{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81170"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81170","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Cross-Sectional Scanning Tunneling Microscopy Investigations of Cleaved Iii-V Heterostructures","abstract":"Fabrication technology and device sizes have reached the point where fluctuations on the atomic level may affect device performance. The need for a tool to characterize these structures has been satisfied by cross-sectional scanning tunneling microscopy (XSTM). This thesis details the development and application of XSTM to III-V heterostructures. An ultra-high vacuum (UHV) system dedicated to XSTM has been specifically designed and constructed as part of this work. Reported for the first time are XSTM cross-sections of self-assembled InAs quantum dots, XSTM cross-sections of quantum wires created by the strain-induced lateral-layer ordering (SILO) process as well as the first XSTM data on working device structures. These working device structures include a few resonant tunneling diode (RTD) structures, a quantum well infrared photodetector structure and a modulation doped field effect transistor (MODFET) structure. XSTM has proved useful in characterizing interface roughness, alloy fluctuations and individual atomic positions.","abstract_html":"Fabrication technology and device sizes have reached the point where fluctuations on the atomic level may affect device performance. The need for a tool to characterize these structures has been satisfied by cross-sectional scanning tunneling microscopy (XSTM). This thesis details the development and application of XSTM to III-V heterostructures. An ultra-high vacuum (UHV) system dedicated to XSTM has been specifically designed and constructed as part of this work. Reported for the first time are XSTM cross-sections of self-assembled InAs quantum dots, XSTM cross-sections of quantum wires created by the strain-induced lateral-layer ordering (SILO) process as well as the first XSTM data on working device structures. These working device structures include a few resonant tunneling diode (RTD) structures, a quantum well infrared photodetector structure and a modulation doped field effect transistor (MODFET) structure. XSTM has proved useful in characterizing interface roughness, alloy fluctuations and individual atomic positions.","abstract_has_math":false,"creators":["Wu, Warren"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Tucker, John R."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:09:53Z","date_published":"2015-09-25T20:09:53Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9717349"],"render_values":[{"text":"(MiAaPQ)AAI9717349","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81170","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Tucker, John R."]},{"key":"dc:creator","label":"Author","values":["Wu, Warren"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:09:53Z","10000-01-01","1997"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81170","(MiAaPQ)AAI9717349"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Fabrication technology and device sizes have reached the point where fluctuations on the atomic level may affect device performance. 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