{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81176"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81176","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Temperature and Spatial Hole Burning Effects in Semiconductor Lasers and Integrated Optical Devices","abstract":"The effects of temperature and spatial hole burning are investigated in long-wavelength InP-based lasers and integrated optical devices, including Fabry-Perot (FP) lasers, distributed-feedback (DFB) lasers, and integrated electroabsorption modulator with DFB lasers (EML). First, the temperature dependence of bulk InGaAsP semiconductor laser diodes is analyzed using a consistent method involving gain and spontaneous emission measurements to isolate the temperature-sensitive effects. Second, longitudinal spatial hole burning is examined theoretically and experimentally in both Fabry-Perot and index-coupled distributed-feedback lasers. The photon density profiles are calculated and compared with the carrier density profiles extracted from spontaneous emission measurements. The facet reflection coatings have a large impact on the spatial hole burning in laser diodes. Next, a longitudinal model using the transfer-matrix method and coupled-mode theory is developed for integrated devices. The model is applied to the characterization of an integrated electroabsorption modulator with a distributed-feedback laser. It is shown that the adiabatic wavelength chirping of the EML is very sensitive to the optical feedback from the facets. Finally, a four-channel DFB laser array integrated with a semiconductor optical amplifier and electroabsorption modulator is designed and fabricated. Tunable three-electrode curved-waveguide DFB lasers are used to generate the multiple wavelengths. The output power per channel is as high as 2 mW, and the device operates successfully at 2.5 Gbit/s.","abstract_html":"The effects of temperature and spatial hole burning are investigated in long-wavelength InP-based lasers and integrated optical devices, including Fabry-Perot (FP) lasers, distributed-feedback (DFB) lasers, and integrated electroabsorption modulator with DFB lasers (EML). First, the temperature dependence of bulk InGaAsP semiconductor laser diodes is analyzed using a consistent method involving gain and spontaneous emission measurements to isolate the temperature-sensitive effects. Second, longitudinal spatial hole burning is examined theoretically and experimentally in both Fabry-Perot and index-coupled distributed-feedback lasers. The photon density profiles are calculated and compared with the carrier density profiles extracted from spontaneous emission measurements. The facet reflection coatings have a large impact on the spatial hole burning in laser diodes. Next, a longitudinal model using the transfer-matrix method and coupled-mode theory is developed for integrated devices. The model is applied to the characterization of an integrated electroabsorption modulator with a distributed-feedback laser. It is shown that the adiabatic wavelength chirping of the EML is very sensitive to the optical feedback from the facets. Finally, a four-channel DFB laser array integrated with a semiconductor optical amplifier and electroabsorption modulator is designed and fabricated. Tunable three-electrode curved-waveguide DFB lasers are used to generate the multiple wavelengths. The output power per channel is as high as 2 mW, and the device operates successfully at 2.5 Gbit/s.","abstract_has_math":false,"creators":["Fang, Wei-Chiao William"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Chuang, Shun-Lien"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:09:55Z","date_published":"2015-09-25T20:09:55Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Physics, Optics"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9737099"],"render_values":[{"text":"(MiAaPQ)AAI9737099","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81176","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Chuang, Shun-Lien"]},{"key":"dc:creator","label":"Author","values":["Fang, Wei-Chiao William"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:09:55Z","10000-01-01","1997"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Optics"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81176","(MiAaPQ)AAI9737099"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The effects of temperature and spatial hole burning are investigated in long-wavelength InP-based lasers and integrated optical devices, including Fabry-Perot (FP) lasers, distributed-feedback (DFB) lasers, and integrated electroabsorption modulator with DFB lasers (EML). First, the temperature dependence of bulk InGaAsP semiconductor laser diodes is analyzed using a consistent method involving gain and spontaneous emission measurements to isolate the temperature-sensitive effects. Second, longitudinal spatial hole burning is examined theoretically and experimentally in both Fabry-Perot and index-coupled distributed-feedback lasers. The photon density profiles are calculated and compared with the carrier density profiles extracted from spontaneous emission measurements. The facet reflection coatings have a large impact on the spatial hole burning in laser diodes. Next, a longitudinal model using the transfer-matrix method and coupled-mode theory is developed for integrated devices. The model is applied to the characterization of an integrated electroabsorption modulator with a distributed-feedback laser. It is shown that the adiabatic wavelength chirping of the EML is very sensitive to the optical feedback from the facets. Finally, a four-channel DFB laser array integrated with a semiconductor optical amplifier and electroabsorption modulator is designed and fabricated. Tunable three-electrode curved-waveguide DFB lasers are used to generate the multiple wavelengths. The output power per channel is as high as 2 mW, and the device operates successfully at 2.5 Gbit/s.","Made available in DSpace on 2015-09-25T20:09:55Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9737099.pdf: 5211339 bytes, checksum: 606adab7897e80ae7f57b0d758fcc8f2 (MD5) Previous issue date: 1997","Embargo set by: Seth Robbins for item 82457 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","114 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997."]},{"key":"dc:title","label":"Title","values":["Temperature and Spatial Hole Burning Effects in Semiconductor Lasers and Integrated Optical Devices"]}]}],"canonical_facts":{"dc:contributor":["Chuang, Shun-Lien"],"dc:creator":["Fang, Wei-Chiao William"],"dc:date":["2015-09-25T20:09:55Z","10000-01-01","1997"],"dc:description":["The effects of temperature and spatial hole burning are investigated in long-wavelength InP-based lasers and integrated optical devices, including Fabry-Perot (FP) lasers, distributed-feedback (DFB) lasers, and integrated electroabsorption modulator with DFB lasers (EML). First, the temperature dependence of bulk InGaAsP semiconductor laser diodes is analyzed using a consistent method involving gain and spontaneous emission measurements to isolate the temperature-sensitive effects. Second, longitudinal spatial hole burning is examined theoretically and experimentally in both Fabry-Perot and index-coupled distributed-feedback lasers. The photon density profiles are calculated and compared with the carrier density profiles extracted from spontaneous emission measurements. The facet reflection coatings have a large impact on the spatial hole burning in laser diodes. Next, a longitudinal model using the transfer-matrix method and coupled-mode theory is developed for integrated devices. The model is applied to the characterization of an integrated electroabsorption modulator with a distributed-feedback laser. It is shown that the adiabatic wavelength chirping of the EML is very sensitive to the optical feedback from the facets. Finally, a four-channel DFB laser array integrated with a semiconductor optical amplifier and electroabsorption modulator is designed and fabricated. Tunable three-electrode curved-waveguide DFB lasers are used to generate the multiple wavelengths. The output power per channel is as high as 2 mW, and the device operates successfully at 2.5 Gbit/s.","Made available in DSpace on 2015-09-25T20:09:55Z (GMT). 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