{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/77406"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/77406","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Monte Carlo Calculations of Parallel and Perpendicular Electron Transport in Gallium-Arsenide Heterolayers","abstract":"Theoretical studies of transient and steady-state transport at low temperatures for electrons in GaAs single well heterojunction structures were performed. This work contains the most complete numerical study in terms of electronic states and scattering mechanisms for these important artificial semiconductor structures. Polar optical, acoustic phonon scattering (coupled by the deformation potential or piezoelectrically) and ionized impurity scattering are taken into consideration. The interaction of the electrons among themselves are also accounted for through the effect of plasmons and single pair collisions. All the rates are calculated using self-consistent envelope wave functions for up to 5 electronic subbands. Ensemble Monte Carlo simulations which incorporate electron-electron scattering and the effect of degeneracy are used to study the dynamics of the electrons for various values of the electric field. The dependence of the mobility on the value chosen for the deformation potential constant is shown. The results show that is screening of the acoustic phonons is taken into account, a good fit to experiments is obtained with a higher value for D than normally accepted in GaAs, but do not confirm other theoretical ideas such as scattering induced negative differential resistance.","abstract_html":"Theoretical studies of transient and steady-state transport at low temperatures for electrons in GaAs single well heterojunction structures were performed. This work contains the most complete numerical study in terms of electronic states and scattering mechanisms for these important artificial semiconductor structures. Polar optical, acoustic phonon scattering (coupled by the deformation potential or piezoelectrically) and ionized impurity scattering are taken into consideration. The interaction of the electrons among themselves are also accounted for through the effect of plasmons and single pair collisions. All the rates are calculated using self-consistent envelope wave functions for up to 5 electronic subbands. Ensemble Monte Carlo simulations which incorporate electron-electron scattering and the effect of degeneracy are used to study the dynamics of the electrons for various values of the electric field. The dependence of the mobility on the value chosen for the deformation potential constant is shown. The results show that is screening of the acoustic phonons is taken into account, a good fit to experiments is obtained with a higher value for D than normally accepted in GaAs, but do not confirm other theoretical ideas such as scattering induced negative differential resistance.","abstract_has_math":false,"creators":["Artaki, Michael Amedeu"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-05-13T15:41:56Z","date_published":"2015-05-13T15:41:56Z","updated_at":"2026-07-22T22:26:10Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8721576"],"render_values":[{"text":"(UMI)AAI8721576","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/77406","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Artaki, Michael Amedeu"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-05-13T15:41:56Z","10000-01-01","1987"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/77406","(UMI)AAI8721576"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Theoretical studies of transient and steady-state transport at low temperatures for electrons in GaAs single well heterojunction structures were performed. This work contains the most complete numerical study in terms of electronic states and scattering mechanisms for these important artificial semiconductor structures. Polar optical, acoustic phonon scattering (coupled by the deformation potential or piezoelectrically) and ionized impurity scattering are taken into consideration. The interaction of the electrons among themselves are also accounted for through the effect of plasmons and single pair collisions. All the rates are calculated using self-consistent envelope wave functions for up to 5 electronic subbands. Ensemble Monte Carlo simulations which incorporate electron-electron scattering and the effect of degeneracy are used to study the dynamics of the electrons for various values of the electric field. The dependence of the mobility on the value chosen for the deformation potential constant is shown. The results show that is screening of the acoustic phonons is taken into account, a good fit to experiments is obtained with a higher value for D than normally accepted in GaAs, but do not confirm other theoretical ideas such as scattering induced negative differential resistance.","Perpendicular electron transport in GaAs/Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As superlattices is also investigated by means of steady-state Monte Carlo simulations. Collision broadening of the extended states is taken into account and its effect on the transport parameters is assessed.","Made available in DSpace on 2015-05-13T15:41:56Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 8721576.PDF: 2659972 bytes, checksum: 594533214cc8ae5ad53c4de393aa9859 (MD5) Previous issue date: 1987","Embargo set by: Seth Robbins for item 78617 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","94 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987."]},{"key":"dc:title","label":"Title","values":["Monte Carlo Calculations of Parallel and Perpendicular Electron Transport in Gallium-Arsenide Heterolayers"]}]}],"canonical_facts":{"dc:creator":["Artaki, Michael Amedeu"],"dc:date":["2015-05-13T15:41:56Z","10000-01-01","1987"],"dc:description":["Theoretical studies of transient and steady-state transport at low temperatures for electrons in GaAs single well heterojunction structures were performed. This work contains the most complete numerical study in terms of electronic states and scattering mechanisms for these important artificial semiconductor structures. Polar optical, acoustic phonon scattering (coupled by the deformation potential or piezoelectrically) and ionized impurity scattering are taken into consideration. The interaction of the electrons among themselves are also accounted for through the effect of plasmons and single pair collisions. All the rates are calculated using self-consistent envelope wave functions for up to 5 electronic subbands. Ensemble Monte Carlo simulations which incorporate electron-electron scattering and the effect of degeneracy are used to study the dynamics of the electrons for various values of the electric field. The dependence of the mobility on the value chosen for the deformation potential constant is shown. The results show that is screening of the acoustic phonons is taken into account, a good fit to experiments is obtained with a higher value for D than normally accepted in GaAs, but do not confirm other theoretical ideas such as scattering induced negative differential resistance.","Perpendicular electron transport in GaAs/Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As superlattices is also investigated by means of steady-state Monte Carlo simulations. Collision broadening of the extended states is taken into account and its effect on the transport parameters is assessed.","Made available in DSpace on 2015-05-13T15:41:56Z (GMT). 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