{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/66247"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/66247","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Phonon and Alloy-Clustering Effects in Aluminum Gallium Arsenide-Gallium Arsenide Quantum-Well Heterostructures","abstract":"Phonon and alloy-clustering effects in the luminescence characteristics of Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructures (QWH) are studied. In the form of a QWH, GaAs is shown to lase over a (TURN)0.5 eV energy range between (TURN)E(,g) (GaAs)-36 meV and (TURN)E(,g)(GaAs)+445 meV.","abstract_html":"Phonon and alloy-clustering effects in the luminescence characteristics of Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructures (QWH) are studied. In the form of a QWH, GaAs is shown to lase over a (TURN)0.5 eV energy range between (TURN)E(,g) (GaAs)-36 meV and (TURN)E(,g)(GaAs)+445 meV.","abstract_has_math":false,"creators":["Vojak, Bruce Arthur"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-12T20:55:20Z","date_published":"2014-12-12T20:55:20Z","updated_at":"2026-07-22T22:25:55Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8114493"],"render_values":[{"text":"(UMI)AAI8114493","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/66247","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Vojak, Bruce Arthur"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-12T20:55:20Z","10000-01-01","1981"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/66247","(UMI)AAI8114493"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Phonon and alloy-clustering effects in the luminescence characteristics of Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructures (QWH) are studied. In the form of a QWH, GaAs is shown to lase over a (TURN)0.5 eV energy range between (TURN)E(,g) (GaAs)-36 meV and (TURN)E(,g)(GaAs)+445 meV.","Phonon-sideband laser operation at energies below E(,g)(GaAs) is induced in undoped GaAs layers (L(,z) (TURN)200-500 (ANGSTROM)) that, on their own, do not lase at 77 K at E < E(,g)(GaAs). Induced phonon-sideband laser operation is used to obtain a measurement of the LO-phonon energy in GaAs of (H/2PI)(omega)(,LO)(DBLTURN)36.1 meV. The contribution of LO phonons, emitted during the process of carrier thermalization from the wide-gap Al(,x)Ga(,1-x)As confining layers to the narrow-gap active region, to QWH and double heterostructure laser operation is confirmed.","Alloy clustering in thin Al(,x)Ga(,1-x)As (x < 1) barrier layers is observed to contribute to spontaneous and stimulated emission in the energy range between E(,g)(GaAs) and the lowest energy confined-carrier transition of an ideal QWH. For Al(,x)Ga(,1-x)As layers grown by the metalorganic-chemical vapor deposition process, and Al-Ga cluster size of (TURN)40 (ANGSTROM) is estimated. The substitution of cluster-free, binary AlAs layers for the Al(,x)Ga(,1-x)As barriers eliminates alloy clustering and results in high-energy, narrow-linewidth spontaneous and stimulated emission from a QWH. Visible-red laser operation as high as 445 meV (77 K) and 400 meV (300 K) above E(,g)(GaAs) is observed from a QWH with an AlAs-GaAs cluster-free active region.","Made available in DSpace on 2014-12-12T20:55:20Z (GMT). No. of bitstreams: 1 8114493.pdf: 3063019 bytes, checksum: 83f13cbb448f639f2f8b26995d69184f (MD5) Previous issue date: 1981","Embargo set by: Seth Robbins for item 66426 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","111 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981."]},{"key":"dc:title","label":"Title","values":["Phonon and Alloy-Clustering Effects in Aluminum Gallium Arsenide-Gallium Arsenide Quantum-Well Heterostructures"]}]}],"canonical_facts":{"dc:creator":["Vojak, Bruce Arthur"],"dc:date":["2014-12-12T20:55:20Z","10000-01-01","1981"],"dc:description":["Phonon and alloy-clustering effects in the luminescence characteristics of Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructures (QWH) are studied. In the form of a QWH, GaAs is shown to lase over a (TURN)0.5 eV energy range between (TURN)E(,g) (GaAs)-36 meV and (TURN)E(,g)(GaAs)+445 meV.","Phonon-sideband laser operation at energies below E(,g)(GaAs) is induced in undoped GaAs layers (L(,z) (TURN)200-500 (ANGSTROM)) that, on their own, do not lase at 77 K at E < E(,g)(GaAs). Induced phonon-sideband laser operation is used to obtain a measurement of the LO-phonon energy in GaAs of (H/2PI)(omega)(,LO)(DBLTURN)36.1 meV. The contribution of LO phonons, emitted during the process of carrier thermalization from the wide-gap Al(,x)Ga(,1-x)As confining layers to the narrow-gap active region, to QWH and double heterostructure laser operation is confirmed.","Alloy clustering in thin Al(,x)Ga(,1-x)As (x < 1) barrier layers is observed to contribute to spontaneous and stimulated emission in the energy range between E(,g)(GaAs) and the lowest energy confined-carrier transition of an ideal QWH. For Al(,x)Ga(,1-x)As layers grown by the metalorganic-chemical vapor deposition process, and Al-Ga cluster size of (TURN)40 (ANGSTROM) is estimated. The substitution of cluster-free, binary AlAs layers for the Al(,x)Ga(,1-x)As barriers eliminates alloy clustering and results in high-energy, narrow-linewidth spontaneous and stimulated emission from a QWH. Visible-red laser operation as high as 445 meV (77 K) and 400 meV (300 K) above E(,g)(GaAs) is observed from a QWH with an AlAs-GaAs cluster-free active region.","Made available in DSpace on 2014-12-12T20:55:20Z (GMT). No. of bitstreams: 1 8114493.pdf: 3063019 bytes, checksum: 83f13cbb448f639f2f8b26995d69184f (MD5) Previous issue date: 1981","Embargo set by: Seth Robbins for item 66426 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","111 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981."],"dc:identifier":["http://hdl.handle.net/2142/66247","(UMI)AAI8114493"],"dc:language":["eng"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Phonon and Alloy-Clustering Effects in Aluminum Gallium Arsenide-Gallium Arsenide Quantum-Well Heterostructures"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:55Z"}