{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/30836"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/30836","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Connecting small-angle diffraction with real-space images by quantitative TEM of amorphous thin-films","abstract":"\"Amorphous solids are a technologically important class of materials whose structure is not yet well-described. High resolution structural probes such as neutron or x-ray scattering give limited information, restricted mainly to near-neighbor bond lengths and bond angles, but these probes become less useful when trying to examine structure on \"\"medium\"\" length scales, roughly 1 nm in size. Small-angle scattering is used to study structure on this scale, but data analysis is limited by free parameters and the need to probe a macroscopic sample volume. Until now, progress using transmission electron microscopy (TEM) has been limited by instrumental difficulties, but recent technological advances have made quantitative TEM studies of amorphous solids possible. We have used TEM to examine microscopic areas of ultrathin SiO2 layers, directly correlating small-angle scattering with real-space images. Our studies have allowed us to pinpoint medium range structures which gives rise to small angle scattering, and we have gained insight into structural questions regarding both native oxides and ultrathin gate oxides used in microelectronic devices.\"","abstract_html":""Amorphous solids are a technologically important class of materials whose structure is not yet well-described. High resolution structural probes such as neutron or x-ray scattering give limited information, restricted mainly to near-neighbor bond lengths and bond angles, but these probes become less useful when trying to examine structure on ""medium"" length scales, roughly 1 nm in size. Small-angle scattering is used to study structure on this scale, but data analysis is limited by free parameters and the need to probe a macroscopic sample volume. Until now, progress using transmission electron microscopy (TEM) has been limited by instrumental difficulties, but recent technological advances have made quantitative TEM studies of amorphous solids possible. We have used TEM to examine microscopic areas of ultrathin SiO2 layers, directly correlating small-angle scattering with real-space images. Our studies have allowed us to pinpoint medium range structures which gives rise to small angle scattering, and we have gained insight into structural questions regarding both native oxides and ultrathin gate oxides used in microelectronic devices."","abstract_has_math":false,"creators":["Miller, Peter David"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Gibson, J. Murray"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-05-10T20:51:11Z","date_published":"2012-05-10T20:51:11Z","updated_at":"2026-07-22T22:25:29Z","subjects":["amorphous solids","TEM"],"languages":["en"],"rights":["©1998 Peter David Miller"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["4120447"],"render_values":[{"text":"4120447","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/30836","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Gibson, J. 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High resolution structural probes such as neutron or x-ray scattering give limited information, restricted mainly to near-neighbor bond lengths and bond angles, but these probes become less useful when trying to examine structure on \"\"medium\"\" length scales, roughly 1 nm in size. Small-angle scattering is used to study structure on this scale, but data analysis is limited by free parameters and the need to probe a macroscopic sample volume. Until now, progress using transmission electron microscopy (TEM) has been limited by instrumental difficulties, but recent technological advances have made quantitative TEM studies of amorphous solids possible. We have used TEM to examine microscopic areas of ultrathin SiO2 layers, directly correlating small-angle scattering with real-space images. Our studies have allowed us to pinpoint medium range structures which gives rise to small angle scattering, and we have gained insight into structural questions regarding both native oxides and ultrathin gate oxides used in microelectronic devices.\"","Submitted by Megan Hayes (mohayes2@illinois.edu) on 2012-05-10T20:51:11Z No. of bitstreams: 1 1998_miller.pdf: 3444905 bytes, checksum: 889dcbfd8122541cda3bf7b35fd8d6b9 (MD5)","Made available in DSpace on 2012-05-10T20:51:11Z (GMT). No. of bitstreams: 1 1998_miller.pdf: 3444905 bytes, checksum: 889dcbfd8122541cda3bf7b35fd8d6b9 (MD5) Previous issue date: 1998","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Megan Hayes (mohayes2@illinois.edu) on 2012-05-10T20:51:11Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:33:25-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: thesis","thesis","U of I Only"]},{"key":"dc:title","label":"Title","values":["Connecting small-angle diffraction with real-space images by quantitative TEM of amorphous thin-films"]}]}],"canonical_facts":{"dc:contributor":["Gibson, J. Murray"],"dc:creator":["Miller, Peter David"],"dc:date":["2012-05-10T20:51:11Z","10000-01-01","1998"],"dc:description":["\"Amorphous solids are a technologically important class of materials whose structure is not yet well-described. High resolution structural probes such as neutron or x-ray scattering give limited information, restricted mainly to near-neighbor bond lengths and bond angles, but these probes become less useful when trying to examine structure on \"\"medium\"\" length scales, roughly 1 nm in size. Small-angle scattering is used to study structure on this scale, but data analysis is limited by free parameters and the need to probe a macroscopic sample volume. Until now, progress using transmission electron microscopy (TEM) has been limited by instrumental difficulties, but recent technological advances have made quantitative TEM studies of amorphous solids possible. We have used TEM to examine microscopic areas of ultrathin SiO2 layers, directly correlating small-angle scattering with real-space images. Our studies have allowed us to pinpoint medium range structures which gives rise to small angle scattering, and we have gained insight into structural questions regarding both native oxides and ultrathin gate oxides used in microelectronic devices.\"","Submitted by Megan Hayes (mohayes2@illinois.edu) on 2012-05-10T20:51:11Z No. of bitstreams: 1 1998_miller.pdf: 3444905 bytes, checksum: 889dcbfd8122541cda3bf7b35fd8d6b9 (MD5)","Made available in DSpace on 2012-05-10T20:51:11Z (GMT). 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