Theoretical Studies of High Energy Transport of Electrons and Holes in Gallium-Arsenide, Indium-Phosphide, Indium-Arsenide, and Gallium-Antimonide (Semiconductors, Monte Carlo, Impact Ionization)
In this thesis, the high field behavior of both electrons and holes is studied using a Monte Carlo calculation including a complete band structure. The Monte Carlo method is particularly useful since it can be applied to both steady state and transient problems.
University of Illinois - Urbana-Champaign
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University of Illinois at Urbana-Champaign