{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/80882"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/80882","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Photodetection in Silicon Pyramidal Microdischarges","abstract":"Photodetection in a silicon pyramidal microdischarge device has been observed. This hybrid plasma/semiconductor device was fabricated from standard silicon wafers using common integrated circuit, microfabrication techniques. The response of the devices to a 780-nm laser diode was shown to have an absolute photosensitivity of greater than 3.5 A/W. The absolute spectral response of the active plasma devices closely resembles the response of other silicon devices. The 100 x 100 mum devices exhibited a peak response of ∼2.0 A/W at 850 nm while the 50 x 50 mum devices showed a response of ∼3.6 A/W at 900 nm. Frequency response of the device was measured at >500 MHz using a 7--10 ns pulse from a 532-nm Nd:YAG laser. The results of the experiments culminated in the development of an explanation of the photodetection mechanism. The silicon electrode acts as a photocathode and converts incoming photons into electrons, which then undergo a multiplication in the plasma. The electron multiplication, measured during experiments, is greater than 3.","abstract_html":"Photodetection in a silicon pyramidal microdischarge device has been observed. This hybrid plasma/semiconductor device was fabricated from standard silicon wafers using common integrated circuit, microfabrication techniques. The response of the devices to a 780-nm laser diode was shown to have an absolute photosensitivity of greater than 3.5 A/W. The absolute spectral response of the active plasma devices closely resembles the response of other silicon devices. The 100 x 100 mum devices exhibited a peak response of ∼2.0 A/W at 850 nm while the 50 x 50 mum devices showed a response of ∼3.6 A/W at 900 nm. Frequency response of the device was measured at >500 MHz using a 7--10 ns pulse from a 532-nm Nd:YAG laser. The results of the experiments culminated in the development of an explanation of the photodetection mechanism. The silicon electrode acts as a photocathode and converts incoming photons into electrons, which then undergo a multiplication in the plasma. The electron multiplication, measured during experiments, is greater than 3.","abstract_has_math":false,"creators":["Ostrom, Nels Patrick"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["J. Gary Eden"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:08:38Z","date_published":"2015-09-25T20:08:38Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3153391"],"render_values":[{"text":"(MiAaPQ)AAI3153391","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/80882","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["J. 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