{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/34458"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/34458","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Performance and analysis of the plasma bipolar junction transistor: Control of the surface electrical properties","abstract":"A new configuration of plasma bipolar junction transistor (PBJT) based on an epitaxial wafer has been designed and fabricated. Its electrical properties and the collector plasma densities are characterized using electrical and optical methods. Using this device as a platform, coupling of the electron-ion plasma (gas phase plasma) and the electron-hole plasma (semiconductor) in terms of secondary electron ejection into the gas phase was investigated experimentally and theoretically. Ion-assisted electronic reactions occur at the plasma/semiconductor interface and their overall contribution to regulating the coupling effect was formulated and evaluated. This work demonstrated that the electrical properties of a semiconductor surface can be controlled via means of a pn junction, whether interfaced with another solid state (to form a bipolar junction transistor) or a gas (to form a plasma bipolar junction transistor). This control ability is manifest in the resultant transistor domain as variable current small signal gain. The plasma and semiconductor interface can be further engineered to alter the electrical properties and thus change the resultant transistor behavior. A PBJT with a black silicon interface was designed and characterized. The application of the black silicon PBJT as a burst mode digital transistor was demonstrated experimentally.","abstract_html":"A new configuration of plasma bipolar junction transistor (PBJT) based on an epitaxial wafer has been designed and fabricated. Its electrical properties and the collector plasma densities are characterized using electrical and optical methods. Using this device as a platform, coupling of the electron-ion plasma (gas phase plasma) and the electron-hole plasma (semiconductor) in terms of secondary electron ejection into the gas phase was investigated experimentally and theoretically. Ion-assisted electronic reactions occur at the plasma/semiconductor interface and their overall contribution to regulating the coupling effect was formulated and evaluated. This work demonstrated that the electrical properties of a semiconductor surface can be controlled via means of a pn junction, whether interfaced with another solid state (to form a bipolar junction transistor) or a gas (to form a plasma bipolar junction transistor). This control ability is manifest in the resultant transistor domain as variable current small signal gain. The plasma and semiconductor interface can be further engineered to alter the electrical properties and thus change the resultant transistor behavior. A PBJT with a black silicon interface was designed and characterized. The application of the black silicon PBJT as a burst mode digital transistor was demonstrated experimentally.","abstract_has_math":false,"creators":["Li, Benben"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Eden, James G.","Coleman, James J.","Carney, Paul S.","Cunningham, Brian T.","Ruzic, David N."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-09-18T21:18:11Z","date_published":"2012-09-18T21:18:11Z","updated_at":"2026-07-22T22:25:31Z","subjects":["plasma bipolar junction transistor","microplasma","plasma transistor","plasma/semiconductor interface"],"languages":["en"],"rights":["Copyright 2012 Benben Li"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/34458","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Eden, James G.","Coleman, James J.","Carney, Paul S.","Cunningham, Brian T.","Ruzic, David N."]},{"key":"dc:creator","label":"Author","values":["Li, Benben"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2012-09-18T21:18:11Z","2014-09-18T10:00:47Z","2012-08"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["plasma bipolar junction transistor","microplasma","plasma transistor","plasma/semiconductor interface"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2012 Benben Li"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/34458"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["A new configuration of plasma bipolar junction transistor (PBJT) based on an epitaxial wafer has been designed and fabricated. Its electrical properties and the collector plasma densities are characterized using electrical and optical methods. Using this device as a platform, coupling of the electron-ion plasma (gas phase plasma) and the electron-hole plasma (semiconductor) in terms of secondary electron ejection into the gas phase was investigated experimentally and theoretically. Ion-assisted electronic reactions occur at the plasma/semiconductor interface and their overall contribution to regulating the coupling effect was formulated and evaluated. This work demonstrated that the electrical properties of a semiconductor surface can be controlled via means of a pn junction, whether interfaced with another solid state (to form a bipolar junction transistor) or a gas (to form a plasma bipolar junction transistor). This control ability is manifest in the resultant transistor domain as variable current small signal gain. The plasma and semiconductor interface can be further engineered to alter the electrical properties and thus change the resultant transistor behavior. A PBJT with a black silicon interface was designed and characterized. The application of the black silicon PBJT as a burst mode digital transistor was demonstrated experimentally.","Item withdrawn by Alexis Thompson (athmpsn1@illinois.edu) on 2012-07-09T18:17:39Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Li_Benben.pdf: 11653774 bytes, checksum: 862ddf52086b8a365f3e3c3975f20714 (MD5)","Made available in DSpace on 2012-09-18T21:18:11Z (GMT). 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Its electrical properties and the collector plasma densities are characterized using electrical and optical methods. Using this device as a platform, coupling of the electron-ion plasma (gas phase plasma) and the electron-hole plasma (semiconductor) in terms of secondary electron ejection into the gas phase was investigated experimentally and theoretically. Ion-assisted electronic reactions occur at the plasma/semiconductor interface and their overall contribution to regulating the coupling effect was formulated and evaluated. This work demonstrated that the electrical properties of a semiconductor surface can be controlled via means of a pn junction, whether interfaced with another solid state (to form a bipolar junction transistor) or a gas (to form a plasma bipolar junction transistor). This control ability is manifest in the resultant transistor domain as variable current small signal gain. The plasma and semiconductor interface can be further engineered to alter the electrical properties and thus change the resultant transistor behavior. A PBJT with a black silicon interface was designed and characterized. The application of the black silicon PBJT as a burst mode digital transistor was demonstrated experimentally.","Item withdrawn by Alexis Thompson (athmpsn1@illinois.edu) on 2012-07-09T18:17:39Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Li_Benben.pdf: 11653774 bytes, checksum: 862ddf52086b8a365f3e3c3975f20714 (MD5)","Made available in DSpace on 2012-09-18T21:18:11Z (GMT). No. of bitstreams: 2 Li_Benben.pdf: 11653774 bytes, checksum: 862ddf52086b8a365f3e3c3975f20714 (MD5) license.txt: 4055 bytes, checksum: eddd249513ce5b2a8c87ad99c7bab578 (MD5)","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Seth Robbins (srobbins@illinois.edu) on 2012-09-18T21:21:07Z Item is restricted until 2014-09-18T21:21:01Z","Restriction data tranferred 2014-07-01T11:35:02-05:00 Original Data Group with Access UIUC Users [automated] Release Date: 2014-09-18 16:21:01 UTC Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only Restriction Lifted for Item 34732 on 2014-09-18T10:00:47Z."],"dc:identifier":["http://hdl.handle.net/2142/34458"],"dc:language":["en"],"dc:rights":["Copyright 2012 Benben Li"],"dc:subject":["plasma bipolar junction transistor","microplasma","plasma transistor","plasma/semiconductor interface"],"dc:title":["Performance and analysis of the plasma bipolar junction transistor: Control of the surface electrical properties"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:31Z"}