{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/45512"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/45512","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Novel designs, materials and techniques in plasma bipolar junction transistor (PBJT) fabrication and testing","abstract":"Improvements in the fabrication and testing of PBJTs by making adjustments that seek to enhance yield and PBJT operation have been performed. Results were observed to be consistent with those previously obtained by other techniques. The collector plasma generated was analyzed using a Princeton Instruments PI-MAX 3 intensified charge-coupled device (ICCD) camera. As a further improvement on the PBJT design, fabrication using a novel laterally-doped configuration is underway and initial work in making this device has been illustrated. 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