An Experimental Study of Impact Ionization in Compound Semiconductors
type: CreativeWork
description: Impact ionization coefficients are important parameters for the understanding of high field transport in semiconductors. Previous experimental data on impact ionization coefficients have indicated that the bandstructure can have a strong influence on the impact ionization process. In this thesis, the effects of crystallographic orientation, composition and temperature on impact ionization are reported for measurements done on InP, Al$\sb{\rm x}$Ga$\sb{\rm1-x}$As and GaAs, respectively.
abstract: Impact ionization coefficients are important parameters for the understanding of high field transport in semiconductors. Previous experimental data on impact ionization coefficients have indicated that the bandstructure can have a strong influence on the impact ionization process. In this thesis, the effects of crystallographic orientation, composition and temperature on impact ionization are reported for measurements done on InP, Al$\sb{\rm x}$Ga$\sb{\rm1-x}$As and GaAs, respectively.
author: Robbins, Virginia MacKay
keywords: Engineering, Electronics and Electrical
date published: 2014-12-15T19:05:31Z
date modified: 2026-07-22T22:26:00Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/69388