{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81155"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81155","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Drifting -Dipole Noise Model of Nanometer MOSFETs for Radio Frequency Integrated Circuit Design","abstract":"As the MOSFET is scaled down, the lateral field across the device channel becomes comparable to, or even exceeds, the vertical field. The device can no longer be considered as operating under equilibrium condition, and the thermal noise theory is no longer applicable to predicting its performance. This work describes a new noise formulation that takes into account high-field effects by using the concept of unrelaxable drifting dipoles. The proposed noise model is verified for single devices as well as for integrated circuits. Excellent fitting results are achieved for the measured noise parameters of single 120-nm MOSFETs. For circuit validation, two high-performance low-noise amplifiers (LNA) have been demonstrated. The 3.1--10.6 GHz Ultra Wideband LNA shows very low noise figures NF of 3.5 to 4.3 dB as well as superior input-referred third-order interception points IIP 3 of 3.5 to 5.2 dBm across the design bandwidth. The other circuit, a 24-GHz LNA, achieves a gain of 19 dB, the highest gain published to date at this frequency band, while maintaining a comparative noise figure NF of 3.8 dB.","abstract_html":"As the MOSFET is scaled down, the lateral field across the device channel becomes comparable to, or even exceeds, the vertical field. The device can no longer be considered as operating under equilibrium condition, and the thermal noise theory is no longer applicable to predicting its performance. This work describes a new noise formulation that takes into account high-field effects by using the concept of unrelaxable drifting dipoles. The proposed noise model is verified for single devices as well as for integrated circuits. Excellent fitting results are achieved for the measured noise parameters of single 120-nm MOSFETs. For circuit validation, two high-performance low-noise amplifiers (LNA) have been demonstrated. The 3.1--10.6 GHz Ultra Wideband LNA shows very low noise figures NF of 3.5 to 4.3 dB as well as superior input-referred third-order interception points IIP 3 of 3.5 to 5.2 dBm across the design bandwidth. The other circuit, a 24-GHz LNA, achieves a gain of 19 dB, the highest gain published to date at this frequency band, while maintaining a comparative noise figure NF of 3.8 dB.","abstract_has_math":false,"creators":["Nguyen, Giang Dong"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Feng, Milton","Chiu, Yun"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:09:47Z","date_published":"2015-09-25T20:09:47Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3406789"],"render_values":[{"text":"(MiAaPQ)AAI3406789","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81155","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton","Chiu, Yun"]},{"key":"dc:creator","label":"Author","values":["Nguyen, Giang Dong"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:09:47Z","10000-01-01","2009"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81155","(MiAaPQ)AAI3406789"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["As the MOSFET is scaled down, the lateral field across the device channel becomes comparable to, or even exceeds, the vertical field. The device can no longer be considered as operating under equilibrium condition, and the thermal noise theory is no longer applicable to predicting its performance. This work describes a new noise formulation that takes into account high-field effects by using the concept of unrelaxable drifting dipoles. The proposed noise model is verified for single devices as well as for integrated circuits. Excellent fitting results are achieved for the measured noise parameters of single 120-nm MOSFETs. For circuit validation, two high-performance low-noise amplifiers (LNA) have been demonstrated. The 3.1--10.6 GHz Ultra Wideband LNA shows very low noise figures NF of 3.5 to 4.3 dB as well as superior input-referred third-order interception points IIP 3 of 3.5 to 5.2 dBm across the design bandwidth. The other circuit, a 24-GHz LNA, achieves a gain of 19 dB, the highest gain published to date at this frequency band, while maintaining a comparative noise figure NF of 3.8 dB.","Made available in DSpace on 2015-09-25T20:09:47Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3406789.pdf: 2903734 bytes, checksum: 19ee48cf137a92457c2060a0e6bed60e (MD5) Previous issue date: 2009","Embargo set by: Seth Robbins for item 82436 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","76 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009."]},{"key":"dc:title","label":"Title","values":["Drifting -Dipole Noise Model of Nanometer MOSFETs for Radio Frequency Integrated Circuit Design"]}]}],"canonical_facts":{"dc:contributor":["Feng, Milton","Chiu, Yun"],"dc:creator":["Nguyen, Giang Dong"],"dc:date":["2015-09-25T20:09:47Z","10000-01-01","2009"],"dc:description":["As the MOSFET is scaled down, the lateral field across the device channel becomes comparable to, or even exceeds, the vertical field. The device can no longer be considered as operating under equilibrium condition, and the thermal noise theory is no longer applicable to predicting its performance. This work describes a new noise formulation that takes into account high-field effects by using the concept of unrelaxable drifting dipoles. The proposed noise model is verified for single devices as well as for integrated circuits. Excellent fitting results are achieved for the measured noise parameters of single 120-nm MOSFETs. For circuit validation, two high-performance low-noise amplifiers (LNA) have been demonstrated. The 3.1--10.6 GHz Ultra Wideband LNA shows very low noise figures NF of 3.5 to 4.3 dB as well as superior input-referred third-order interception points IIP 3 of 3.5 to 5.2 dBm across the design bandwidth. The other circuit, a 24-GHz LNA, achieves a gain of 19 dB, the highest gain published to date at this frequency band, while maintaining a comparative noise figure NF of 3.8 dB.","Made available in DSpace on 2015-09-25T20:09:47Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3406789.pdf: 2903734 bytes, checksum: 19ee48cf137a92457c2060a0e6bed60e (MD5) Previous issue date: 2009","Embargo set by: Seth Robbins for item 82436 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","76 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009."],"dc:identifier":["http://hdl.handle.net/2142/81155","(MiAaPQ)AAI3406789"],"dc:language":["eng"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Drifting -Dipole Noise Model of Nanometer MOSFETs for Radio Frequency Integrated Circuit Design"],"dc:type":["text"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:15Z"}