{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/66227"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/66227","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Visible-Spectrum Indium Gallium Phosphide Arsenide Heterostructure Lasers","abstract":"The growth, fabrication and luminescence characteristics of wide-gap In(,1-x)Ga(,x)P(,1-z)As(,z) double heterojunction lasers and of single and multiple quantum-well lasers are examined.","abstract_html":"The growth, fabrication and luminescence characteristics of wide-gap In(,1-x)Ga(,x)P(,1-z)As(,z) double heterojunction lasers and of single and multiple quantum-well lasers are examined.","abstract_has_math":false,"creators":["Chin, Raymond"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-12T20:55:11Z","date_published":"2014-12-12T20:55:11Z","updated_at":"2026-07-22T22:25:55Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8017921"],"render_values":[{"text":"(UMI)AAI8017921","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/66227","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Chin, Raymond"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-12T20:55:11Z","10000-01-01","1980"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/66227","(UMI)AAI8017921"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The growth, fabrication and luminescence characteristics of wide-gap In(,1-x)Ga(,x)P(,1-z)As(,z) double heterojunction lasers and of single and multiple quantum-well lasers are examined.","The problems related to the substrate GaAs(,1-y)P(,y) used in visible laser diode work such as surface cross-hatch structure (misfit dislocations) and lattice parameters (a(,o)) variation are examined. Comparisons are made between the active layers of DH structures grown from Ga-rich melts and high-arsenic concentration In-rich melts. The specific difficulties related to each melt type are discussed, as well as growth temperature effects. The effects of lattice-mismatch between the GaAs(,1-y)P(,y) substrate and the In(,1-x)Ga(,x)P epitaxial layers are studied, providing correlations between the photoluminescence intensity, surface features and lattice-mismatch.","Data are presented for various visible-spectrum double heterojunction lasers with different heterobarrier heights. It is shown that 300 K pulsed operation of visible-spectrum laser diodes with J(,th) (TURN)2 x 10('4)A/cm('2) at (lamda)(TURN)6475 (ANGSTROM) and 77 K CW operation with J(,th) (TURN)600A/cm('2) at (lamda)(TURN)6280 (ANGSTROM) is possible. Limitations upon the compositions which can be employed in DH lasers are discussed in terms of the direct-indirect transition.","Finally, preliminary results from single- and multiple quantum-well lasers with high energy gaps (E(,g) > 1.9 eV) are examined, as well as the method of growing them. Data from these structures showing band filling and stimulated emission shifted below the quantum states are presented.","Made available in DSpace on 2014-12-12T20:55:11Z (GMT). No. of bitstreams: 1 8017921.pdf: 3326342 bytes, checksum: f25309ccab031b67cd3962df54eabb60 (MD5) Previous issue date: 1980","Embargo set by: Seth Robbins for item 66406 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","124 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980."]},{"key":"dc:title","label":"Title","values":["Visible-Spectrum Indium Gallium Phosphide Arsenide Heterostructure Lasers"]}]}],"canonical_facts":{"dc:creator":["Chin, Raymond"],"dc:date":["2014-12-12T20:55:11Z","10000-01-01","1980"],"dc:description":["The growth, fabrication and luminescence characteristics of wide-gap In(,1-x)Ga(,x)P(,1-z)As(,z) double heterojunction lasers and of single and multiple quantum-well lasers are examined.","The problems related to the substrate GaAs(,1-y)P(,y) used in visible laser diode work such as surface cross-hatch structure (misfit dislocations) and lattice parameters (a(,o)) variation are examined. Comparisons are made between the active layers of DH structures grown from Ga-rich melts and high-arsenic concentration In-rich melts. The specific difficulties related to each melt type are discussed, as well as growth temperature effects. The effects of lattice-mismatch between the GaAs(,1-y)P(,y) substrate and the In(,1-x)Ga(,x)P epitaxial layers are studied, providing correlations between the photoluminescence intensity, surface features and lattice-mismatch.","Data are presented for various visible-spectrum double heterojunction lasers with different heterobarrier heights. It is shown that 300 K pulsed operation of visible-spectrum laser diodes with J(,th) (TURN)2 x 10('4)A/cm('2) at (lamda)(TURN)6475 (ANGSTROM) and 77 K CW operation with J(,th) (TURN)600A/cm('2) at (lamda)(TURN)6280 (ANGSTROM) is possible. Limitations upon the compositions which can be employed in DH lasers are discussed in terms of the direct-indirect transition.","Finally, preliminary results from single- and multiple quantum-well lasers with high energy gaps (E(,g) > 1.9 eV) are examined, as well as the method of growing them. Data from these structures showing band filling and stimulated emission shifted below the quantum states are presented.","Made available in DSpace on 2014-12-12T20:55:11Z (GMT). No. of bitstreams: 1 8017921.pdf: 3326342 bytes, checksum: f25309ccab031b67cd3962df54eabb60 (MD5) Previous issue date: 1980","Embargo set by: Seth Robbins for item 66406 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","124 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980."],"dc:identifier":["http://hdl.handle.net/2142/66227","(UMI)AAI8017921"],"dc:language":["eng"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Visible-Spectrum Indium Gallium Phosphide Arsenide Heterostructure Lasers"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:55Z"}