Effect of Additives and Substrate Resistance on Shape Evolution During Electrodeposition: Nucleation, Growth and Trench Infill for Copper Interconnects
type: CreativeWork
description: Cu nucleation and growth on resistive thin gold and ruthenium films was carried out in a electrochemical cell. A current pulse technique was found to produce a higher nucleation density that served to reduce the terminal effect and to result in more uniform deposit thickness and coalesce more rapid across the entire resistive strip. The best results were obtained with high PEG/C1- and low SPS concentration, and with a current pulse regime of 40 mA/cm2 for 0.1 s and -0.0006 A for 1 s. The current pulse technique could also produce denser nuclei number at the location near the far end of Ru films than the steady galvanostatic deposition.
abstract: Cu nucleation and growth on resistive thin gold and ruthenium films was carried out in a electrochemical cell. A current pulse technique was found to produce a higher nucleation density that served to reduce the terminal effect and to result in more uniform deposit thickness and coalesce more rapid across the entire resistive strip. The best results were obtained with high PEG/C1- and low SPS concentration, and with a current pulse regime of 40 mA/cm2 for 0.1 s and -0.0006 A for 1 s. The current pulse technique could also produce denser nuclei number at the location near the far end of Ru films than the steady galvanostatic deposition.
author: Qin, Yan
language: eng
keywords: Engineering, Chemical
date published: 2015-09-25T20:43:27Z
date modified: 2026-07-22T22:26:18Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/82385