposits grown in the presence of CTA with HSO$\\sb4\\sp-$ counterion, except at very high overpotentials ($>$500 mV). Depth profiles of deposits grown in the presence of thiourea showed incorporation of the thiourea predominantly as sulfur. Depth profiles of deposits grown in the presence of CTA with Br$\\sp-$ at sufficiently large overpotentials for electrodeposition rates to be appreciable (about 500 mV) indicated incorporation of CTA and Br. Such deposits also showed very nonuniform morphologies.","Made available in DSpace on 2015-09-25T20:44:02Z (GMT). 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Secondary ion mass spectroscopy (SIMS) depth profiles indicated that CTA was not significantly incorporated into copper deposits grown in the presence of CTA with HSO$\\sb4\\sp-$ counterion, except at very high overpotentials ($>$500 mV). Depth profiles of deposits grown in the presence of thiourea showed incorporation of the thiourea predominantly as sulfur. Depth profiles of deposits grown in the presence of CTA with Br$\\sp-$ at sufficiently large overpotentials for electrodeposition rates to be appreciable (about 500 mV) indicated incorporation of CTA and Br. Such deposits also showed very nonuniform morphologies.","Made available in DSpace on 2015-09-25T20:44:02Z (GMT). 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