{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/72143"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/72143","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Modeling of Charge Carrier Transport in Photoetching of Gallium Arsenide","abstract":"The process of wet photoelectrochemical etching of GaAs was investigated with a numerical model that calculated the potential, electron, and hole distributions in a selectively illuminated semiconductor. The transport mechanisms associated with the etching process were studied. The model used the Galerkin Finite Element Method to solve the Poisson equation for the potential and the species balance equations for holes and electrons in two dimensions. Each species balance equation included terms for generation, recombination, diffusion and migration. A technique was developed to examine the sensitivity of the distribution of holes, electrons and the potential to the problem parameters including the reaction rate constant, diffusion coefficient of hole and electrons, doping concentration, light intensity, wavelength, and the recombination length. The sensitivity analysis technique facilitated the identification of the parameters for which the behavior of this complex, nonlinearly coupled system is most sensitive.","abstract_html":"The process of wet photoelectrochemical etching of GaAs was investigated with a numerical model that calculated the potential, electron, and hole distributions in a selectively illuminated semiconductor. The transport mechanisms associated with the etching process were studied. The model used the Galerkin Finite Element Method to solve the Poisson equation for the potential and the species balance equations for holes and electrons in two dimensions. Each species balance equation included terms for generation, recombination, diffusion and migration. A technique was developed to examine the sensitivity of the distribution of holes, electrons and the potential to the problem parameters including the reaction rate constant, diffusion coefficient of hole and electrons, doping concentration, light intensity, wavelength, and the recombination length. The sensitivity analysis technique facilitated the identification of the parameters for which the behavior of this complex, nonlinearly coupled system is most sensitive.","abstract_has_math":false,"creators":["Mannheim, Edna"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Chemical Engineering","degree_department":null,"school":null,"contributors":["Alkire, Richard C."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-17T20:39:28Z","date_published":"2014-12-17T20:39:28Z","updated_at":"2026-07-22T22:26:06Z","subjects":["Engineering, Chemical","Physics, Electricity and Magnetism"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI9329108"],"render_values":[{"text":"(UMI)AAI9329108","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/72143","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Alkire, Richard C."]},{"key":"dc:creator","label":"Author","values":["Mannheim, Edna"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-17T20:39:28Z","10000-01-01","1993"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Chemical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Chemical","Physics, Electricity and Magnetism"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/72143","(UMI)AAI9329108"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The process of wet photoelectrochemical etching of GaAs was investigated with a numerical model that calculated the potential, electron, and hole distributions in a selectively illuminated semiconductor. The transport mechanisms associated with the etching process were studied. The model used the Galerkin Finite Element Method to solve the Poisson equation for the potential and the species balance equations for holes and electrons in two dimensions. Each species balance equation included terms for generation, recombination, diffusion and migration. A technique was developed to examine the sensitivity of the distribution of holes, electrons and the potential to the problem parameters including the reaction rate constant, diffusion coefficient of hole and electrons, doping concentration, light intensity, wavelength, and the recombination length. The sensitivity analysis technique facilitated the identification of the parameters for which the behavior of this complex, nonlinearly coupled system is most sensitive.","Made available in DSpace on 2014-12-17T20:39:28Z (GMT). No. of bitstreams: 1 9329108.pdf: 10228256 bytes, checksum: 85fdcad3743bee7684f0e482610e92c5 (MD5) Previous issue date: 1993","Embargo set by: Seth Robbins for item 72311 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","320 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993."]},{"key":"dc:title","label":"Title","values":["Modeling of Charge Carrier Transport in Photoetching of Gallium Arsenide"]}]}],"canonical_facts":{"dc:contributor":["Alkire, Richard C."],"dc:creator":["Mannheim, Edna"],"dc:date":["2014-12-17T20:39:28Z","10000-01-01","1993"],"dc:description":["The process of wet photoelectrochemical etching of GaAs was investigated with a numerical model that calculated the potential, electron, and hole distributions in a selectively illuminated semiconductor. The transport mechanisms associated with the etching process were studied. The model used the Galerkin Finite Element Method to solve the Poisson equation for the potential and the species balance equations for holes and electrons in two dimensions. Each species balance equation included terms for generation, recombination, diffusion and migration. A technique was developed to examine the sensitivity of the distribution of holes, electrons and the potential to the problem parameters including the reaction rate constant, diffusion coefficient of hole and electrons, doping concentration, light intensity, wavelength, and the recombination length. The sensitivity analysis technique facilitated the identification of the parameters for which the behavior of this complex, nonlinearly coupled system is most sensitive.","Made available in DSpace on 2014-12-17T20:39:28Z (GMT). No. of bitstreams: 1 9329108.pdf: 10228256 bytes, checksum: 85fdcad3743bee7684f0e482610e92c5 (MD5) Previous issue date: 1993","Embargo set by: Seth Robbins for item 72311 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","320 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993."],"dc:identifier":["http://hdl.handle.net/2142/72143","(UMI)AAI9329108"],"dc:subject":["Engineering, Chemical","Physics, Electricity and Magnetism"],"dc:title":["Modeling of Charge Carrier Transport in Photoetching of Gallium Arsenide"],"dc:type":["text"],"thesis:degree_discipline":["Chemical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:06Z"}