{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81074"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81074","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Gallium Nitride-Based HEMT Devices Modeling and Performance Characterization","abstract":"The AlGaN/GaN high electron mobility transistor (HEMT) is a promising candidate for microwave applications due to its high power and low noise characteristics at such frequencies. As a result of improved material growth and processing technologies, microwave power densities have been demonstrated in AlGaN/GaN HEMTs that are five to ten times greater than that of corresponding GaAs-based devices. These higher power densities will result in simplifying the design and fabrication of monolithic microwave integrated circuits (MMICs). Power AlGaN/GaN MMIC design requires large signal modeling of the device. In bottom-up modeling techniques, the large signal model is based on small signal models derived at different bias conditions. In addition, noise performance analyses also require the knowledge of the small signal model in order to extract the intrinsic noise parameters. In this work, a new small signal equivalent circuit model extraction procedure is presented. The device noise model is developed based on this small signal model. Although AlGaN/GaN HEMTs show excellent properties in power and noise applications, they are still not widely adopted in commercial applications due to the reliability issue. The trapping effect is studied in our work by electrical and thermal methods.","abstract_html":"The AlGaN/GaN high electron mobility transistor (HEMT) is a promising candidate for microwave applications due to its high power and low noise characteristics at such frequencies. As a result of improved material growth and processing technologies, microwave power densities have been demonstrated in AlGaN/GaN HEMTs that are five to ten times greater than that of corresponding GaAs-based devices. These higher power densities will result in simplifying the design and fabrication of monolithic microwave integrated circuits (MMICs). Power AlGaN/GaN MMIC design requires large signal modeling of the device. In bottom-up modeling techniques, the large signal model is based on small signal models derived at different bias conditions. In addition, noise performance analyses also require the knowledge of the small signal model in order to extract the intrinsic noise parameters. In this work, a new small signal equivalent circuit model extraction procedure is presented. The device noise model is developed based on this small signal model. Although AlGaN/GaN HEMTs show excellent properties in power and noise applications, they are still not widely adopted in commercial applications due to the reliability issue. The trapping effect is studied in our work by electrical and thermal methods.","abstract_has_math":false,"creators":["Chen, Guang"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Adesida, Ilesanmi"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:09:29Z","date_published":"2015-09-25T20:09:29Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3314742"],"render_values":[{"text":"(MiAaPQ)AAI3314742","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81074","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Adesida, Ilesanmi"]},{"key":"dc:creator","label":"Author","values":["Chen, Guang"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:09:29Z","10000-01-01","2008"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81074","(MiAaPQ)AAI3314742"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The AlGaN/GaN high electron mobility transistor (HEMT) is a promising candidate for microwave applications due to its high power and low noise characteristics at such frequencies. As a result of improved material growth and processing technologies, microwave power densities have been demonstrated in AlGaN/GaN HEMTs that are five to ten times greater than that of corresponding GaAs-based devices. These higher power densities will result in simplifying the design and fabrication of monolithic microwave integrated circuits (MMICs). Power AlGaN/GaN MMIC design requires large signal modeling of the device. In bottom-up modeling techniques, the large signal model is based on small signal models derived at different bias conditions. In addition, noise performance analyses also require the knowledge of the small signal model in order to extract the intrinsic noise parameters. In this work, a new small signal equivalent circuit model extraction procedure is presented. The device noise model is developed based on this small signal model. Although AlGaN/GaN HEMTs show excellent properties in power and noise applications, they are still not widely adopted in commercial applications due to the reliability issue. The trapping effect is studied in our work by electrical and thermal methods.","Made available in DSpace on 2015-09-25T20:09:29Z (GMT). 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As a result of improved material growth and processing technologies, microwave power densities have been demonstrated in AlGaN/GaN HEMTs that are five to ten times greater than that of corresponding GaAs-based devices. These higher power densities will result in simplifying the design and fabrication of monolithic microwave integrated circuits (MMICs). Power AlGaN/GaN MMIC design requires large signal modeling of the device. In bottom-up modeling techniques, the large signal model is based on small signal models derived at different bias conditions. In addition, noise performance analyses also require the knowledge of the small signal model in order to extract the intrinsic noise parameters. In this work, a new small signal equivalent circuit model extraction procedure is presented. The device noise model is developed based on this small signal model. Although AlGaN/GaN HEMTs show excellent properties in power and noise applications, they are still not widely adopted in commercial applications due to the reliability issue. The trapping effect is studied in our work by electrical and thermal methods.","Made available in DSpace on 2015-09-25T20:09:29Z (GMT). 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