A Study of Electron Traps in Vapor Phase Epitaxial Gallium-Arsenide Grown in the Presence of Oxygen (Dlts, Deep Level Transient Spectroscopy, Semiconductors, Defects)
A detailed analysis of the measurement technique known as constant capacitance deep level transient spectroscopy is presented, which includes an accurate treatment of large and inhomogeneous defect densities, and which allows a precise determination of deep level concentrations and activation energies. The design and construction of the automated measurement apparatus are described, and the computer programs for the data acquisition and analysis are included.
University of Illinois - Urbana-Champaign
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University of Illinois at Urbana-Champaign