{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81325"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81325","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Ion -Implanted GaAs MESFET MMICs for 77-Ghz Automotive Radar","abstract":"This dissertation summarizes the design and performance of a set of MMICs fabricated at the University of Illinois in a 0.12-mum direct ion-implanted GaAs MESFET process. The circuits are suitable for insertion into a 77-GHz automotive radar system. This work develops non-linear, linear and noise models for the MESFET and Schottky diode and synthesizes models for a variety of coplanar passive components. All of the models are verified with comparisons to measured data through W-band. This work then presents measured and simulated performance characteristics of the MMICs. A three-stage amplifier exhibits 8 dB of gain, and each diode and FET-based mixer exhibits less than 15 dB of conversion loss at 77 GHz. These results demonstrate the potential of ion-implanted MESFET technology at millimeter-wave frequencies.","abstract_html":"This dissertation summarizes the design and performance of a set of MMICs fabricated at the University of Illinois in a 0.12-mum direct ion-implanted GaAs MESFET process. The circuits are suitable for insertion into a 77-GHz automotive radar system. This work develops non-linear, linear and noise models for the MESFET and Schottky diode and synthesizes models for a variety of coplanar passive components. All of the models are verified with comparisons to measured data through W-band. This work then presents measured and simulated performance characteristics of the MMICs. A three-stage amplifier exhibits 8 dB of gain, and each diode and FET-based mixer exhibits less than 15 dB of conversion loss at 77 GHz. These results demonstrate the potential of ion-implanted MESFET technology at millimeter-wave frequencies.","abstract_has_math":false,"creators":["Shimon, Robert Leon"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Feng, Milton"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:10:35Z","date_published":"2015-09-25T20:10:35Z","updated_at":"2026-07-22T22:26:16Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9955667"],"render_values":[{"text":"(MiAaPQ)AAI9955667","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81325","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton"]},{"key":"dc:creator","label":"Author","values":["Shimon, Robert Leon"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:10:35Z","10000-01-01","2000"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81325","(MiAaPQ)AAI9955667"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This dissertation summarizes the design and performance of a set of MMICs fabricated at the University of Illinois in a 0.12-mum direct ion-implanted GaAs MESFET process. The circuits are suitable for insertion into a 77-GHz automotive radar system. This work develops non-linear, linear and noise models for the MESFET and Schottky diode and synthesizes models for a variety of coplanar passive components. All of the models are verified with comparisons to measured data through W-band. This work then presents measured and simulated performance characteristics of the MMICs. A three-stage amplifier exhibits 8 dB of gain, and each diode and FET-based mixer exhibits less than 15 dB of conversion loss at 77 GHz. These results demonstrate the potential of ion-implanted MESFET technology at millimeter-wave frequencies.","Made available in DSpace on 2015-09-25T20:10:35Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9955667.pdf: 5221944 bytes, checksum: ac15aa276546e6c4289468df577fda51 (MD5) Previous issue date: 2000","Embargo set by: Seth Robbins for item 82606 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","126 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000."]},{"key":"dc:title","label":"Title","values":["Ion -Implanted GaAs MESFET MMICs for 77-Ghz Automotive Radar"]}]}],"canonical_facts":{"dc:contributor":["Feng, Milton"],"dc:creator":["Shimon, Robert Leon"],"dc:date":["2015-09-25T20:10:35Z","10000-01-01","2000"],"dc:description":["This dissertation summarizes the design and performance of a set of MMICs fabricated at the University of Illinois in a 0.12-mum direct ion-implanted GaAs MESFET process. The circuits are suitable for insertion into a 77-GHz automotive radar system. This work develops non-linear, linear and noise models for the MESFET and Schottky diode and synthesizes models for a variety of coplanar passive components. All of the models are verified with comparisons to measured data through W-band. This work then presents measured and simulated performance characteristics of the MMICs. A three-stage amplifier exhibits 8 dB of gain, and each diode and FET-based mixer exhibits less than 15 dB of conversion loss at 77 GHz. These results demonstrate the potential of ion-implanted MESFET technology at millimeter-wave frequencies.","Made available in DSpace on 2015-09-25T20:10:35Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9955667.pdf: 5221944 bytes, checksum: ac15aa276546e6c4289468df577fda51 (MD5) Previous issue date: 2000","Embargo set by: Seth Robbins for item 82606 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","126 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000."],"dc:identifier":["http://hdl.handle.net/2142/81325","(MiAaPQ)AAI9955667"],"dc:language":["eng"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Ion -Implanted GaAs MESFET MMICs for 77-Ghz Automotive Radar"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:16Z"}