{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81304"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81304","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Physical and Electrical Properties of Hot -Carrier Degradation of Silicon *Mos Transistors Processed in Deuterium and Hydrogen","abstract":"\"An extensive experimental investigation has been carried out to study the benefits of the deuterium annealing of MOS transistors to achieve hot-carrier lifetime improvement. Deuterium processing as a function of the process parameters such as temperature, time, and pressure for MOS transistors with one level and multilevels of metalization has been studied. Lifetime improvements of 10--80 times have been demonstrated for chips with one level and multilevels of metalization. Therefore, it is feasible to use deuterium to replace hydrogen in manufacturing integrated circuits with sophisticated multiple levels of interconnection. The classical concept and theory suggest that the degradation of MOS transistors is caused by interface trap generation resulting from \"\"hot-carrier injection.\"\" New experiments for the deuterium isotope effect for hot-hole and hot-electron injection have been performed to probe the mechanism for the interface trap generation in n-MOS transistors in the presence of hot-hole and hot-electron injection. It is shown that channel hot electrons, not carriers injected into the gate oxide, are primarily responsible for interface trap generation for standard hot-carrier stressing. It is also shown that the origin of the deuterium isotope effect is due to multiple vibrational excitation of the Si-H/D bonds. The de-excitation or quenching process is mass dependent. The new mechanism is used to analyze the hot-carrier degradation characteristics of MOS transistors.\"","abstract_html":""An extensive experimental investigation has been carried out to study the benefits of the deuterium annealing of MOS transistors to achieve hot-carrier lifetime improvement. Deuterium processing as a function of the process parameters such as temperature, time, and pressure for MOS transistors with one level and multilevels of metalization has been studied. Lifetime improvements of 10--80 times have been demonstrated for chips with one level and multilevels of metalization. Therefore, it is feasible to use deuterium to replace hydrogen in manufacturing integrated circuits with sophisticated multiple levels of interconnection. The classical concept and theory suggest that the degradation of MOS transistors is caused by interface trap generation resulting from ""hot-carrier injection."" New experiments for the deuterium isotope effect for hot-hole and hot-electron injection have been performed to probe the mechanism for the interface trap generation in n-MOS transistors in the presence of hot-hole and hot-electron injection. It is shown that channel hot electrons, not carriers injected into the gate oxide, are primarily responsible for interface trap generation for standard hot-carrier stressing. It is also shown that the origin of the deuterium isotope effect is due to multiple vibrational excitation of the Si-H/D bonds. The de-excitation or quenching process is mass dependent. The new mechanism is used to analyze the hot-carrier degradation characteristics of MOS transistors."","abstract_has_math":false,"creators":["Chen, Zhi"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Lyding, Joseph W."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:10:28Z","date_published":"2015-09-25T20:10:28Z","updated_at":"2026-07-22T22:26:16Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9952988"],"render_values":[{"text":"(MiAaPQ)AAI9952988","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81304","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Lyding, Joseph W."]},{"key":"dc:creator","label":"Author","values":["Chen, Zhi"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:10:28Z","10000-01-01","1999"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81304","(MiAaPQ)AAI9952988"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["\"An extensive experimental investigation has been carried out to study the benefits of the deuterium annealing of MOS transistors to achieve hot-carrier lifetime improvement. Deuterium processing as a function of the process parameters such as temperature, time, and pressure for MOS transistors with one level and multilevels of metalization has been studied. Lifetime improvements of 10--80 times have been demonstrated for chips with one level and multilevels of metalization. Therefore, it is feasible to use deuterium to replace hydrogen in manufacturing integrated circuits with sophisticated multiple levels of interconnection. The classical concept and theory suggest that the degradation of MOS transistors is caused by interface trap generation resulting from \"\"hot-carrier injection.\"\" New experiments for the deuterium isotope effect for hot-hole and hot-electron injection have been performed to probe the mechanism for the interface trap generation in n-MOS transistors in the presence of hot-hole and hot-electron injection. It is shown that channel hot electrons, not carriers injected into the gate oxide, are primarily responsible for interface trap generation for standard hot-carrier stressing. It is also shown that the origin of the deuterium isotope effect is due to multiple vibrational excitation of the Si-H/D bonds. The de-excitation or quenching process is mass dependent. The new mechanism is used to analyze the hot-carrier degradation characteristics of MOS transistors.\"","Made available in DSpace on 2015-09-25T20:10:28Z (GMT). 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Deuterium processing as a function of the process parameters such as temperature, time, and pressure for MOS transistors with one level and multilevels of metalization has been studied. Lifetime improvements of 10--80 times have been demonstrated for chips with one level and multilevels of metalization. Therefore, it is feasible to use deuterium to replace hydrogen in manufacturing integrated circuits with sophisticated multiple levels of interconnection. The classical concept and theory suggest that the degradation of MOS transistors is caused by interface trap generation resulting from \"\"hot-carrier injection.\"\" New experiments for the deuterium isotope effect for hot-hole and hot-electron injection have been performed to probe the mechanism for the interface trap generation in n-MOS transistors in the presence of hot-hole and hot-electron injection. It is shown that channel hot electrons, not carriers injected into the gate oxide, are primarily responsible for interface trap generation for standard hot-carrier stressing. It is also shown that the origin of the deuterium isotope effect is due to multiple vibrational excitation of the Si-H/D bonds. The de-excitation or quenching process is mass dependent. The new mechanism is used to analyze the hot-carrier degradation characteristics of MOS transistors.\"","Made available in DSpace on 2015-09-25T20:10:28Z (GMT). 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