{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/49833"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/49833","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Monolithic electronic-photonic integration of the light-emitting transistor","abstract":"Server technologies such as network storage, multi-core processing, video conference and mobile data are contributing to the ever increasing bandwidth requirement. It has become challenging to meet the demand for bandwidth, energy efficient and reliable optical interconnects. The development of an optical communication solution is broadened from the initial optical interconnect from server rack-to-rack solution to intra-chip connection. The light-emitting transistor (LET) has good potential as an optical signal source for both applications because of its tilted charge dynamic mechanism in the base terminal, which enables fast optical recombination lifetime. In 2003, Holonyak and Feng discovered the light-emitting transistor (LET) from their recognition that the transistor base recombination in a direct-gap (III-IV) material generates light related to the applied signal. The light-emitting transistor (LET) utilizes photon-generation from the base current in a heterojunction bipolar transistor (HBT) structure as an optical output that mirrors the collector electrical output. This discovery has realized a simple and efficient way for monolithic photonic-electronic integration. In addition, a novel hybrid-LET is designed to include the DC and AC regulator to give good impedance matching, high-speed optical modulation and low power. As the hybrid-LET is a compact one-chip solution with low operating power, it is an attractive solution for short haul interconnects. The work described in this thesis includes design and characterization of the hybrid-LET and monolithic opto-electronic integrated circuit OEIC using the LET.","abstract_html":"Server technologies such as network storage, multi-core processing, video conference and mobile data are contributing to the ever increasing bandwidth requirement. It has become challenging to meet the demand for bandwidth, energy efficient and reliable optical interconnects. The development of an optical communication solution is broadened from the initial optical interconnect from server rack-to-rack solution to intra-chip connection. The light-emitting transistor (LET) has good potential as an optical signal source for both applications because of its tilted charge dynamic mechanism in the base terminal, which enables fast optical recombination lifetime. In 2003, Holonyak and Feng discovered the light-emitting transistor (LET) from their recognition that the transistor base recombination in a direct-gap (III-IV) material generates light related to the applied signal. The light-emitting transistor (LET) utilizes photon-generation from the base current in a heterojunction bipolar transistor (HBT) structure as an optical output that mirrors the collector electrical output. This discovery has realized a simple and efficient way for monolithic photonic-electronic integration. In addition, a novel hybrid-LET is designed to include the DC and AC regulator to give good impedance matching, high-speed optical modulation and low power. As the hybrid-LET is a compact one-chip solution with low operating power, it is an attractive solution for short haul interconnects. The work described in this thesis includes design and characterization of the hybrid-LET and monolithic opto-electronic integrated circuit OEIC using the LET.","abstract_has_math":false,"creators":["Lam, Poh Lian"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Dallesasse, John M."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-05-30T17:20:05Z","date_published":"2014-05-30T17:20:05Z","updated_at":"2026-07-22T22:25:40Z","subjects":["Light-Emitting Transistor","Optical Bandwidth","Opto-electronic Integrated Circuits"],"languages":["en"],"rights":["Copyright 2014 Poh Lian Lam"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/49833","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Dallesasse, John M."]},{"key":"dc:creator","label":"Author","values":["Lam, Poh Lian"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-05-30T17:20:05Z","2016-09-22T20:59:28Z","2014-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Light-Emitting Transistor","Optical Bandwidth","Opto-electronic Integrated Circuits"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2014 Poh Lian Lam"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/49833"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Server technologies such as network storage, multi-core processing, video conference and mobile data are contributing to the ever increasing bandwidth requirement. It has become challenging to meet the demand for bandwidth, energy efficient and reliable optical interconnects. The development of an optical communication solution is broadened from the initial optical interconnect from server rack-to-rack solution to intra-chip connection. The light-emitting transistor (LET) has good potential as an optical signal source for both applications because of its tilted charge dynamic mechanism in the base terminal, which enables fast optical recombination lifetime. In 2003, Holonyak and Feng discovered the light-emitting transistor (LET) from their recognition that the transistor base recombination in a direct-gap (III-IV) material generates light related to the applied signal. The light-emitting transistor (LET) utilizes photon-generation from the base current in a heterojunction bipolar transistor (HBT) structure as an optical output that mirrors the collector electrical output. This discovery has realized a simple and efficient way for monolithic photonic-electronic integration. In addition, a novel hybrid-LET is designed to include the DC and AC regulator to give good impedance matching, high-speed optical modulation and low power. As the hybrid-LET is a compact one-chip solution with low operating power, it is an attractive solution for short haul interconnects. The work described in this thesis includes design and characterization of the hybrid-LET and monolithic opto-electronic integrated circuit OEIC using the LET.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2014-04-30T15:37:45Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Lam_Poh Lian.pdf: 2094845 bytes, checksum: 1394b56706387e2d41286146daedb52e (MD5)","Made available in DSpace on 2014-05-30T17:20:05Z (GMT). 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It has become challenging to meet the demand for bandwidth, energy efficient and reliable optical interconnects. The development of an optical communication solution is broadened from the initial optical interconnect from server rack-to-rack solution to intra-chip connection. The light-emitting transistor (LET) has good potential as an optical signal source for both applications because of its tilted charge dynamic mechanism in the base terminal, which enables fast optical recombination lifetime. In 2003, Holonyak and Feng discovered the light-emitting transistor (LET) from their recognition that the transistor base recombination in a direct-gap (III-IV) material generates light related to the applied signal. The light-emitting transistor (LET) utilizes photon-generation from the base current in a heterojunction bipolar transistor (HBT) structure as an optical output that mirrors the collector electrical output. This discovery has realized a simple and efficient way for monolithic photonic-electronic integration. In addition, a novel hybrid-LET is designed to include the DC and AC regulator to give good impedance matching, high-speed optical modulation and low power. As the hybrid-LET is a compact one-chip solution with low operating power, it is an attractive solution for short haul interconnects. The work described in this thesis includes design and characterization of the hybrid-LET and monolithic opto-electronic integrated circuit OEIC using the LET.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2014-04-30T15:37:45Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Lam_Poh Lian.pdf: 2094845 bytes, checksum: 1394b56706387e2d41286146daedb52e (MD5)","Made available in DSpace on 2014-05-30T17:20:05Z (GMT). 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