An Experimental Study of Impact Ionization in Compound Semiconductors
Impact ionization coefficients are important parameters for the understanding of high field transport in semiconductors. Previous experimental data on impact ionization coefficients have indicated that the bandstructure can have a strong influence on the impact ionization process. In this thesis, the effects of crystallographic orientation, composition and temperature on impact ionization are reported for measurements done on InP, Al$\sb{\rm x}$Ga$\sb{\rm1-x}$As and GaAs, respectively.
University of Illinois - Urbana-Champaign
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University of Illinois at Urbana-Champaign