{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/80884"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/80884","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Gallium Nitride-Based HEMTs for Microwave Power and Noise: Physics and Application","abstract":"AlGaN/GaN high electron mobility transistors (HEMTs) have shown promising high speed performance, both high microwave power and low microwave noise. In this dissertation, the millimeter-wave and microwave power performance and small signal and low noise microwave characteristics are investigated. The CW power performance at 20 GHz and 30 GHz of 0.25 mum x 100 mum AlGaN/GaN HEMTs grown by metal-organic chemical vapor deposition (MOCVD) on semi-insulating SiC substrates is reported. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-mum gate-length devices at 20 GHz, and the 30 GHz results are among the highest power millimeter-wave power data published to date on GaN-based devices. This work also investigates the dependence of power performance on bias and temperature. The small signal performance on bias and temperature of GaN-based HEMTs are investigated via a systematic model extraction routine, and for the first time a fully monolithic AlGaN/GaN HEMT-based low noise amplifier (LNA) is reported. The monolithic microwave integrated circuit (MMIC) demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz. The MMIC was fabricated on layers grown by MOCVD on a silicon carbide substrate and employed a 0.25-mum x 150-mum AlGaN/GaN HEMT. These results demonstrate the potential for the integration of a robust low noise amplifier with an ultra-high performance power amplifier in a single GaN-based technology for next-generation military and communication systems.","abstract_html":"AlGaN/GaN high electron mobility transistors (HEMTs) have shown promising high speed performance, both high microwave power and low microwave noise. In this dissertation, the millimeter-wave and microwave power performance and small signal and low noise microwave characteristics are investigated. The CW power performance at 20 GHz and 30 GHz of 0.25 mum x 100 mum AlGaN/GaN HEMTs grown by metal-organic chemical vapor deposition (MOCVD) on semi-insulating SiC substrates is reported. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-mum gate-length devices at 20 GHz, and the 30 GHz results are among the highest power millimeter-wave power data published to date on GaN-based devices. This work also investigates the dependence of power performance on bias and temperature. The small signal performance on bias and temperature of GaN-based HEMTs are investigated via a systematic model extraction routine, and for the first time a fully monolithic AlGaN/GaN HEMT-based low noise amplifier (LNA) is reported. The monolithic microwave integrated circuit (MMIC) demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz. The MMIC was fabricated on layers grown by MOCVD on a silicon carbide substrate and employed a 0.25-mum x 150-mum AlGaN/GaN HEMT. These results demonstrate the potential for the integration of a robust low noise amplifier with an ultra-high performance power amplifier in a single GaN-based technology for next-generation military and communication systems.","abstract_has_math":false,"creators":["Schwindt, Randal Scott"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Adesida, Ilesanmi"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:08:38Z","date_published":"2015-09-25T20:08:38Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3153420"],"render_values":[{"text":"(MiAaPQ)AAI3153420","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/80884","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Adesida, Ilesanmi"]},{"key":"dc:creator","label":"Author","values":["Schwindt, Randal Scott"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:08:38Z","10000-01-01","2004"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/80884","(MiAaPQ)AAI3153420"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["AlGaN/GaN high electron mobility transistors (HEMTs) have shown promising high speed performance, both high microwave power and low microwave noise. In this dissertation, the millimeter-wave and microwave power performance and small signal and low noise microwave characteristics are investigated. The CW power performance at 20 GHz and 30 GHz of 0.25 mum x 100 mum AlGaN/GaN HEMTs grown by metal-organic chemical vapor deposition (MOCVD) on semi-insulating SiC substrates is reported. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-mum gate-length devices at 20 GHz, and the 30 GHz results are among the highest power millimeter-wave power data published to date on GaN-based devices. This work also investigates the dependence of power performance on bias and temperature. The small signal performance on bias and temperature of GaN-based HEMTs are investigated via a systematic model extraction routine, and for the first time a fully monolithic AlGaN/GaN HEMT-based low noise amplifier (LNA) is reported. The monolithic microwave integrated circuit (MMIC) demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz. The MMIC was fabricated on layers grown by MOCVD on a silicon carbide substrate and employed a 0.25-mum x 150-mum AlGaN/GaN HEMT. These results demonstrate the potential for the integration of a robust low noise amplifier with an ultra-high performance power amplifier in a single GaN-based technology for next-generation military and communication systems.","Made available in DSpace on 2015-09-25T20:08:38Z (GMT). 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In this dissertation, the millimeter-wave and microwave power performance and small signal and low noise microwave characteristics are investigated. The CW power performance at 20 GHz and 30 GHz of 0.25 mum x 100 mum AlGaN/GaN HEMTs grown by metal-organic chemical vapor deposition (MOCVD) on semi-insulating SiC substrates is reported. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-mum gate-length devices at 20 GHz, and the 30 GHz results are among the highest power millimeter-wave power data published to date on GaN-based devices. This work also investigates the dependence of power performance on bias and temperature. The small signal performance on bias and temperature of GaN-based HEMTs are investigated via a systematic model extraction routine, and for the first time a fully monolithic AlGaN/GaN HEMT-based low noise amplifier (LNA) is reported. The monolithic microwave integrated circuit (MMIC) demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz. The MMIC was fabricated on layers grown by MOCVD on a silicon carbide substrate and employed a 0.25-mum x 150-mum AlGaN/GaN HEMT. These results demonstrate the potential for the integration of a robust low noise amplifier with an ultra-high performance power amplifier in a single GaN-based technology for next-generation military and communication systems.","Made available in DSpace on 2015-09-25T20:08:38Z (GMT). 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