{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/49465"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/49465","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Optical loss and high-speed modulation of vertical-cavity surface-emitting lasers","abstract":"Vertical-cavity surface-emitting lasers (VCSELs) are microcavity semiconductor lasers used extensively as the light source of short-haul optical data communication and optical interconnects. By increasing the efficiency and modulation speed of these devices, it will be possible to continue to meet a globally increasing demand for bandwidth. After a fundamental discussion of VCSEL design and operation, this thesis focuses on how to improve these microcavity lasers for this type of use. From the collection of light-current-voltage data from lasers with a range of cavity diameters, the effects of varying the impurity doping concentration in the distributed Bragg reflector (DBR) mirrors of the VCSEL on its maximum power, current threshold, and slope efficiency are examined. By optimizing the amount of impurity doping distributed in the mirrors, improved performance of VCSEL can be developed. The small signal modulation theory for semiconductor lasers is also considered. The appropriate equations are derived. Static DC characterizations are conducted on high-speed photonic crystal VCSELs as a next step for determining the characteristics indicative of improved modulation bandwidth.","abstract_html":"Vertical-cavity surface-emitting lasers (VCSELs) are microcavity semiconductor lasers used extensively as the light source of short-haul optical data communication and optical interconnects. By increasing the efficiency and modulation speed of these devices, it will be possible to continue to meet a globally increasing demand for bandwidth. After a fundamental discussion of VCSEL design and operation, this thesis focuses on how to improve these microcavity lasers for this type of use. From the collection of light-current-voltage data from lasers with a range of cavity diameters, the effects of varying the impurity doping concentration in the distributed Bragg reflector (DBR) mirrors of the VCSEL on its maximum power, current threshold, and slope efficiency are examined. By optimizing the amount of impurity doping distributed in the mirrors, improved performance of VCSEL can be developed. The small signal modulation theory for semiconductor lasers is also considered. The appropriate equations are derived. Static DC characterizations are conducted on high-speed photonic crystal VCSELs as a next step for determining the characteristics indicative of improved modulation bandwidth.","abstract_has_math":false,"creators":["Blane, Janice"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Choquette, Kent D."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-05-30T16:45:41Z","date_published":"2014-05-30T16:45:41Z","updated_at":"2026-07-22T22:25:38Z","subjects":["optical loss","high-speed","modulation","vertical-cavity surface-emitting laser (VCSEL)","doping concentration","small signal"],"languages":["en"],"rights":["Copyright 2014 Janice Blane"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/49465","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Choquette, Kent D."]},{"key":"dc:creator","label":"Author","values":["Blane, Janice"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-05-30T16:45:41Z","2014-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["optical loss","high-speed","modulation","vertical-cavity surface-emitting laser (VCSEL)","doping concentration","small signal"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2014 Janice Blane"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/49465"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Vertical-cavity surface-emitting lasers (VCSELs) are microcavity semiconductor lasers used extensively as the light source of short-haul optical data communication and optical interconnects. 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