{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81234"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81234","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"A Sub-0.1-Micron PtSi Schottky Source/drain MOSFET","abstract":"The devices are fabricated with lightly doped silicon substrates, 19-A to 34-A gate oxide, $\\sim$0.05-$\\mu$um gate lithography, 100-A sidewall oxides, self-aligned PtSi, and no intentional doping. The thin gate and sidewall oxides enable high field emission currents at low voltages. These devices exhibit on-state currents of 200-400 $\\mu$A/$\\mu$m and on-off ratios of 20 to 50. Cryogenic refrigeration of the devices reduce the off-state leakage current by several orders of magnitude.","abstract_html":"The devices are fabricated with lightly doped silicon substrates, 19-A to 34-A gate oxide, $\\sim$0.05-<span class=\"etd-inline-math\">&mu;</span>um gate lithography, 100-A sidewall oxides, self-aligned PtSi, and no intentional doping. The thin gate and sidewall oxides enable high field emission currents at low voltages. These devices exhibit on-state currents of 200-400 <span class=\"etd-inline-math\">&mu;</span>A/<span class=\"etd-inline-math\">&mu;</span>m and on-off ratios of 20 to 50. Cryogenic refrigeration of the devices reduce the off-state leakage current by several orders of magnitude.","abstract_has_math":true,"creators":["Wang, Chinlee"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Tucker, John R."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:10:10Z","date_published":"2015-09-25T20:10:10Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9834757"],"render_values":[{"text":"(MiAaPQ)AAI9834757","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81234","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Tucker, John R."]},{"key":"dc:creator","label":"Author","values":["Wang, Chinlee"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:10:10Z","10000-01-01","1998"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81234","(MiAaPQ)AAI9834757"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The devices are fabricated with lightly doped silicon substrates, 19-A to 34-A gate oxide, $\\sim$0.05-$\\mu$um gate lithography, 100-A sidewall oxides, self-aligned PtSi, and no intentional doping. The thin gate and sidewall oxides enable high field emission currents at low voltages. These devices exhibit on-state currents of 200-400 $\\mu$A/$\\mu$m and on-off ratios of 20 to 50. Cryogenic refrigeration of the devices reduce the off-state leakage current by several orders of magnitude.","Made available in DSpace on 2015-09-25T20:10:10Z (GMT). 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The thin gate and sidewall oxides enable high field emission currents at low voltages. These devices exhibit on-state currents of 200-400 $\\mu$A/$\\mu$m and on-off ratios of 20 to 50. Cryogenic refrigeration of the devices reduce the off-state leakage current by several orders of magnitude.","Made available in DSpace on 2015-09-25T20:10:10Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9834757.pdf: 2180219 bytes, checksum: ddb958ce3cf4b15caf1044be32611326 (MD5) Previous issue date: 1998","Embargo set by: Seth Robbins for item 82515 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","51 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998."],"dc:identifier":["http://hdl.handle.net/2142/81234","(MiAaPQ)AAI9834757"],"dc:language":["eng"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["A Sub-0.1-Micron PtSi Schottky Source/drain MOSFET"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:15Z"}