Growth and Characterization of Indium(1-X) Gallium(x) Arsenide(y) Phosphide(1-Y) for Near-Infrared Photodetectors
type: CreativeWork
description: Made available in DSpace on 2014-12-12T20:54:58Z (GMT). No. of bitstreams: 1 7915346.pdf: 4217797 bytes, checksum: 13131f9889a9d9e15e3417282513d841 (MD5) Previous issue date: 1979
abstract: Made available in DSpace on 2014-12-12T20:54:58Z (GMT). No. of bitstreams: 1 7915346.pdf: 4217797 bytes, checksum: 13131f9889a9d9e15e3417282513d841 (MD5) Previous issue date: 1979
author: Feng, Milton
language: eng
keywords: Engineering, Electronics and Electrical
date published: 2014-12-12T20:54:58Z
date modified: 2026-07-22T22:25:55Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/66196