{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/31211"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/31211","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Pseudospin transfer torques and the effect of disorder in semiconductor electron bilayers","abstract":"We use self-consistent quantum transport theory to investigate the influence of electron-electron interactions on interlayer transport in semiconductor electron bilayers in the absence of an external magnetic fi eld. We conclude that, even though spontaneous pseudospin order does not occur at zero field, interaction-enhanced quasiparticle tunneling amplitudes and pseudospin transfer torques do alter tunneling I-V characteristics, and can lead to time-dependent response to a dc bias voltage. In addition, we study the eff ects of disorder on the interlayer transport properties of disordered semiconductor bilayers. We find that the addition of material disorder to the system affects interlayer interactions leading to signifi cant deviations in the interlayer transfer characteristics. In particular, we find that disorder decreases and broadens the tunneling peak, eff ectively reducing the interacting system to a non-interacting system. Our results suggest that the experimental observation of interaction-enhanced interlayer transport in semiconductor bilayers requires materials with mean-free paths larger than the spatial extent of the system.","abstract_html":"We use self-consistent quantum transport theory to investigate the influence of electron-electron interactions on interlayer transport in semiconductor electron bilayers in the absence of an external magnetic fi eld. We conclude that, even though spontaneous pseudospin order does not occur at zero field, interaction-enhanced quasiparticle tunneling amplitudes and pseudospin transfer torques do alter tunneling I-V characteristics, and can lead to time-dependent response to a dc bias voltage. In addition, we study the eff ects of disorder on the interlayer transport properties of disordered semiconductor bilayers. We find that the addition of material disorder to the system affects interlayer interactions leading to signifi cant deviations in the interlayer transfer characteristics. In particular, we find that disorder decreases and broadens the tunneling peak, eff ectively reducing the interacting system to a non-interacting system. Our results suggest that the experimental observation of interaction-enhanced interlayer transport in semiconductor bilayers requires materials with mean-free paths larger than the spatial extent of the system.","abstract_has_math":false,"creators":["Kim, Youngseok"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Gilbert, Matthew J."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-05-22T00:35:53Z","date_published":"2012-05-22T00:35:53Z","updated_at":"2026-07-22T22:25:30Z","subjects":["Pseudospin ferromagnetism","semiconductor bilayer"],"languages":["en"],"rights":["Copyright 2012 Youngseok Kim"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/31211","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Gilbert, Matthew J."]},{"key":"dc:creator","label":"Author","values":["Kim, Youngseok"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2012-05-22T00:35:53Z","2012-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Pseudospin ferromagnetism","semiconductor bilayer"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2012 Youngseok Kim"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/31211"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["We use self-consistent quantum transport theory to investigate the influence of electron-electron interactions on interlayer transport in semiconductor electron bilayers in the absence of an external magnetic fi eld. We conclude that, even though spontaneous pseudospin order does not occur at zero field, interaction-enhanced quasiparticle tunneling amplitudes and pseudospin transfer torques do alter tunneling I-V characteristics, and can lead to time-dependent response to a dc bias voltage. In addition, we study the eff ects of disorder on the interlayer transport properties of disordered semiconductor bilayers. We find that the addition of material disorder to the system affects interlayer interactions leading to signifi cant deviations in the interlayer transfer characteristics. In particular, we find that disorder decreases and broadens the tunneling peak, eff ectively reducing the interacting system to a non-interacting system. Our results suggest that the experimental observation of interaction-enhanced interlayer transport in semiconductor bilayers requires materials with mean-free paths larger than the spatial extent of the system.","Item withdrawn by Rebecca Bryant (rabryant@illinois.edu) on 2012-04-18T19:25:40Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Kim_Youngseok.pdf: 4168784 bytes, checksum: 0094f9b346e167d48f60e602bf74cba3 (MD5)","Made available in DSpace on 2012-05-22T00:35:53Z (GMT). No. of bitstreams: 2 Kim_Youngseok.pdf: 4168784 bytes, checksum: 0094f9b346e167d48f60e602bf74cba3 (MD5) license.txt: 4061 bytes, checksum: 869ff2178db318f20d117a15a63db982 (MD5)"]},{"key":"dc:title","label":"Title","values":["Pseudospin transfer torques and the effect of disorder in semiconductor electron bilayers"]}]}],"canonical_facts":{"dc:contributor":["Gilbert, Matthew J."],"dc:creator":["Kim, Youngseok"],"dc:date":["2012-05-22T00:35:53Z","2012-05"],"dc:description":["We use self-consistent quantum transport theory to investigate the influence of electron-electron interactions on interlayer transport in semiconductor electron bilayers in the absence of an external magnetic fi eld. We conclude that, even though spontaneous pseudospin order does not occur at zero field, interaction-enhanced quasiparticle tunneling amplitudes and pseudospin transfer torques do alter tunneling I-V characteristics, and can lead to time-dependent response to a dc bias voltage. In addition, we study the eff ects of disorder on the interlayer transport properties of disordered semiconductor bilayers. We find that the addition of material disorder to the system affects interlayer interactions leading to signifi cant deviations in the interlayer transfer characteristics. In particular, we find that disorder decreases and broadens the tunneling peak, eff ectively reducing the interacting system to a non-interacting system. Our results suggest that the experimental observation of interaction-enhanced interlayer transport in semiconductor bilayers requires materials with mean-free paths larger than the spatial extent of the system.","Item withdrawn by Rebecca Bryant (rabryant@illinois.edu) on 2012-04-18T19:25:40Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Kim_Youngseok.pdf: 4168784 bytes, checksum: 0094f9b346e167d48f60e602bf74cba3 (MD5)","Made available in DSpace on 2012-05-22T00:35:53Z (GMT). No. of bitstreams: 2 Kim_Youngseok.pdf: 4168784 bytes, checksum: 0094f9b346e167d48f60e602bf74cba3 (MD5) license.txt: 4061 bytes, checksum: 869ff2178db318f20d117a15a63db982 (MD5)"],"dc:identifier":["http://hdl.handle.net/2142/31211"],"dc:language":["en"],"dc:rights":["Copyright 2012 Youngseok Kim"],"dc:subject":["Pseudospin ferromagnetism","semiconductor bilayer"],"dc:title":["Pseudospin transfer torques and the effect of disorder in semiconductor electron bilayers"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:30Z"}