{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81166"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81166","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Manufacturable Millimeter-Wave Gallium Arsenide MESFET Integrated Circuit Technology","abstract":"Speed, noise and gain measurements are reviewed for discrete and monolithic millimeter-wave and digital ICs. Future plans for low-noise 0.10 $\\mu$m T-gate FETs using ion-implantation and electron-beam lithography techniques are also discussed.","abstract_html":"Speed, noise and gain measurements are reviewed for discrete and monolithic millimeter-wave and digital ICs. Future plans for low-noise 0.10 <span class=\"etd-inline-math\">&mu;</span>m T-gate FETs using ion-implantation and electron-beam lithography techniques are also discussed.","abstract_has_math":true,"creators":["Apostolakis, Peter J."],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Feng, Milton"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:09:50Z","date_published":"2015-09-25T20:09:50Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9625107"],"render_values":[{"text":"(MiAaPQ)AAI9625107","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81166","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton"]},{"key":"dc:creator","label":"Author","values":["Apostolakis, Peter J."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:09:50Z","10000-01-01","1996"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81166","(MiAaPQ)AAI9625107"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Speed, noise and gain measurements are reviewed for discrete and monolithic millimeter-wave and digital ICs. Future plans for low-noise 0.10 $\\mu$m T-gate FETs using ion-implantation and electron-beam lithography techniques are also discussed.","Made available in DSpace on 2015-09-25T20:09:50Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9625107.pdf: 5174443 bytes, checksum: 92cd0f6fef6ad844e104241019da60a8 (MD5) Previous issue date: 1996","Embargo set by: Seth Robbins for item 82447 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","112 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1996."]},{"key":"dc:title","label":"Title","values":["Manufacturable Millimeter-Wave Gallium Arsenide MESFET Integrated Circuit Technology"]}]}],"canonical_facts":{"dc:contributor":["Feng, Milton"],"dc:creator":["Apostolakis, Peter J."],"dc:date":["2015-09-25T20:09:50Z","10000-01-01","1996"],"dc:description":["Speed, noise and gain measurements are reviewed for discrete and monolithic millimeter-wave and digital ICs. Future plans for low-noise 0.10 $\\mu$m T-gate FETs using ion-implantation and electron-beam lithography techniques are also discussed.","Made available in DSpace on 2015-09-25T20:09:50Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9625107.pdf: 5174443 bytes, checksum: 92cd0f6fef6ad844e104241019da60a8 (MD5) Previous issue date: 1996","Embargo set by: Seth Robbins for item 82447 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","112 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1996."],"dc:identifier":["http://hdl.handle.net/2142/81166","(MiAaPQ)AAI9625107"],"dc:language":["eng"],"dc:subject":["Engineering, Materials Science"],"dc:title":["Manufacturable Millimeter-Wave Gallium Arsenide MESFET Integrated Circuit Technology"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:15Z"}