{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/66256"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/66256","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Dynamic Characteristics of Aluminum-Gallium - Arsenide - Gallium-Arsenideconventional and Quantum-Well Double-Heterostructure Laser Diodes","abstract":"The dynamic characteristics of Al(,x)Ga(,1-x)As-GaAs conventional and quantum-well double-heterostructure laser diodes were investigated.","abstract_html":"The dynamic characteristics of Al(,x)Ga(,1-x)As-GaAs conventional and quantum-well double-heterostructure laser diodes were investigated.","abstract_has_math":false,"creators":["Anderson, Eric Rune"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-12T20:55:25Z","date_published":"2014-12-12T20:55:25Z","updated_at":"2026-07-22T22:25:55Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8203394"],"render_values":[{"text":"(UMI)AAI8203394","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/66256","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Anderson, Eric Rune"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-12T20:55:25Z","10000-01-01","1981"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/66256","(UMI)AAI8203394"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The dynamic characteristics of Al(,x)Ga(,1-x)As-GaAs conventional and quantum-well double-heterostructure laser diodes were investigated.","Spontaneous carrier lifetimes of 2.0 to 2.5 nanoseconds were determined for conventional double-heterostructure laser diodes grown by metalorganic chemical vapor deposition (MO-CVD). Photon lifetimes also were determined in two different ways--by measuring the variation of the period of the damped relaxation oscillation with current and by measuring the variation of the intrinsic quantum noise resonance with direct current. Values of 0.6 picosecond and 0.7 picosecond were obtained by these two techniques, respectively.","Transient and noise measurements were made on Al(,x)Ga(,1-x)As-GaAs single- and multiple-quantum-well double-heterostructure laser diodes grown by metalorganic chemical vapor deposition (MO-CVD). In pulse operation, these lasers did not exhibit damped relaxation oscillations, and under direct current excitation, the quantum noise resonance was much less than that of standard conventional double-heterostructure laser diodes of comparable stripe widths.","Active mode locking was performed on standard proton-bombarded stripe Al(,x)Ga(,1-x)As-GaAs double-heterostructure laser diodes grown by liquid phase epitaxy. Mode locking was also performed on single-mode self-aligned Al(,x)Ga(,1-x)As-GaAs double-heterostructure laser diodes and multiple-quantum-well double-heterostructure laser diodes both grown by metalorganic chemical vapor deposition. The proton-bombarded stripe lasers produced the shortest mode-locked pulses which were 20-30 picoseconds wide. The single-mode self-aligned lasers produced wider mode-locked pulses, 40-50 picoseconds wide, than the proton-bombarded stripe lasers. Little or no mode locking was observed with the multiple-quantum-well lasers.","Made available in DSpace on 2014-12-12T20:55:25Z (GMT). No. of bitstreams: 1 8203394.pdf: 2297697 bytes, checksum: 9bd89b369465d44d518b66e6e2a20d1e (MD5) Previous issue date: 1981","Embargo set by: Seth Robbins for item 66435 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","86 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981."]},{"key":"dc:title","label":"Title","values":["Dynamic Characteristics of Aluminum-Gallium - Arsenide - Gallium-Arsenideconventional and Quantum-Well Double-Heterostructure Laser Diodes"]}]}],"canonical_facts":{"dc:creator":["Anderson, Eric Rune"],"dc:date":["2014-12-12T20:55:25Z","10000-01-01","1981"],"dc:description":["The dynamic characteristics of Al(,x)Ga(,1-x)As-GaAs conventional and quantum-well double-heterostructure laser diodes were investigated.","Spontaneous carrier lifetimes of 2.0 to 2.5 nanoseconds were determined for conventional double-heterostructure laser diodes grown by metalorganic chemical vapor deposition (MO-CVD). Photon lifetimes also were determined in two different ways--by measuring the variation of the period of the damped relaxation oscillation with current and by measuring the variation of the intrinsic quantum noise resonance with direct current. Values of 0.6 picosecond and 0.7 picosecond were obtained by these two techniques, respectively.","Transient and noise measurements were made on Al(,x)Ga(,1-x)As-GaAs single- and multiple-quantum-well double-heterostructure laser diodes grown by metalorganic chemical vapor deposition (MO-CVD). In pulse operation, these lasers did not exhibit damped relaxation oscillations, and under direct current excitation, the quantum noise resonance was much less than that of standard conventional double-heterostructure laser diodes of comparable stripe widths.","Active mode locking was performed on standard proton-bombarded stripe Al(,x)Ga(,1-x)As-GaAs double-heterostructure laser diodes grown by liquid phase epitaxy. Mode locking was also performed on single-mode self-aligned Al(,x)Ga(,1-x)As-GaAs double-heterostructure laser diodes and multiple-quantum-well double-heterostructure laser diodes both grown by metalorganic chemical vapor deposition. The proton-bombarded stripe lasers produced the shortest mode-locked pulses which were 20-30 picoseconds wide. The single-mode self-aligned lasers produced wider mode-locked pulses, 40-50 picoseconds wide, than the proton-bombarded stripe lasers. Little or no mode locking was observed with the multiple-quantum-well lasers.","Made available in DSpace on 2014-12-12T20:55:25Z (GMT). No. of bitstreams: 1 8203394.pdf: 2297697 bytes, checksum: 9bd89b369465d44d518b66e6e2a20d1e (MD5) Previous issue date: 1981","Embargo set by: Seth Robbins for item 66435 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","86 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981."],"dc:identifier":["http://hdl.handle.net/2142/66256","(UMI)AAI8203394"],"dc:language":["eng"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Dynamic Characteristics of Aluminum-Gallium - Arsenide - Gallium-Arsenideconventional and Quantum-Well Double-Heterostructure Laser Diodes"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:55Z"}