{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/49653"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/49653","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability","abstract":"Metal-assisted chemical etching (MacEtch), a wet etching method developed in 2000, has been the focus of extensive research in the area of semiconductor nanotechnology for the last decade, mainly in Si. In principle, MacEtch can be applicable to the other semiconductors if there exists a significant etch rate difference between the areas with and without the metal coverage. Due to this, MacEtch has recently attracted much attention in extending this technique to III-V semiconductors such as GaAs, GaN, and InP. This thesis demonstrates uniform array-based InP nanostructures with lateral dimensions as small as sub-20 nm using inverse metal-assisted chemical etching (I-MacEtch), a purely solution-based yet anisotropic etching method. The type and geometry of the metal catalyst as well as etchant ratio and concentration are explored to achieve various InP nanostructure features. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures can potentially enable an aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.","abstract_html":"Metal-assisted chemical etching (MacEtch), a wet etching method developed in 2000, has been the focus of extensive research in the area of semiconductor nanotechnology for the last decade, mainly in Si. In principle, MacEtch can be applicable to the other semiconductors if there exists a significant etch rate difference between the areas with and without the metal coverage. Due to this, MacEtch has recently attracted much attention in extending this technique to III-V semiconductors such as GaAs, GaN, and InP. This thesis demonstrates uniform array-based InP nanostructures with lateral dimensions as small as sub-20 nm using inverse metal-assisted chemical etching (I-MacEtch), a purely solution-based yet anisotropic etching method. The type and geometry of the metal catalyst as well as etchant ratio and concentration are explored to achieve various InP nanostructure features. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures can potentially enable an aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.","abstract_has_math":false,"creators":["Kim, Seung Hyun"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Li, Xiuling"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-05-30T17:03:06Z","date_published":"2014-05-30T17:03:06Z","updated_at":"2026-07-22T22:25:38Z","subjects":["Indium Phosphide (InP)","metal-assisted chemical etching (MacEtch)","nanowires","nanostructures"],"languages":["en"],"rights":["Copyright 2014 Seung Hyun Kim"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/49653","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Li, Xiuling"]},{"key":"dc:creator","label":"Author","values":["Kim, Seung Hyun"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-05-30T17:03:06Z","2016-09-22T20:59:19Z","2014-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Indium Phosphide (InP)","metal-assisted chemical etching (MacEtch)","nanowires","nanostructures"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2014 Seung Hyun Kim"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/49653"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Metal-assisted chemical etching (MacEtch), a wet etching method developed in 2000, has been the focus of extensive research in the area of semiconductor nanotechnology for the last decade, mainly in Si. In principle, MacEtch can be applicable to the other semiconductors if there exists a significant etch rate difference between the areas with and without the metal coverage. Due to this, MacEtch has recently attracted much attention in extending this technique to III-V semiconductors such as GaAs, GaN, and InP. This thesis demonstrates uniform array-based InP nanostructures with lateral dimensions as small as sub-20 nm using inverse metal-assisted chemical etching (I-MacEtch), a purely solution-based yet anisotropic etching method. The type and geometry of the metal catalyst as well as etchant ratio and concentration are explored to achieve various InP nanostructure features. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures can potentially enable an aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2014-04-30T14:32:27Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 3 Kim_Seung Hyun.docx: 3398712 bytes, checksum: f79826f31ee321f8c4983b829ec9de54 (MD5) Kim_Seung Hyun.pdf: 4546554 bytes, checksum: 32636a8ba54adcae3ed123434bffe692 (MD5) Kim_Seung Hyun.pdf: 4547425 bytes, checksum: e547a0304a536351ae0e639c3dd7ac54 (MD5)","Made available in DSpace on 2014-05-30T17:03:06Z (GMT). No. of bitstreams: 3 Seung Hyun_Kim.pdf: 4546631 bytes, checksum: ff0b317b07270e1d31e3da6c64e4dcf8 (MD5) Kim_Seung Hyun.docx: 3403687 bytes, checksum: 498f52b453e0a2cc86c68429b45f80fe (MD5) license.txt: 4062 bytes, checksum: 2513cbbbe4bf678c3d5ae12014b6992f (MD5)","Restriction data tranferred 2014-07-01T11:38:11-05:00 Original Data Group with Access UIUC Users [automated] Release Date: 2016-05-30 12:09:03 UTC Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Seth Robbins (robbins.sd@gmail.com) on 2014-05-30T17:09:17Z Item is restricted until 2016-05-30T17:09:03Z","U of I Only Restriction Lifted for Item 49704 on 2016-09-22T20:59:19Z."]},{"key":"dc:title","label":"Title","values":["Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability"]}]}],"canonical_facts":{"dc:contributor":["Li, Xiuling"],"dc:creator":["Kim, Seung Hyun"],"dc:date":["2014-05-30T17:03:06Z","2016-09-22T20:59:19Z","2014-05"],"dc:description":["Metal-assisted chemical etching (MacEtch), a wet etching method developed in 2000, has been the focus of extensive research in the area of semiconductor nanotechnology for the last decade, mainly in Si. In principle, MacEtch can be applicable to the other semiconductors if there exists a significant etch rate difference between the areas with and without the metal coverage. Due to this, MacEtch has recently attracted much attention in extending this technique to III-V semiconductors such as GaAs, GaN, and InP. This thesis demonstrates uniform array-based InP nanostructures with lateral dimensions as small as sub-20 nm using inverse metal-assisted chemical etching (I-MacEtch), a purely solution-based yet anisotropic etching method. The type and geometry of the metal catalyst as well as etchant ratio and concentration are explored to achieve various InP nanostructure features. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures can potentially enable an aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2014-04-30T14:32:27Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 3 Kim_Seung Hyun.docx: 3398712 bytes, checksum: f79826f31ee321f8c4983b829ec9de54 (MD5) Kim_Seung Hyun.pdf: 4546554 bytes, checksum: 32636a8ba54adcae3ed123434bffe692 (MD5) Kim_Seung Hyun.pdf: 4547425 bytes, checksum: e547a0304a536351ae0e639c3dd7ac54 (MD5)","Made available in DSpace on 2014-05-30T17:03:06Z (GMT). No. of bitstreams: 3 Seung Hyun_Kim.pdf: 4546631 bytes, checksum: ff0b317b07270e1d31e3da6c64e4dcf8 (MD5) Kim_Seung Hyun.docx: 3403687 bytes, checksum: 498f52b453e0a2cc86c68429b45f80fe (MD5) license.txt: 4062 bytes, checksum: 2513cbbbe4bf678c3d5ae12014b6992f (MD5)","Restriction data tranferred 2014-07-01T11:38:11-05:00 Original Data Group with Access UIUC Users [automated] Release Date: 2016-05-30 12:09:03 UTC Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Seth Robbins (robbins.sd@gmail.com) on 2014-05-30T17:09:17Z Item is restricted until 2016-05-30T17:09:03Z","U of I Only Restriction Lifted for Item 49704 on 2016-09-22T20:59:19Z."],"dc:identifier":["http://hdl.handle.net/2142/49653"],"dc:language":["en"],"dc:rights":["Copyright 2014 Seung Hyun Kim"],"dc:subject":["Indium Phosphide (InP)","metal-assisted chemical etching (MacEtch)","nanowires","nanostructures"],"dc:title":["Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:38Z"}