{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/49650"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/49650","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Development of vertical cavity transistor laser and microcavity laser","abstract":"An energy-efficient semiconductor laser is of great interest for the massive data transmission demands in butt computing servers and supercomputing technologies. Currently, commercial vertical-cavity surface-emitting diode lasers (VCSELs) have achieved a data transmission rate of 25 Gbit/s per channel. However, the VCSEL bandwidth is limited by the slow recombination lifetime in the active region, which is the major challenge to transmitting at a data rate greater than 60 Gbit/s for a single VCSEL. To push the modulation speed, Purcell enhancement in the small volume and high Q cavity can be applied in microcavity VCSELs, enhancing the spontaneous recombination rate. In the first part of the dissertation we demonstrate that the microcavity VCSEL has a reduced recombination rate of 0.5 ns when the aperture size is less than 3 μm. With improved RF layout design and fabrication, we demonstrate a microcavity laser operating error-free at 40 Gbit/s. In the second part of the dissertation, we demonstrate the first vertical cavity transistor laser (VCTL) operation. Due to the dynamic charge transport in the active region, the transistor laser can achieve shorter carrier lifetime (~ 29 ps), making it especially suitable for high-speed lasers. We discuss the VCTL material and layout design, including how to reduce the parasitics via layout and process development. With three design iterations, we achieve a highly efficient VCTL.","abstract_html":"An energy-efficient semiconductor laser is of great interest for the massive data transmission demands in butt computing servers and supercomputing technologies. Currently, commercial vertical-cavity surface-emitting diode lasers (VCSELs) have achieved a data transmission rate of 25 Gbit/s per channel. However, the VCSEL bandwidth is limited by the slow recombination lifetime in the active region, which is the major challenge to transmitting at a data rate greater than 60 Gbit/s for a single VCSEL. To push the modulation speed, Purcell enhancement in the small volume and high Q cavity can be applied in microcavity VCSELs, enhancing the spontaneous recombination rate. In the first part of the dissertation we demonstrate that the microcavity VCSEL has a reduced recombination rate of 0.5 ns when the aperture size is less than 3 μm. With improved RF layout design and fabrication, we demonstrate a microcavity laser operating error-free at 40 Gbit/s. In the second part of the dissertation, we demonstrate the first vertical cavity transistor laser (VCTL) operation. Due to the dynamic charge transport in the active region, the transistor laser can achieve shorter carrier lifetime (~ 29 ps), making it especially suitable for high-speed lasers. We discuss the VCTL material and layout design, including how to reduce the parasitics via layout and process development. With three design iterations, we achieve a highly efficient VCTL.","abstract_has_math":false,"creators":["Wu, Mong-Kai"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Feng, Milton","Schutt-Ainé, José E.","Dallesasse, John M.","Goddard, Lynford L."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-05-30T17:02:56Z","date_published":"2014-05-30T17:02:56Z","updated_at":"2026-07-22T22:25:38Z","subjects":["vertical cavity transistor laser","microcavity laser","surface-emitting vertical-cavity lasers","energy efficient"],"languages":["en"],"rights":["Copyright 2014 Mong-Kai Wu"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/49650","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton","Schutt-Ainé, José E.","Dallesasse, John M.","Goddard, Lynford L."]},{"key":"dc:creator","label":"Author","values":["Wu, Mong-Kai"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-05-30T17:02:56Z","2016-09-22T20:59:19Z","2014-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["vertical cavity transistor laser","microcavity laser","surface-emitting vertical-cavity lasers","energy efficient"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2014 Mong-Kai Wu"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/49650"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["An energy-efficient semiconductor laser is of great interest for the massive data transmission demands in butt computing servers and supercomputing technologies. Currently, commercial vertical-cavity surface-emitting diode lasers (VCSELs) have achieved a data transmission rate of 25 Gbit/s per channel. However, the VCSEL bandwidth is limited by the slow recombination lifetime in the active region, which is the major challenge to transmitting