Predicting CMOS Hot Carrier Degradation in VLSI Circuits
type: CreativeWork
description: Reliability simulation of a 51-stage ring-oscillator was performed. The circuit lifetime improvement due to D2 anneal can be well estimated by the device dc lifetime improvement data.
abstract: Reliability simulation of a 51-stage ring-oscillator was performed. The circuit lifetime improvement due to D2 anneal can be well estimated by the device dc lifetime improvement data.
author: Li, Erhong
language: eng
keywords: Engineering, Electronics and Electrical
date published: 2015-09-25T20:10:29Z
date modified: 2026-07-22T22:26:16Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/81309