{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/71791"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/71791","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Optical Spectroscopy Studies of the Reactive Ion Etching of Silicon and Gallium-Arsenide in Halomethane-Based Discharges","abstract":"The Reactive Ion Etching (RIE) behavior of Si and GaAs in d.c. halomethane-based discharges has been investigated using Glow Discharge Optical Spectroscopy in both emission and absorption modes. The etching of GaAs was found to be anisotropic and a carbon layer formed on the etched surfaces. A post etch in-situ surface analysis technique was developed to measure the functional dependence of etching parameters on the carbon surface layer which forms during RIE. A model was formulated which related the carbon coverage thickness to the fraction of incident halide atoms which actually assist in etching the target material. Using this model one can identify two modes of etching behavior: etchant surface unsaturated and saturated. The RIE of Si is an example of the former, while the RIE of GaAs in fluorinated discharges operates in an etchant saturated mode and proceeds through the ion assisted desorption of otherwise nonvolatile gallium fluoride.","abstract_html":"The Reactive Ion Etching (RIE) behavior of Si and GaAs in d.c. halomethane-based discharges has been investigated using Glow Discharge Optical Spectroscopy in both emission and absorption modes. The etching of GaAs was found to be anisotropic and a carbon layer formed on the etched surfaces. A post etch in-situ surface analysis technique was developed to measure the functional dependence of etching parameters on the carbon surface layer which forms during RIE. A model was formulated which related the carbon coverage thickness to the fraction of incident halide atoms which actually assist in etching the target material. Using this model one can identify two modes of etching behavior: etchant surface unsaturated and saturated. The RIE of Si is an example of the former, while the RIE of GaAs in fluorinated discharges operates in an etchant saturated mode and proceeds through the ion assisted desorption of otherwise nonvolatile gallium fluoride.","abstract_has_math":false,"creators":["Klinger, Robert Edward"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Metallurgical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-16T20:51:47Z","date_published":"2014-12-16T20:51:47Z","updated_at":"2026-07-22T22:26:05Z","subjects":["Engineering, Materials Science"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8209597"],"render_values":[{"text":"(UMI)AAI8209597","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/71791","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Klinger, Robert Edward"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-16T20:51:47Z","10000-01-01","1982"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Metallurgical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/71791","(UMI)AAI8209597"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The Reactive Ion Etching (RIE) behavior of Si and GaAs in d.c. halomethane-based discharges has been investigated using Glow Discharge Optical Spectroscopy in both emission and absorption modes. The etching of GaAs was found to be anisotropic and a carbon layer formed on the etched surfaces. A post etch in-situ surface analysis technique was developed to measure the functional dependence of etching parameters on the carbon surface layer which forms during RIE. A model was formulated which related the carbon coverage thickness to the fraction of incident halide atoms which actually assist in etching the target material. Using this model one can identify two modes of etching behavior: etchant surface unsaturated and saturated. The RIE of Si is an example of the former, while the RIE of GaAs in fluorinated discharges operates in an etchant saturated mode and proceeds through the ion assisted desorption of otherwise nonvolatile gallium fluoride.","Made available in DSpace on 2014-12-16T20:51:47Z (GMT). No. of bitstreams: 1 8209597.pdf: 4406517 bytes, checksum: f58e12e0427445071eb7dfec6b4cbd67 (MD5) Previous issue date: 1982","Embargo set by: Seth Robbins for item 71957 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","129 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1982."]},{"key":"dc:title","label":"Title","values":["Optical Spectroscopy Studies of the Reactive Ion Etching of Silicon and Gallium-Arsenide in Halomethane-Based Discharges"]}]}],"canonical_facts":{"dc:creator":["Klinger, Robert Edward"],"dc:date":["2014-12-16T20:51:47Z","10000-01-01","1982"],"dc:description":["The Reactive Ion Etching (RIE) behavior of Si and GaAs in d.c. halomethane-based discharges has been investigated using Glow Discharge Optical Spectroscopy in both emission and absorption modes. The etching of GaAs was found to be anisotropic and a carbon layer formed on the etched surfaces. A post etch in-situ surface analysis technique was developed to measure the functional dependence of etching parameters on the carbon surface layer which forms during RIE. A model was formulated which related the carbon coverage thickness to the fraction of incident halide atoms which actually assist in etching the target material. Using this model one can identify two modes of etching behavior: etchant surface unsaturated and saturated. The RIE of Si is an example of the former, while the RIE of GaAs in fluorinated discharges operates in an etchant saturated mode and proceeds through the ion assisted desorption of otherwise nonvolatile gallium fluoride.","Made available in DSpace on 2014-12-16T20:51:47Z (GMT). No. of bitstreams: 1 8209597.pdf: 4406517 bytes, checksum: f58e12e0427445071eb7dfec6b4cbd67 (MD5) Previous issue date: 1982","Embargo set by: Seth Robbins for item 71957 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","129 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1982."],"dc:identifier":["http://hdl.handle.net/2142/71791","(UMI)AAI8209597"],"dc:subject":["Engineering, Materials Science"],"dc:title":["Optical Spectroscopy Studies of the Reactive Ion Etching of Silicon and Gallium-Arsenide in Halomethane-Based Discharges"],"dc:type":["text"],"thesis:degree_discipline":["Metallurgical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:05Z"}