at a data rate greater than 60 Gbit/s for a single VCSEL. To push the modulation speed, Purcell enhancement in the small volume and high Q cavity can be applied in microcavity VCSELs, enhancing the spontaneous recombination rate. In the first part of the dissertation we demonstrate that the microcavity VCSEL has a reduced recombination rate of 0.5 ns when the aperture size is less than 3 μm. With improved RF layout design and fabrication, we demonstrate a microcavity laser operating error-free at 40 Gbit/s. In the second part of the dissertation, we demonstrate the first vertical cavity transistor laser (VCTL) operation. Due to the dynamic charge transport in the active region, the transistor laser can achieve shorter carrier lifetime (~ 29 ps), making it especially suitable for high-speed lasers. We discuss the VCTL material and layout design, including how to reduce the parasitics via layout and process development. With three design iterations, we achieve a highly efficient VCTL.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2013-12-09T20:12:35Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Wu_Mong-Kai.pdf: 4065131 bytes, checksum: cc10271c318fc91d6eef9df3091bf75d (MD5)","Made available in DSpace on 2014-05-30T17:02:56Z (GMT). No. of bitstreams: 2 Mong-Kai_Wu.pdf: 4065131 bytes, checksum: cc10271c318fc91d6eef9df3091bf75d (MD5) license.txt: 4057 bytes, checksum: 57d959b6ecd4403707410d43a8c05221 (MD5)","Restriction data tranferred 2014-07-01T11:38:10-05:00 Original Data Group with Access UIUC Users [automated] Release Date: 2016-05-30 12:09:03 UTC Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Seth Robbins (robbins.sd@gmail.com) on 2014-05-30T17:09:13Z Item is restricted until 2016-05-30T17:09:03Z","U of I Only Restriction Lifted for Item 49701 on 2016-09-22T20:59:19Z."]},{"key":"dc:title","label":"Title","values":["Development of vertical cavity transistor laser and microcavity laser"]}]}],"canonical_facts":{"dc:contributor":["Feng, Milton","Schutt-Ainé, José E.","Dallesasse, John M.","Goddard, Lynford L."],"dc:creator":["Wu, Mong-Kai"],"dc:date":["2014-05-30T17:02:56Z","2016-09-22T20:59:19Z","2014-05"],"dc:description":["An energy-efficient semiconductor laser is of great interest for the massive data transmission demands in butt computing servers and supercomputing technologies. Currently, commercial vertical-cavity surface-emitting diode lasers (VCSELs) have achieved a data transmission rate of 25 Gbit/s per channel. However, the VCSEL bandwidth is limited by the slow recombination lifetime in the active region, which is the major challenge to transmitting at a data rate greater than 60 Gbit/s for a single VCSEL. To push the modulation speed, Purcell enhancement in the small volume and high Q cavity can be applied in microcavity VCSELs, enhancing the spontaneous recombination rate. In the first part of the dissertation we demonstrate that the microcavity VCSEL has a reduced recombination rate of 0.5 ns when the aperture size is less than 3 μm. With improved RF layout design and fabrication, we demonstrate a microcavity laser operating error-free at 40 Gbit/s. In the second part of the dissertation, we demonstrate the first vertical cavity transistor laser (VCTL) operation. Due to the dynamic charge transport in the active region, the transistor laser can achieve shorter carrier lifetime (~ 29 ps), making it especially suitable for high-speed lasers. We discuss the VCTL material and layout design, including how to reduce the parasitics via layout and process development. With three design iterations, we achieve a highly efficient VCTL.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2013-12-09T20:12:35Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Wu_Mong-Kai.pdf: 4065131 bytes, checksum: cc10271c318fc91d6eef9df3091bf75d (MD5)","Made available in DSpace on 2014-05-30T17:02:56Z (GMT). No. of bitstreams: 2 Mong-Kai_Wu.pdf: 4065131 bytes, checksum: cc10271c318fc91d6eef9df3091bf75d (MD5) license.txt: 4057 bytes, checksum: 57d959b6ecd4403707410d43a8c05221 (MD5)","Restriction data tranferred 2014-07-01T11:38:10-05:00 Original Data Group with Access UIUC Users [automated] Release Date: 2016-05-30 12:09:03 UTC Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Seth Robbins (robbins.sd@gmail.com) on 2014-05-30T17:09:13Z Item is restricted until 2016-05-30T17:09:03Z","U of I Only Restriction Lifted for Item 49701 on 2016-09-22T20:59:19Z."],"dc:identifier":["http://hdl.handle.net/2142/49650"],"dc:language":["en"],"dc:rights":["Copyright 2014 Mong-Kai Wu"],"dc:subject":["vertical cavity transistor laser","microcavity laser","surface-emitting vertical-cavity lasers","energy efficient"],"dc:title":["Development of vertical cavity transistor laser and microcavity laser"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:38Z"}