{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/80543"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/80543","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Novel Reactions on Halogen -Terminated Si(100)","abstract":"\"Finally, the initial stage of oxidation was studied for H2O-exposed Si(100) in the presence of Cl. Following H2O dissociation and saturation of the surface with Cl, a mild anneal allowed oxygen atoms to insert into Si dimer bonds. It was demonstrated that Cl allowed the bridge-bonded oxygen atoms to be imaged as a dark spot in the center of the dimer. The density of these \"\"split dimer\"\" defects correlated with the c-type defect density on the clean surface. These results also showed how to produce nearly defect free halogen-terminated Si(100).\"","abstract_html":""Finally, the initial stage of oxidation was studied for H2O-exposed Si(100) in the presence of Cl. Following H2O dissociation and saturation of the surface with Cl, a mild anneal allowed oxygen atoms to insert into Si dimer bonds. It was demonstrated that Cl allowed the bridge-bonded oxygen atoms to be imaged as a dark spot in the center of the dimer. The density of these ""split dimer"" defects correlated with the c-type defect density on the clean surface. These results also showed how to produce nearly defect free halogen-terminated Si(100)."","abstract_has_math":false,"creators":["Trenhaile, Brent Reid"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Weaver, John H."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:03:00Z","date_published":"2015-09-25T20:03:00Z","updated_at":"2026-07-22T22:26:14Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3250336"],"render_values":[{"text":"(MiAaPQ)AAI3250336","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/80543","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Weaver, John H."]},{"key":"dc:creator","label":"Author","values":["Trenhaile, Brent Reid"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:03:00Z","10000-01-01","2006"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/80543","(MiAaPQ)AAI3250336"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["\"Finally, the initial stage of oxidation was studied for H2O-exposed Si(100) in the presence of Cl. Following H2O dissociation and saturation of the surface with Cl, a mild anneal allowed oxygen atoms to insert into Si dimer bonds. It was demonstrated that Cl allowed the bridge-bonded oxygen atoms to be imaged as a dark spot in the center of the dimer. The density of these \"\"split dimer\"\" defects correlated with the c-type defect density on the clean surface. These results also showed how to produce nearly defect free halogen-terminated Si(100).\"","Made available in DSpace on 2015-09-25T20:03:00Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3250336.pdf: 1977262 bytes, checksum: a2e83ffc953cf183e355338e206ccdca (MD5) Previous issue date: 2006","Embargo set by: Seth Robbins for item 81825 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","85 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006."]},{"key":"dc:title","label":"Title","values":["Novel Reactions on Halogen -Terminated Si(100)"]}]}],"canonical_facts":{"dc:contributor":["Weaver, John H."],"dc:creator":["Trenhaile, Brent Reid"],"dc:date":["2015-09-25T20:03:00Z","10000-01-01","2006"],"dc:description":["\"Finally, the initial stage of oxidation was studied for H2O-exposed Si(100) in the presence of Cl. Following H2O dissociation and saturation of the surface with Cl, a mild anneal allowed oxygen atoms to insert into Si dimer bonds. It was demonstrated that Cl allowed the bridge-bonded oxygen atoms to be imaged as a dark spot in the center of the dimer. The density of these \"\"split dimer\"\" defects correlated with the c-type defect density on the clean surface. These results also showed how to produce nearly defect free halogen-terminated Si(100).\"","Made available in DSpace on 2015-09-25T20:03:00Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3250336.pdf: 1977262 bytes, checksum: a2e83ffc953cf183e355338e206ccdca (MD5) Previous issue date: 2006","Embargo set by: Seth Robbins for item 81825 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","85 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006."],"dc:identifier":["http://hdl.handle.net/2142/80543","(MiAaPQ)AAI3250336"],"dc:language":["eng"],"dc:subject":["Physics, Condensed Matter"],"dc:title":["Novel Reactions on Halogen -Terminated Si(100)"],"dc:type":["text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:14Z"}