A Study of Electron Traps in Vapor Phase Epitaxial Gallium-Arsenide Grown in the Presence of Oxygen (Dlts, Deep Level Transient Spectroscopy, Semiconductors, Defects)
type: CreativeWork
description: A detailed analysis of the measurement technique known as constant capacitance deep level transient spectroscopy is presented, which includes an accurate treatment of large and inhomogeneous defect densities, and which allows a precise determination of deep level concentrations and activation energies. The design and construction of the automated measurement apparatus are described, and the computer programs for the data acquisition and analysis are included.
abstract: A detailed analysis of the measurement technique known as constant capacitance deep level transient spectroscopy is presented, which includes an accurate treatment of large and inhomogeneous defect densities, and which allows a precise determination of deep level concentrations and activation energies. The design and construction of the automated measurement apparatus are described, and the computer programs for the data acquisition and analysis are included.
author: Ruby, Douglas Scott W.
language: eng
keywords: Physics, Condensed Matter
date published: 2015-05-13T15:41:49Z
date modified: 2026-07-22T22:26:10Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/77386