{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/71796"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/71796","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Low Energy Ion Bombardment Effects in Supersaturated Copper-Indium Alloys","abstract":"Scanning transmission electron microscopy and Auger electron spectroscopy were used to investigate the effects of low energy (200 - 3000 eV) Ar('+) ion bombardment of supersaturated Cu:In alloys. Ion bombardment always resulted in the preferential sputtering of In although for sample temperatures T(,s) (GREATERTHEQ) 250(DEGREES)C, In loss due to preferential sputtering was increasingly compensated by radiation-assisted surface segregation. Even at room temperature, however, the steady state In concentration in the altered layer during irradiation, while reduced, remained supersaturated and enhanced diffusion to ion bombardment-created point defect sinks resulted in the volume precipitation of randomly dispersed In-rich (delta) phase ((TURN) 30at%In) particles in the near-surface region. Thermally induced precipitates, on the other hand, nucleated only at grain boundaries and were only observed at T(,s) (GREATERTHEQ) 250(DEGREES)C. The average size and number density of radiation-induced precipitates increased with increasing ion bombardment energy E(,i). Upon termination of ion bombardment at T(,s) (GREATERTHEQ) 250(DEGREES)C, the In surface concentration always returned to (TURN) 30at%. The recovery time for this process decreased with increasing T(,s) and E(,i) due to fast diffusion through near-surface regions containing residual damage such as dislocation loops. The measured widths of the compositionally altered layers were on the order of the ion penetration range.","abstract_html":"Scanning transmission electron microscopy and Auger electron spectroscopy were used to investigate the effects of low energy (200 - 3000 eV) Ar('+) ion bombardment of supersaturated Cu:In alloys. Ion bombardment always resulted in the preferential sputtering of In although for sample temperatures T(,s) (GREATERTHEQ) 250(DEGREES)C, In loss due to preferential sputtering was increasingly compensated by radiation-assisted surface segregation. Even at room temperature, however, the steady state In concentration in the altered layer during irradiation, while reduced, remained supersaturated and enhanced diffusion to ion bombardment-created point defect sinks resulted in the volume precipitation of randomly dispersed In-rich (delta) phase ((TURN) 30at%In) particles in the near-surface region. Thermally induced precipitates, on the other hand, nucleated only at grain boundaries and were only observed at T(,s) (GREATERTHEQ) 250(DEGREES)C. The average size and number density of radiation-induced precipitates increased with increasing ion bombardment energy E(,i). Upon termination of ion bombardment at T(,s) (GREATERTHEQ) 250(DEGREES)C, the In surface concentration always returned to (TURN) 30at%. The recovery time for this process decreased with increasing T(,s) and E(,i) due to fast diffusion through near-surface regions containing residual damage such as dislocation loops. The measured widths of the compositionally altered layers were on the order of the ion penetration range.","abstract_has_math":false,"creators":["Rivaud, Lydia"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Metallurgical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-16T20:51:49Z","date_published":"2014-12-16T20:51:49Z","updated_at":"2026-07-22T22:26:05Z","subjects":["Physics, Radiation"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8302971"],"render_values":[{"text":"(UMI)AAI8302971","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/71796","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Rivaud, Lydia"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-16T20:51:49Z","10000-01-01","1982"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Metallurgical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Radiation"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/71796","(UMI)AAI8302971"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Scanning transmission electron microscopy and Auger electron spectroscopy were used to investigate the effects of low energy (200 - 3000 eV) Ar('+) ion bombardment of supersaturated Cu:In alloys. Ion bombardment always resulted in the preferential sputtering of In although for sample temperatures T(,s) (GREATERTHEQ) 250(DEGREES)C, In loss due to preferential sputtering was increasingly compensated by radiation-assisted surface segregation. Even at room temperature, however, the steady state In concentration in the altered layer during irradiation, while reduced, remained supersaturated and enhanced diffusion to ion bombardment-created point defect sinks resulted in the volume precipitation of randomly dispersed In-rich (delta) phase ((TURN) 30at%In) particles in the near-surface region. Thermally induced precipitates, on the other hand, nucleated only at grain boundaries and were only observed at T(,s) (GREATERTHEQ) 250(DEGREES)C. The average size and number density of radiation-induced precipitates increased with increasing ion bombardment energy E(,i). Upon termination of ion bombardment at T(,s) (GREATERTHEQ) 250(DEGREES)C, the In surface concentration always returned to (TURN) 30at%. The recovery time for this process decreased with increasing T(,s) and E(,i) due to fast diffusion through near-surface regions containing residual damage such as dislocation loops. The measured widths of the compositionally altered layers were on the order of the ion penetration range.","Made available in DSpace on 2014-12-16T20:51:49Z (GMT). No. of bitstreams: 1 8302971.pdf: 2305701 bytes, checksum: 2c4c9d1983a58e3168bd23747b6895f1 (MD5) Previous issue date: 1982","Embargo set by: Seth Robbins for item 71962 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","78 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1982."]},{"key":"dc:title","label":"Title","values":["Low Energy Ion Bombardment Effects in Supersaturated Copper-Indium Alloys"]}]}],"canonical_facts":{"dc:creator":["Rivaud, Lydia"],"dc:date":["2014-12-16T20:51:49Z","10000-01-01","1982"],"dc:description":["Scanning transmission electron microscopy and Auger electron spectroscopy were used to investigate the effects of low energy (200 - 3000 eV) Ar('+) ion bombardment of supersaturated Cu:In alloys. Ion bombardment always resulted in the preferential sputtering of In although for sample temperatures T(,s) (GREATERTHEQ) 250(DEGREES)C, In loss due to preferential sputtering was increasingly compensated by radiation-assisted surface segregation. Even at room temperature, however, the steady state In concentration in the altered layer during irradiation, while reduced, remained supersaturated and enhanced diffusion to ion bombardment-created point defect sinks resulted in the volume precipitation of randomly dispersed In-rich (delta) phase ((TURN) 30at%In) particles in the near-surface region. Thermally induced precipitates, on the other hand, nucleated only at grain boundaries and were only observed at T(,s) (GREATERTHEQ) 250(DEGREES)C. The average size and number density of radiation-induced precipitates increased with increasing ion bombardment energy E(,i). Upon termination of ion bombardment at T(,s) (GREATERTHEQ) 250(DEGREES)C, the In surface concentration always returned to (TURN) 30at%. The recovery time for this process decreased with increasing T(,s) and E(,i) due to fast diffusion through near-surface regions containing residual damage such as dislocation loops. The measured widths of the compositionally altered layers were on the order of the ion penetration range.","Made available in DSpace on 2014-12-16T20:51:49Z (GMT). No. of bitstreams: 1 8302971.pdf: 2305701 bytes, checksum: 2c4c9d1983a58e3168bd23747b6895f1 (MD5) Previous issue date: 1982","Embargo set by: Seth Robbins for item 71962 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","78 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1982."],"dc:identifier":["http://hdl.handle.net/2142/71796","(UMI)AAI8302971"],"dc:subject":["Physics, Radiation"],"dc:title":["Low Energy Ion Bombardment Effects in Supersaturated Copper-Indium Alloys"],"dc:type":["text"],"thesis:degree_discipline":["Metallurgical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:05Z"}