Theoretical Studies of High Energy Transport of Electrons and Holes in Gallium-Arsenide, Indium-Phosphide, Indium-Arsenide, and Gallium-Antimonide (Semiconductors, Monte Carlo, Impact Ionization)
type: CreativeWork
description: In this thesis, the high field behavior of both electrons and holes is studied using a Monte Carlo calculation including a complete band structure. The Monte Carlo method is particularly useful since it can be applied to both steady state and transient problems.
abstract: In this thesis, the high field behavior of both electrons and holes is studied using a Monte Carlo calculation including a complete band structure. The Monte Carlo method is particularly useful since it can be applied to both steady state and transient problems.
author: Brennan, Kevin Francis
keywords: Engineering, Electronics and Electrical
date published: 2014-12-15T19:04:43Z
date modified: 2026-07-22T22:26:00Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/69281